VISHAY FEP16GT-E3

FEP(F,B)16AT thru FEP(F,B)16JT
Vishay General Semiconductor
Dual Common-Cathode Ultrafast Plastic Rectifier
TO-220AB
FEATURES
• Glass passivated chip junction
• Ultrafast recovery time
• Low switching losses, high efficiency
• High forward surge capability
• AEC-Q101 qualified
• Meets MSL level 1, per J-STD-020C, LF max peak
of 245 °C (for TO-263AB package)
• Solder Dip 260 °C, 40 seconds (for TO-220AB &
ITO-220AB package)
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
ITO-220AB
2
3
1
FEP16xT
PIN 1
PIN 2
PIN 3
CASE
2
1
3
FEPF16xT
PIN 1
PIN 2
PIN 3
TO-263AB
K
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power supplies, inverters, free-wheeling diodes,
dc-to-dc converters, and other power switching
application.
2
1
FEPB16xT
PIN 1
K
PIN 2
HEATSINK
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAJOR RATINGS AND CHARACTERISTICS
IF(AV)
8.0 A x 2
VRRM
50 V to 600 V
IFSM
200 A, 125 A
trr
35 ns, 50 ns
VF
0.95 V, 1.30 V, 1.50 V
Tj max.
150 °C
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
SYMBOL
FEP
16AT
FEP
16BT
FEP
16CT
FEP
16DT
FEP
16FT
FEP
16GT
FEP
16HT
FEP
16JT
UNIT
Maximum repetitive peak reverse voltage
VRRM
50
100
150
200
300
400
500
600
V
Maximum RMS voltage
PARAMETER
VRMS
35
70
105
140
210
280
350
420
V
Maximum DC blocking voltage
VDC
50
100
150
200
300
400
500
600
V
Maximum average forward
rectified current at TC = 100 °C
IF(AV)
Peak forward surge current 8.3 ms
single half sine-wave superimposed
on rated load per diode
IFSM
Operating storage and temperature range
Isolation voltage (ITO-220AB only)
From terminal to heatsink t = 1 minute
Document Number 88596
22-Aug-06
16
200
A
125
A
TJ, TSTG
- 55 to +150
°C
VAC
1500
V
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FEP(F,B)16AT thru FEP(F,B)16JT
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
Maximum instantaneous
forward voltage per diode (1)
at 8.0 A
Maximum DC reverse current
per diode at rated DC
blocking voltage
SYMBOL
FEP
16AT
FEP
16BT
VF
TC = 25 °C
TC = 100 °C
FEP
16CT
FEP
16DT
0.95
at IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
trr
Typical junction capacitance
per diode
at 4.0 V, 1 MHz
CJ
FEP
16GT
FEP
16HT
1.30
FEP
16JT
1.50
10
500
IR
Maximum reverse recovery
time per diode
FEP
16FT
UNIT
V
µA
35
50
ns
85
60
pF
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
FEP
FEPF
FEPB
UNIT
RθJC
2.2
3.1
2.2
°C/W
Typical thermal resistance from junction to case per diode
ORDERING INFORMATION
PACKAGE
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-220AB
FEP16JT-E3/45
1.85
45
50/Tube
Tube
ITO-220AB
FEPF16JT-E3/45
1.97
45
50/Tube
Tube
TO-263AB
FEPB16JT-E3/45
1.35
45
50/Tube
Tube
TO-263AB
FEPB16JT-E3/81
1.35
81
800/Reel
Tape Reel
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PREFERRED P/N
Document Number 88596
22-Aug-06
FEP(F,B)16AT thru FEP(F,B)16JT
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
100
20
Instantaneous Reverse Leakage
Current (µA)
Average Forward Current (A)
Resistive or Inductive Load
16
12
8
4
0
10
Tj = 100 °C
1
Tj = 25 °C
0.1
0.01
0
50
100
0
150
Case Temperature (°C)
20
40
80
60
100
Percent of Rated Peak Reverse Voltage (%)
Figure 1. Forward Current Derating Curve
Figure 4. Typical Reverse Characteristics Per Diode
300
1000
50 - 400 V
500 - 600 V
TC = 100 °C
8.3 ms Single Half Sine-Wave
250
Junction Capacitance (pF)
Peak Forward Surge Current (A)
Tj = 125 °C
50 - 400 V
500 - 600 V
200
150
100
50
0
Tj = 125 °C
f = 1.0 MHz
Vsig = 50 mVp-p
100
10
1
10
100
0.1
1
10
100
Reverse Voltage (V)
Number of Cycles at 60 Hz
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
Figure 5. Typical Junction Capacitance Per Diode
Instantaneous Forward Current (A)
40
Tj = 125 °C
10
Tj = 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
1
50 - 400 V
300 - 400 V
500 - 600 V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Document Number 88596
22-Aug-06
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FEP(F,B)16AT thru FEP(F,B)16JT
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
ITO-220AB
T O-220AB
0.404 (10.26)
0.384 (9.75)
0.415 (10.54) MAX.
0.370 (9.40)
0.360 (9.14)
0.055 (1.39)
0.045 (1.14)
0.113 (2.87)
0.103 (2.62)
1
PIN
2
0.160 (4.06)
0.140 (3.56)
0.105 (2.67)
0.095 (2.41)
0.104 (2.65)
0.096 (2.45)
1
2
0.080 (2.03)
0.065 (1.65)
0.560 (14.22)
0.530 (13.46)
0.035 (0.90)
0.028 (0.70)
7° Ref.
0.350 (8.89)
0.330 (8.38)
3
7° Ref.
0.057 (1.45)
0.045 (1.14)
0.110 (2.79)
0.100 (2.54)
0.035 (0.89)
0.025 (0.64)
0.025 (0.64)
0.015 (0.38)
0.105 (2.67)
0.095 (2.41)
0.022 (0.56)
0.014 (0.36)
0.135 (3.43) DIA.
0.122 (3.08) DIA.
0.191 (4.85)
0.171 (4.35)
0.560 (14.22)
0.530 (13.46)
0.110 (2.79)
0.100 (2.54)
0.205 (5.20)
0.195 (4.95)
0.671 (17.04)
0.651 (16.54)
PIN
0.603 (15.32)
0.573 (14.55)
1.148 (29.16)
1.118 (28.40)
0.057 (1.45)
0.045 (1.14)
7° Ref.
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.600 (15.24)
0.580 (14.73)
0.350 (8.89)
0.330 (8.38)
3
0.110 (2.79)
0.100 (2.54)
0.076Ref.
(1.93)Ref.
45° Ref.
0.145 (3.68)
0.135 (3.43)
0.635 (16.13)
0.625 (15.87)
0.190 (4.83)
0.170 (4.32)
See note
0.076 Ref.
(1.93) ref.
0.185 (4.70)
0.175 (4.44)
0.154 (3.91)
0.148 (3.74)
See note
0.205 (5.21)
0.195 (4.95)
0.028 (0.71)
0.020 (0.51)
Note: Copper exposure is allowablefor 0.005 (0.13) Max. from the body
TO-263AB
0.41
1 (10.45)
0.380 (9.65)
0.190 (4.83)
0.160 (4.06)
0.245 (6.22)
MIN
K
0.360 (9.14)
0.320 (8.13)
1
K
2
0.624 (15.85)
0.591(15.00)
0.055 (1.40)
0.045 (1.14)
0-0.01 (0-0.254)
0.105 (2.67)
0.095 (2.41)
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4
0.205 (5.20)
0.195 (4.95)
0.42
MIN.
(10.66)
0.33
(8.38) MIN.
0.055 (1.40)
0.047 (1.19)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.037 (0.940)
0.027 (0.686)
Mounting Pad Layout
0.140 (3.56)
0.110 (2.79)
0.670 (17.02)
0.591 (15.00)
0.15
(3.81) MIN.
0.08
MIN.
(2.032)
0.105 (2.67)
(0.095) (2.41)
Document Number 88596
22-Aug-06
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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