1N5614GP thru 1N5622GP Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier structure for high reliability application ® • Cavity-free glass-passivated junction • Low forward voltage drop d* e t n e Pat • Low leakage current, IR less than 0.1 µA • High forward surge capability • Meets environmental standard MIL-S-19500 DO-204AC (DO-15) * Glass-plastic encapsulation technique is covered by Patent No. 3,996,602, and brazed-lead assembly by Patent No. 3,930,306 • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in general purpose rectification of power supplies, inverters, converters and freewheeling diodes application. PRIMARY CHARACTERISTICS IF(AV) 1.0 A VRRM 200 V to 1000 V IFSM 50 A IR 0.5 µA VF 1.2 V TJ max. 175 °C MECHANICAL DATA Case: DO-204AC, molded epoxy over glass body Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test, HE3 suffix for high reliability grade (AEC Q101 qualified), meets JESD 201 class 2 whisker test Polarity: Color band denotes cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL 1N5614GP 1N5616GP 1N5618GP 1N5620GP 1N5622GP UNIT Maximum repetitive peak reverse voltage (1) VRRM 200 400 600 800 1000 V Maximum RMS voltage VRMS 140 280 420 560 700 V VDC 200 400 600 800 1000 V Maximum DC blocking voltage (1) Maximum average forward rectified current 0.375" (9.5 mm) lead length at TA = 55 °C IF(AV) 1.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load (1) IFSM 50 A TJ, TSTG - 65 to + 175 °C Operating junction and storage temperature range (1) Note: (1) JEDEC registered values Document Number: 88520 Revision: 03-Apr-08 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 1N5614GP thru 1N5622GP Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Minimum reverse breakdown voltage (1) 50 µA VBR Maximum instantaneous forward voltage (1) 1.0 A VF 1.2 V TA = 25 °C TA = 100 °C IR 0.5 25 µA Maximum reverse recovery time (1) IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 2.0 µs Maximum junction capacitance at 12 V, 1 MHz CJ Maximum DC reverse current at rated DC blocking voltage (1) SYMBOL 1N5614GP 1N5616GP 1N5618GP 1N5620GP 1N5622GP UNIT 220 440 45 660 35 880 25 20 1100 15 V pF Note: (1) JEDEC registered values THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL 1N5614GP 1N5616GP 1N5618GP 1N5620GP 1N5622GP UNIT Typical thermal resistance (1) RθJA 45 °C/W Note: (1) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, P.C.B. mounted ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE 1N5618GP-E3/54 0.425 54 4000 13" diameter paper tape and reel 1N5618GP-E3/73 0.425 73 2000 Ammo pack packaging 1N5618GPHE3/54 (1) 0.425 54 4000 13" diameter paper tape and reel 1N5618GPHE3/73 (1) 0.425 73 2000 Ammo pack packaging Note: (1) Automotive grade AEC Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 50 60 Hz Resistive or Inductive Load Peak Forward Surge Current (A) Average Forward Rectified Current (A) 1.00 0.75 0.50 0.25 0.375" (9.5 mm) Lead Length TJ = TJ Max. 8.3 ms Single Half Sine-Wave 40 30 20 10 0 0 25 50 75 100 125 150 175 1 10 100 Ambient Temperature (°C) Number of Cycles at 60 Hz Figure 1. Forward Current Derating Curve Figure 2. Maximum Non-repetitive Peak Forward Surge Current www.vishay.com 2 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 88520 Revision: 03-Apr-08 1N5614GP thru 1N5622GP Vishay General Semiconductor 100 TJ = 150 °C Junction Capacitance (pF) Instantaneous Forward Current (A) 10 1 TJ = 25 °C 0.1 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 10 Pulse Width = 300 µs 1 % Duty Cycle 0.01 0.4 1 0.6 0.8 1.0 1.2 1.4 1 1.6 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Figure 3. Typical Instantaneous Forward Characteristics Figure 5. Typical Junction Capacitance Instantaneous Reverse Current (µA) 10 TJ = 125 °C 1 TJ = 75 °C 0.1 TJ = 25 °C 0.01 0 20 40 60 80 100 Rated Peak Reverse Voltage (%) Figure 4. Typical Reverse Characteristics PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-204AC (DO-15) 0.034 (0.86) 0.028 (0.71) DIA. 1.0 (25.4) MIN. 0.300 (7.6) 0.230 (5.8) 0.140 (3.6) 0.104 (2.6) DIA. 1.0 (25.4) MIN. Document Number: 88520 Revision: 03-Apr-08 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1