FFPF10UP30ST tm 10 A, 300 V, Ultrafast Diode Features • Ultrafast Recovery trr = 45 ns (@ IF = 10 A) • Max Forward Voltage, VF = 1.4 V (@ TC = 25°C) The FFPF10UP30S is an ultrafast diode with low forward voltage drop and rugged UIS capability. This device is intended for use as freewheeling and clamping diodes in a variety of switching power supplies and other power switching applications. It is specially suited for use in switching power supplies and industrial applicationa as welder and UPS application. • Reverse Voltage, VRRM = 300 V • Avalanche Energy Rated • RoHS Compliant Applications • General Purpose • Switching Mode Power Supply • Free-Wheeling Diode for Motor Application • Power Switching Circuits 1 1. Cathode TO-220F 1 1. Cathode 2. Anode Absolute Maximum Ratings Symbol 2 2. Anode (per diode) Ta = 25°C unless otherwise noted Value Unit VRRM Peak Repetitive Reverse Voltage Parameter 300 V VRWM Working Peak Reverse Voltage 300 V VR DC Blocking Voltage 300 V IF(AV) Average Rectified Forward Current IFSM Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave TJ, TSTG Operating Junction and Storage Temperature Thermal Characteristics T a Symbol RθJC @ TC = 125°C Maximum Thermal Resistance, Junction to Case ©2005 Fairchild Semiconductor Corporation A A - 65 to +150 °C = 25°C unless otherwise noted Parameter FFPF10UP30ST Rev. A 10 100 1 Max Unit 4.0 °C/W www.fairchildsemi.com FFPF10UP30ST 10 A, 300 V, Ultrafast Diode September 2005 Symbol (per diode) Ta = 25°C unless otherwise noted Parameter Min. Typ. Max. Unit IF = 10 A IF = 10 A TC = 25 °C TC = 150 °C - - 1.4 1.2 V V VR = 300 V VR = 300 V TC = 25 °C TC = 150 °C - - 100 500 μA μA trr IF =1 A, di/dt = 100 A/μs, VCC = 30 V IF =10 A, di/dt = 200 A/μs, VCC = 195 V TC = 25 °C TC = 25 °C - - 35 45 ns ns ta tb Qrr IF =10 A, di/dt = 200 A/μs, VCC = 195 V TC = 25 °C TC = 25 °C TC = 25 °C - 11 13 20 - ns ns nC WAVL Avalanche Energy (L = 20 mH) 20 - - mJ VF * IR * *Pulse Test: Pulse Width=300 μs, Duty Cycle=2% ©2005 Fairchild Semiconductor Corporation FFPF10UP30ST Rev. A 2 www.fairchildsemi.com FFPF10UP30ST 10 A, 300 V, Ultrafast Diode Electrical Characteristics Figure 1. Typical Forward Voltage Drop Figure 2. Typical Reverse Current 10 20 Reverse Current , I R [μA] Forward Current , IF [A] 10 o TC = 100 C o TC = 25 C 1 0.1 0.0 0.5 1.0 1.5 1 o TC = 100 C 0.1 o TC = 25 C 0.01 0.001 2.0 0 50 Forward Voltage , VF [V] Figure 3. Typical Junction Capacitance Reverse Recovery Time , trr [ns] Capacitance , Cj [pF] 100 1 10 100 300 o Tc = 25 C 32 28 24 100 200 IF = 10A o TC = 25 C 4 3 2 1 200 300 400 500 di/dt [A/μs] ©2005 Fairchild Semiconductor Corporation 400 500 Figure 6. Forward Current Deration Curve Average Rectified Forward Current, IF(AV) [A] 5 300 di/dt [A/μs] Figure 5. Typical Reverse Recovery Current Reverse Recovery Current , Irr [A] 250 IF = 10A Reverse Voltage , VR [V] FFPF10UP30ST Rev. A 200 36 Typical Capacitance at 0V = 197. 2 pF 0 100 150 Figure 4. Typical Reverse Recovery Time 400 10 0.1 100 Reverse Voltage , VR [V] 3 14 12 10 8 DC 6 4 2 0 100 110 120 130 140 150 o Case Temperature, TC [ C] www.fairchildsemi.com FFPF10UP30ST 10 A, 300 V, Ultrafast Diode Typical Performance Characteristics FFPF10UP30ST 10 A, 300 V, Ultrafast Diode Package Demensions TO-220F 2L ø3.18 ±0.10 2.54 ±0.20 3.30 ±0.10 10.16 ±0.20 (6.50) MAX1.47 15.87 ±0.20 (1.80) (1.00x45°) 12.00 ±0.20 9.75 ±0.30 15.80 ±0.20 6.68 ±0.20 (0.70) 2.76 ±0.20 0.80 ±0.10 0.35 ±0.10 2.54TYP [2.54 ±0.20] 9.40 ±0.20 +0.10 0.50 –0.05 4.70 ±0.20 2.54TYP [2.54 ±0.20] Dimensions in Millimeters ©2005 Fairchild Semiconductor Corporation FFPF10UP30ST Rev. A 4 www.fairchildsemi.com FFPF10UP30ST 10 A, 300 V, Ultrafast Diode ©2005 Fairchild Semiconductor Corporation FFPF10UP30ST Rev. A 5 www.fairchildsemi.com