FUJI FGW50N60H

http://www.fujielectric.com/products/semiconductor/
FGW50N60H
Discrete IGBT
Discrete IGBT (High-Speed V series)
600V / 50A
Features
Low power loss
Low switching surge and noise
High reliability, high ruggedness (RBSOA, SCSOA etc.)
Applications
Uninterruptible power supply
Power coditionner
Power factor correction circuit
Equivalent circuit
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at TC =25°C unless otherwise specified)
Items
Collector-Emitter voltage
Gate-Emitter voltage
Pulsed Collector Current
Turn-Off Safe Operating Area
Symbols
VCES
VGES
IC@25
IC@100
ICP
-
Short Circuit Withstand Time
tSC
DC Collector Current
Maximum Power Dissipation
PD
Operating Junction Temperature Tj
Storage Temperature
Tstg
Characteristics Units
Remarks
600
V
±20
V
95
A
TC =25°C, Tj =150°C
50
A
TC =100°C, Tj =150°C
150
A
Note *1
150
A
VCE ≤600V, Tj ≤175°C
VCC ≤300V, VGE=12V
5
μs
Tj ≤150°C
360
W
TC =25°C
-40~+175
°C
-55~+175
°C
Collector
Gate
Emitter
Note *1 : Pulse width limited by Tjmax.
Electrical characteristics (at Tj = 25°C unless otherwise specified)
Items
Symbols
Conditions
Collector-Emitter Breakdown Voltage
V(BR)CES
IC = 250μA, VGE = 0V
Zero Gate Voltage Collector Current
ICES
VCE = 600V, VGE = 0V
Gate-Emitter Leakage Current
Gate-Emitter Threshold Voltage
IGES
VGE (th)
VCE = 0V, VGE = ±20V
VCE = +20V, IC = 50mA
Collector-Emitter Saturation Voltage
VCE (sat)
VGE = +15V, IC = 50A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Cies
Coes
Cres
Gate Charge
QG
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Energy
td(on)
tr
td(off)
tf
Eon
Turn-Off Energy
Eoff
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Energy
td(on)
tr
td(off)
tf
Eon
Turn-Off Energy
Eoff
VCE=25V
VGE=0V
f=1MHz
VCC = 400V
IC = 50A
VGE = 15V
Tj = 25°C
VCC = 400V
IC = 50A
VGE = 15V
RG = 10Ω
L = 500μH
Energy loss include “tail” and FWD
(FDRW25S60L) reverse recovery.
Tj = 175°C
VCC = 400V
IC = 50A
VGE = 15V
RG = 10Ω
L = 500μH
Energy loss include “tail” and FWD
(FDRW25S60L) reverse recovery.
Thermal resistance
Items
Symbols
Thermal Resistance, Junction-Ambient
Thermal Resistance Junction to Case
Rth(j-a)
Rth(j-c)
Conditions
1
Tj =25°C
Tj =175°C
Tj =25°C
Tj =175°C
Characteristics
min.
typ.
max.
600
250
10
200
4.0
5.0
6.0
1.50
1.95
1.80
4320
210
160
-
305
-
-
35
75
310
60
1.4
-
-
1.7
-
-
40
85
335
72
2.4
-
-
2.2
-
Characteristics
min.
typ.
max.
50
0.417
Unit
V
µA
mA
nA
V
V
pF
nC
ns
mJ
ns
mJ
Unit
°C/W
FGW50N60H
Discrete IGBT
http://www.fujielectric.com/products/semiconductor/
Characteristics (Representative)
Graph.1
DC Collector Current vs T
V ≥+15V, T ≤175ºC
Graph.2
Collector Current vs. switching frequency
V =+15V, T ≤175ºC, V =400V, D=0.5,
R =10Ω, T =100ºC
C
GE
j
GE
C
G
140
120
120
100
Switching frequency fs [kHz]
Collector current IC [A]
CC
C
100
80
Tj≤175℃
60
40
80
60
40
20
20
0
0
25
50
75
100
125
150
175
0
20
Case Temperature [°C]
40
60
80
100
Collector-Emitter corrent : ICE [A]
Graph.3
Typical Output Characteristics (V -I )
T =25ºC
CE
Graph.4
Typical Output Characteristics (V -I )
T =175ºC
C
CE
j
C
j
100
100
VGE=20V
12V
15V
VGE=20V
8V
10V
15V
80
80
12V
10V
8V
60
IC [A]
IC [A]
60
40
40
20
20
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0.0
4.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VCE [V]
VCE [V]
Graph.6
Gate Threshold Voltage vs. T
I =50mA, V =20V
Graph.5
Typical Transfer Characteristics
V =+15V
GE
C
j
CE
8
100
7
Gate Threshold Voltage VGE(th) [V]
80
IC [A]
60
Tj=175℃
Tj=25℃
40
20
max.
6
5
typ.
4
min.
3
2
1
0
0
0
2
4
6
8
-50
10
-25
0
25
50
75
Tj [℃]
VGE [V]
2
100
125
150
175
FGW50N60H
Discrete IGBT
http://www.fujielectric.com/products/semiconductor/
Graph.8
Typical Gate Charge
V =400V, I =50A, T =25ºC
Graph.7
Typical Capacitance
V =0V, f=1MHz, T =25ºC
GE
CC
j
C
j
20
4
10
Cies
15
Vcc=400V
3
VGE [V]
C [pF]
10
Coes
2
Cres
10
10
5
1
10
0
-2
-1
10
0
10
B
1
10
10
0
50
100
150
Graph.9
Typical switching time vs. I
T =175ºC, V =400V, L=500µH
V =15V,R =10Ω
CC
400
C
1000
td(off)
td(off)
Switching Times [nsec]
Switching Times [nsec]
350
GE
G
1000
100
tf
td(on)
tr
10
1
tr
tf
100
td(on)
10
1
0
20
40
60
80
100
0
10
20
Collector Current IC [A]
50
60
G
j
CC
GE
40
Graph.12
Typical switching losses vs. R
T =175ºC, V =400V, I =50A, L=500µH
V =15V
C
j
30
Gate Resistor Rg [Ω]
Graph.11
Typical switching losses vs. I
T =175ºC, V =400V, L=500µH
V =15V, R =10Ω
CC
C
GE
G
8
8
Switching Energy Losses [mJ]
Switching Energy Losses [mJ]
300
G
j
CC
GE
250
Graph.10
Typical switching time vs. R
T =175ºC, V =400V, I =50A, L=500µH
V =15V
C
j
200
Qg [nC]
VCE [V]
6
Eoff
Eon
4
2
6
4
Eoff
Eon
2
0
0
0
20
40
60
80
100
0
120
10
20
30
40
Gate Resistor Rg [Ω]
Collector Current IC [A]
3
50
60
FGW50N60H
Discrete IGBT
http://www.fujielectric.com/products/semiconductor/
Graph.14
Transient thermal resistance of IGBT
Graph.13
Reverse biased Safe Operating Area
T ≤175ºC, V =+15V/0V, R =10Ω
j
GE
G
101
300
Zth(j-c) [℃/W]
Collector current IC [A]
100
200
10-1
10-2
100
10-3
10-6
0
0
200
400
600
10-5
10-4
10-3
t [sec]
800
Collector-Emitter voltage : VCE [V]
4
10-2
10-1
100
FGW50N60H
Discrete IGBT
http://www.fujielectric.com/products/semiconductor/
Outline Drawings, mm
Outview : TO-247 Package
①
②
③
CONNECTION
① GATE
② COLLECTOR
③ EMITTER
①
②
DIMENSIONS ARE IN MILLIMETERS.
③
5
FGW50N60H
Discrete IGBT
http://www.fujielectric.com/products/semiconductor/
WARNING
1.This Catalog contains the product specifications, characteristics, data, materials, and structures as of May 2011.
The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be
sur to obtain the latest specifications.
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the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your
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