FUJI FGW75N60HD

http://www.fujielectric.com/products/semiconductor/
FGW75N60HD
Discrete IGBT
Discrete IGBT (High-Speed V series)
600V / 75A
Features
Low power loss
Low switching surge and noise
High reliability, high ruggedness (RBSOA, SCSOA etc.)
Applications
Uninterruptible power supply
Power coditionner
Power factor correction circuit
Equivalent circuit
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at TC =25°C unless otherwise specified)
Items
Collector-Emitter voltage
Gate-Emitter voltage
DC Collector Current
Symbols
VCES
VGES
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100
A
75
225
225
60
35
225
A
A
A
A
A
A
5
μs
500
190
-40~+175
-55~+175
°C
°C
Diode Pulsed Current
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ICP
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I FP
Short Circuit Withstand Time
tSC
IGBT Max. Power Dissipation
FWD Max. Power Dissipation
Operating Junction Temperature
Storage Temperature
PD_IGBT
PD_FWD
Tj
Tstg
Pulsed Collector Current
Turn-Off Safe Operating Area
Diode Forward Current
Characteristics Units
600
V
±20
V
W
Remarks
Collector
TC =25°C, Tj =150°C
Note *1
TC =100°C, Tj =150°C
Note *2
VCE ≤600V, Tj ≤175°C
Note *1
Gate
Note *1
VCC ≤300V, VGE=12V
Tj ≤175°C
TC =25°C
TC =25°C
Emitter
Note *1 : Current value limited by bonding wire.
Note *2 : Pulse width limited by Tjmax.
Electrical characteristics (at Tj = 25°C unless otherwise specified)
Items
Symbols
Conditions
Collector-Emitter Breakdown Voltage
V(BR)CES
IC = 250μA, VGE = 0V
Zero Gate Voltage Collector Current
ICES
VCE = 600V, VGE = 0V
Gate-Emitter Leakage Current
Gate-Emitter Threshold Voltage
IGES
VGE (th)
VCE = 0V, VGE = ±20V
VCE = +20V, IC = 75mA
Collector-Emitter Saturation Voltage
VCE (sat)
VGE = +15V, IC = 75A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Cies
Coes
Cres
Gate Charge
QG
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Energy
td(on)
tr
td(off)
tf
Eon
Turn-Off Energy
Eoff
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Energy
td(on)
tr
td(off)
tf
Eon
Turn-Off Energy
Eoff
VCE=25V
VGE=0V
f=1MHz
VCC = 400V
IC = 75A
VGE = 15V
Tj = 25°C
VCC = 400V
IC = 75A
VGE = 15V
RG = 10Ω
L = 500μH
Energy loss include “tail” and FWD reverse
recovery.
Tj = 175°C
VCC = 400V
IC = 75A
VGE = 15V
RG = 10Ω
L = 500μH
Energy loss include “tail” and FWD reverse
recovery.
1
Tj =25°C
Tj =175°C
Tj =25°C
Tj =175°C
Characteristics
min.
typ.
max.
600
250
10
200
4.0
5.0
6.0
1.50
1.95
1.80
6150
300
240
-
460
-
-
45
130
450
105
3.0
-
-
4.2
-
-
45
130
490
120
4.3
-
-
4.8
-
Units
V
µA
mA
nA
V
V
pF
nC
ns
mJ
ns
mJ
FGW75N60HD
Discrete IGBT
http://www.fujielectric.com/products/semiconductor/
FWD Characteristics
Description
Symbol
Forward Voltage Drop
VF
Diode Reverse Recovery Time
trr1
Diode Reverse Recovery Time
trr2
Diode Reverse Recovery Charge
Qrr
Diode Reverse Recovery Time
trr2
Diode Reverse Recovery Charge
Qrr
Conditions
IF=35A
VCC =30V,IF = 3.5A
-di/dt=200A/μs
VCC =400V
IF=35A
-diF /dt=200A/µs
Tj =25°C
VCC =400V
IF=35A
-diF/dt=200A/µs
Tj =175°C
Thermal resistance characteristics
Items
Symbols
Conditions
Thermal Resistance, Junction-Ambient
Thermal Resistance, IGBT Junction to Case
Thermal Resistance, FWD Junction to Case
Rth(j-a)
Rth(j-c)_IGBT
Rth(j-c)_FWD
-
2
Tj =25°C
Tj =175°C
Characteristics
min.
typ.
max.
2.0
2.6
1.4
-
Unit
V
V
26
36
ns
0.05
-
μs
-
0.12
-
μC
-
0.19
-
μs
-
1.10
-
μC
Characteristics
min.
typ.
max.
50
0.298
0.781
Units
°C/W
FGW75N60HD
Discrete IGBT
http://www.fujielectric.com/products/semiconductor/
Characteristics (Representative)
Graph.1
DC Collector Current vs T
V ≥+15V, T ≤175ºC
Graph.2
Collector Current vs. switching frequency
V =+15V, T ≤175ºC, V =400V, D=0.5,
R =10Ω, T =100ºC
C
GE
j
GE
C
G
CC
C
140
100
120
Switching frequency fs [kHz]
Collector current IC [A]
100
Tj≤175℃
80
60
40
80
60
40
20
20
0
0
25
50
75
100
125
150
0
175
20
Graph.3
Typical Output Characteristics (V -I )
T =25ºC
CE
p
60
80
100
120
Graph.4
Typical Output Characteristics (V -I )
T =175ºC
C
CE
j
150
40
Collector-Emitter corrent : ICE [A]
Case Temperature [°C]
C
j
j
150
VGE=20V
VGE=20V
12V
15V
125
125
10V
8V
12V
15V
100
100
75
75
IC [A]
IC [A]
10V
50
50
25
25
0
8V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.0
0.5
1.0
1.5
VCE [V]
2.0
2.5
3.0
3.5
4.0
VCE [V]
Graph.6
Gate Threshold Voltage vs. T
I =75mA, V =20V
Graph.5
Typical Transfer Characteristics
V =+15V
j
GE
C
CE
8
120
7
Gate Threshold Voltage VGE(th) [V]
100
IC [A]
80
60
Tj=175℃
Tj=25℃
40
20
max.
6
5
typ.
4
min.
3
2
1
0
0
0
2
4
6
8
-50
10
-25
0
25
50
75
Tj [℃]
VGE [V]
3
100
125
150
175
FGW75N60HD
Discrete IGBT
http://www.fujielectric.com/products/semiconductor/
Graph.8
Typical Gate Charge
V =400V, I =75A, T =25ºC
Graph.7
Typical Capacitance
V =0V, f=1MHz, T =25ºC
GE
CC
j
C
j
20
4
10
Cies
15
VCC=400V
VGE [V]
C [pF]
3
10
Coes
10
Cres
2
10
5
1
10
0
-2
-1
10
0
10
1
10
10
B
0
100
200
Graph.9
Typical switching time vs. I
T =175ºC, V =400V, L=500µH
V =15V,R =10Ω
g
tf
td(on)
tr
10
1
C
td(off)
tr
tf
100
td(on)
10
1
0
20
40
60
80
100
120
140
0
Collector Current IC [A]
GE
,
G
, g
30
40
50
60
G
j
CC
12
20
Graph.12
Typical switching losses vs. R
T =175ºC, V =400V, I =75A, L=500µH
V =15V
C
j
10
Gate Resistor RG [Ω]
Graph.11
Typical switching losses vs. I
T =175ºC, V =400V, L=500µH
V =15V, R =10Ω
CC
C
GE
, j
j
12
10
10
Switching Energy Losses [mJ]
Switching Energy Losses [mJ]
CC
1000
td(off)
100
600
GE
j
Switching Times [nsec]
Switching Times [nsec]
1000
G
500
G
j
CC
GE
400
Graph.10
Typical switching time vs. R
T =175ºC, V =400V, I =75A, L=500µH
V =15V
C
j
300
QG [nC]
VCE [V]
8
Eoff
Eon
6
4
2
Eoff
8
Eon
6
4
2
0
0
0
20
40
60
80
100
120
0
140
10
20
30
40
Gate Resistor RG [Ω]
Collector Current IC [A]
4
50
60
FGW75N60HD
Discrete IGBT
http://www.fujielectric.com/products/semiconductor/
Graph.14
Typical reverse recovery characteristics vs. I
T =175ºC, V =400V, L=500µH
V =15V, R =10Ω
Graph.13
FWD Forward voltage drop (V -I )
F
F
F
j
CC
GE
70
G
250
2.5
200
2.0
Tj=175℃
Reverse recovery Time [nsec]
Tj=25℃
50
IF [A]
40
30
20
150
1.5
trr
100
1.0
Qrr
0.5
50
10
0
0.0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
10
20
30
VF [V]
60
70
Graph.16
Reverse biased Safe Operating Area
T ≤175ºC, V =+15V/0V, R =10Ω
F
j
CC
GE
50
IF [A]
Graph.15
Typical reverse recovery loss vs. I
T =175ºC, V =400V, L=500µH
V =15V, R =10Ω
j
40
GE
G
G
350
400
300
Collector current IC [A]
Reverse recovery loss [uJ]
300
250
200
150
100
200
100
50
0
0
0
10
20
30
40
50
60
70
0
200
400
600
Collector-Emitter voltage : VCE [V]
IF [A]
5
800
Reverse Recovery Charge [uC]
60
FGW75N60HD
Discrete IGBT
http://www.fujielectric.com/products/semiconductor/
Graph.17
Transient thermal resistance of IGBT
101
Zth(j-c) [℃/W]
100
10-1
10-2
10-3
10-6
10-5
10-4
10-3
10-2
10-1
100
10-1
100
t [sec]
Graph.18
Transient thermal resistance of FWD
101
Zth(j-c) [℃/W]
100
10-1
10-2
10-3
10-6
10-5
10-4
10-3
10-2
t [sec]
6
FGW75N60HD
Discrete IGBT
http://www.fujielectric.com/products/semiconductor/
Outline Drawings, mm
Outview : TO-247 Package
①
②
③
CONNECTION
① GATE
② COLLECTOR
③ EMITTER
①
②
DIMENSIONS ARE IN MILLIMETERS.
③
7
FGW75N60HD
Discrete IGBT
http://www.fujielectric.com/products/semiconductor/
WARNING
1.This Catalog contains the product specifications, characteristics, data, materials, and structures as of May 2011.
The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be
sur to obtain the latest specifications.
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8