FH1100 SILICON DIODE DESCRIPTION: The ASI FH1100 is a Silicon Diffused Hot Carrier Diode. PACKAGE STYLE DO-7 FEATURES INCLUDE: • QS = 1.6 pC Typ. • C = 1.0 pF Max. @ f = 890 MHz • Hermetic Glass Package MAXIMUM RATINGS IF 10 mA VR 5.0 V PDISS 100 mW @ TC = 25 °C TJ -65 °C to +125 °C TSTG -65 °C to +150 °C Tsoldering +260 °C for 5 Seconds CHARACTERISTICS SYMBOL TC = 25 °C TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS VF IF = 10 mA 550 mV IR VR = 1.0 V 1.0 µA VBR IR = 100 µA CT0 VR = 0 V NF QS V 5.0 f = 1.0 MHz f = 890 MHz IF = 10 mA 10 1.6 A D V A N C E D S E M I C O N D U C T O R, I N C 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. pF 1.0 dB pC REV. A 1/1