Pb Free Plating Product ISSUED DATE :2005/09/14 REVISED DATE : GC01L60 BVDSS RDS(ON) ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 600V 12 160mA Description The GC01L06 utilized advanced processing techniques to achieve the possible on-resistance, extremely efficient and cost-effectiveness device. Features *Simple Drive Requirement *Low Gate Charge *Fast Switching Characteristics Package Dimensions D TO-92 E A S1 b1 S E A T IN G PLANE L REF. e1 C b e A S1 b b1 C Millimeter Min. Max. 4.45 4.7 1.02 0.36 0.51 0.36 0.76 0.36 0.51 REF. D E L e1 e Millimeter Min. Max. 4.44 4.7 3.30 3.81 12.70 1.150 1.390 2.42 2.66 Absolute Maximum Ratings Parameter Symbol Ratings Unit Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS 30 V Continuous Drain Current, VGS@10V ID @TA=25 160 mA Continuous Drain Current, VGS@10V ID @TA=100 100 mA 300 mA 0.83 W EAS 0.5 mJ IAR 1 A Tj, Tstg -55 ~ +150 Symbol Value Rthj-a 150 Pulsed Drain Current 1 IDM PD @TC=25 Total Power Dissipation Single Pulse Avalanche Energy 2 Avalanche Current Operating Junction and Storage Temperature Range Thermal Data Parameter Thermal Resistance Junction-ambient GC01L60 Max. Unit /W Page: 1/4 ISSUED DATE :2005/09/14 REVISED DATE : Electrical Characteristics(Tj = 25 Parameter Unless otherwise specified) Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS 600 - - V Breakdown Voltage Temperature Coefficient BVDSS / Tj - 0.8 - Gate Threshold Voltage VGS(th) 2.0 - 4.0 V VDS=VGS, ID=250uA gfs - 0.8 - S VDS=10V, ID=0.5A IGSS - - 100 nA VGS= - - 10 uA VDS=600V, VGS=0 - - 100 uA VDS=480V, VGS=0 RDS(ON) - - 12 Qg - 5 8 Gate-Source Charge Qgs - 1.5 - Gate-Drain (“Miller”) Change Qgd - 0.7 - Td(on) - 8 - Tr - 5 - Td(off) - 13 - Tf - 9 - Input Capacitance Ciss - 260 420 Output Capacitance Coss - 20 - Reverse Transfer Capacitance Crss - 3 - Rg - 3 - Symbol Min. Typ. Max. Unit VSD - - 1.2 V IS=160mA, VGS=0V Reverse Recovery Time3 Trr - 345 - ns Reverse Recovery Charge Qrr - 1 - nC IS=1A, VGS=0V dI/dt=100A/ s Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=150 ) 3 Static Drain-Source On-Resistance 3 Total Gate Charge Turn-on Delay Time3 Rise Time Turn-off Delay Time Fall Time Gate Resistance IDSS V/ Test Conditions VGS=0, ID=1mA Reference to 25 , ID=1mA 30V VGS=10V, ID=0.5A nC ID=0.5A VDS=480V VGS=10V ns VDD=300V ID=1A VGS=10V RG=10 RD=300 pF VGS=0V VDS=25V f=1.0MHz f=1.0MHz Source-Drain Diode Parameter Forward On Voltage3 Test Conditions Notes: 1. Pulse width limited by safe operating area. 2. Staring Tj=25 , VDD=50V, L=1mH, RG=25 , IAS=1A. 3. Pulse width 300us, duty cycle 2%. GC01L60 Page: 2/4 ISSUED DATE :2005/09/14 REVISED DATE : Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Normalized BVDSS v.s. Junction Temperature Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature GC01L60 Page: 3/4 ISSUED DATE :2005/09/14 REVISED DATE : Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Drain Current v.s. Case Temperature Fig 10. Type Power Dissipation Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GC01L60 Page: 4/4