ISSUED DATE :2004/11/30 REVISED DATE : G D 5 11 S U R F A C E M O U N T, S W I T C H I N G D I O D E V O LT A G E 8 5 V, C U R R E N T 0 . 1 A Description The GD511 is designed for ultra high speed switching application, low forward voltage and fast reverse recovery time. Package Dimensions REF. A A1 A2 D E HE Millimeter Min. Max. 0.85 1.05 0 0.10 0.80 1.00 1.15 1.45 1.60 1.80 2.30 2.70 REF. L b c Q1 Millimeter Min. Max. 0.20 0.25 0.10 0.40 0.40 0.18 0.15 BSC. Absolute Maximum Ratings at Ta = 25 Parameter Symbol Ratings Unit Junction Temperature Tj +150 Storage Temperature Tstg -55 ~ +150 Maximum Peak Reverse Voltage VRM 85 V Maximum Reverse Voltage VR 80 V Maximum (Peak) Forward Current IFM 300 mA Average Forward Current IO 100 mA Surge Current(10ms) IFSM 2 A Total Power Dissipation PD 150 mW Electrical Characteristics at Ta = 25 Characteristic Forward Voltage Symbol Min. Typ. Max. Unit VF(1) - 0.6 - V Test Conditions VF(2) - 0.7 - V IF=10mA VF(3) - 0.9 1.2 V IF=100mA IF=1mA Reverse Current IR - - 0.5 A Total Capacitance CT - 2.2 4.0 pF VR=0, f=1MHz Reverse Recovery Time Trr - 1.6 4.0 nS IF=10mA VR=80V 1/2 ISSUED DATE :2004/11/30 REVISED DATE : Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 2/2