GP1S32 GP1S32 Subminiature Photointerrupter ■ Features ■ Outline Dimensions 1. Ultra-compact package 2. PWB mounting type 3. High sensing accuracy ( Slit width : 0.3mm ) 4. High speed response ( Unit : mm ) Internal connection diagram 4 3 1 2 1 Anode 2 Collector 4.2 4.2 + 0.2 1.15 1.6 - 0.1 (0.3) Slit width Center of light path (1.0) 3.5 (1.0) 1. Floppy disk drives (C0.8) 5.2 ■ Applications 0.2 0.1 4 - 0.5 ❈3.2 ■ Absolute Maximum Ratings Output ❈2.5 1 2 4 3 * Tolerance :± 0.2mm * Burr's dimensions: 0.15MAX. * Rest of gate : 0.3MAX. * ( ): Reference dimensions * The dimensions indicated by ❈ refer to those measured from the lead base. ( Ta = 25˚C ) Symbol IF VR P VCEO VECO IC PC Ptot T opr T stg T sol Rating 50 6 75 35 6 20 75 100 - 25 to + 85 - 40 to + 100 260 Unit mA V mW V V mA mW mW ˚C ˚C ˚C 0.6mm or more Input Parameter Forward current Reverse voltage Power dissipation Collector-emitter voltage Emitter-collector voltage Collector current Collector power dissipation Total power dissipation Operating temperature Storage temperature *1 Soldering temperature 4.0MIN. Rest of gate 4 - 0.15+- 3 Emitter 4 Cathode Soldering area *1 For 5 seconds “ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.” GP1S32 ■ Electro-optical Characteristics ( Ta = 25˚C ) Parameter Forward voltage Reverse current Collector dark current Collector current Collector-emitter saturation voltage Rise time Response time Fall time Input Output Transfer characteristics Symbol VF IR I CEO IC V CE(sat) tr tf TYP. 1.2 35 35 MAX. 1.4 10 100 300 0.4 100 100 Fig. 2 Power Dissipation vs. Ambient Temperature 60 120 50 100 Power dissipation P ( mW ) Forward current I F ( mA ) Fig. 1 Forward Current vs. Ambient Temperature MIN. 50 - Condition I F = 20mA V R = 3V V CE = 20V V CE = 5V, I F = 5mA I F = 10mA, I C = 50 µ A VCE = 5V, I C = 100 µ A R L = 1 000 Ω 40 30 20 10 P tot P, P c 80 60 40 20 0 - 25 0 25 75 85 50 0 - 25 100 Ambient temperature T a ( ˚C ) 0 25 50 75 85 100 Ambient temperature T a ( ˚C ) Fig. 3 Forward Current vs. Forward Voltage Fig. 4 Collector Current vs. Forward Current 500 T a = 75˚C 50˚C 100 VCE = 5V T a = 25˚C 1.0 25˚C 0˚C - 25˚C Collector current I C ( mA ) Forward current I F ( mA ) 200 50 20 10 0.8 0.6 0.4 5 0.2 2 1 0 0.5 1 1.5 Forward voltage VF ( V ) 2 2.5 3 0 0 10 Forward current I F ( mA ) 20 Unit V µA nA µA V µs µs GP1S32 Fig. 5 Collector Current vs. Collector-emitter Voltage Fig. 6 Collector Current vs. Ambient Temperature 200 T a = 25˚C 1.8 1.6 I F = 50mA 1.4 40mA 1.2 30mA 1.0 0.8 20mA 0.6 0.4 10mA 0.2 5mA 150 Collector current I C (µ A) Collector current I C ( mA ) 2.0 100 50 0 - 25 0 0 2 4 6 8 10 0 Collector-emitter voltage V CE ( V ) 25 50 75 85 Ambient temperature T a ( ˚C ) Fig. 8 Collector Dark Current vs. Ambient Temperature Fig. 7 Collector-emitter Saturation Voltage vs. Ambient Temperature 10 - 6 V CE = 20V 5 Collector dark current I CEO ( A) Collector-emitter saturation voltage VCE(sat) ( V ) 0.16 0.14 0.12 0.10 I F = 10mA I C = 50µ A 0.08 2 10 - 7 5 2 10 - 8 5 2 10 - 9 5 2 - 25 0 25 50 10 - 10 75 85 0 25 Ambient temperature Ta ( ˚C ) 50 75 100 Ambient temperature T a ( ˚C ) Fig. 9 Response Time vs. Load Resistance Response time ( µ s ) 100 VCE = 5V I C = 100µ A T a = 25˚C tr Test Circuit for Response Time tf 50 Input VCC td Input RD RL Output 10 Output 10% ts 90% 5 td ts tr 1 0.5 1 5 10 Load resistance R L ( kΩ ) 50 tf GP1S32 Fig.10 Relative Collector Current vs. Shield Distance ( 1 ) Fig.11 Relative Collector Current vs. Shield Distance ( 2 ) Shield 70 60 50 I F = 5mA VCE = 5V T a = 25˚C 40 30 ● 80 70 I F = 5mA VCE = 5V T a = 25˚C 60 50 40 30 20 10 10 1 2 3 Please refer to the chapter “ Precautions for Use” . + 90 20 Shield distance L ( mm ) L= 0 100 L L Relative collector current ( % ) Relative collector current ( % ) + 90 80 - Shield L= 0 - 100 1 2 Shield distance L ( mm ) 3