Pb Free Plating Product ISSUED DATE :2006/04/24 REVISED DATE : N-CH BVDSS 20V N-CH RDS(ON) 30m N-CH ID 6A P-CH BVDSS -20V N-CH RDS(ON) 50m N-CH ID -5A GSS2030 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The GSS2030 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Features *Simple Drive Requirement *Low On-resistance *Fast Switching Package Dimensions REF. A B C D E F Millimeter Min. Max. 5.80 4.80 3.80 0° 0.40 0.19 Absolute Maximum Ratings Parameter Symbol Drain-Source Voltage Gate-Source Voltage 6.20 5.00 4.00 8° 0.90 0.25 Ratings N-channel P-channel REF. M H L J K G Millimeter Min. Max. 0.10 0.25 0.35 0.49 1.35 1.75 0.375 REF. 45° 1.27 TYP. Unit VDS 20 -20 V VGS ±8 ±8 V Continuous Drain Current 3 ID @TA=25 6 -5 A Continuous Drain Current 3 ID @TA=70 4.8 -4 A 20 -20 A Pulsed Drain Current 1 IDM Total Power Dissipation PD @TA=25 Linear Derating Factor 2.0 0.016 Operating Junction and Storage Temperature Range Tj, Tstg -55 ~ +150 Symbol Value Rthj-a 62.5 W W/ Thermal Data Parameter Thermal Resistance Junction-ambient GSS2030 3 Max. Unit /W Page: 1/7 ISSUED DATE :2006/04/24 REVISED DATE : N-Channel Electrical Characteristics (Tj = 25 Parameter unless otherwise specified) Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS 20 - - V Breakdown Voltage Temperature Coefficient BVDSS / Tj - 0.037 - Gate Threshold Voltage VGS(th) 0.5 - 1.2 V VDS=VGS, ID=250uA gfs - 18.5 - S VDS=10V, ID=6A IGSS - - ±100 nA VGS= ±8V - - 1 uA VDS=20V, VGS=0 - - 25 uA VDS=16V, VGS=0 - - 30 Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=70 ) Static Drain-Source On-Resistance2 2 IDSS RDS(ON) 45 V/ m Test Conditions VGS=0, ID=250uA Reference to 25 , ID=1mA VGS=4.5V, ID=6A VGS=2.5V, ID=5.2A Total Gate Charge Qg - 9 - Gate-Source Charge Qgs - 1.8 - Gate-Drain (“Miller”) Change Qgd - 4.2 - Td(on) - 29 - Tr - 65 - Td(off) - 60 - Tf - 50 - Ciss - 300 - Output Capacitance Coss - 255 - Reverse Transfer Capacitance Crss - 115 - Symbol Min. Typ. Max. Unit VSD - - 1.2 V IS=1.7A, VGS=0V, Tj=25 IS - - 1.67 A VD=VG=0V, VS=1.2V 2 Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance nC ID=6A VDS=10V VGS=4.5V ns VDS=10V ID=1A VGS=4.5 RG=6 RD=10 pF VGS=0V VDS=8V f=1.0MHz Source-Drain Diode Parameter Forward On Voltage2 Continuous Source Current (Body Diode) Test Conditions Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board; 135 /W when mounted on Min. copper pad. GSS2030 Page: 2/7 ISSUED DATE :2006/04/24 REVISED DATE : P-Channel Electrical Characteristics (Tj = 25 Parameter unless otherwise specified) Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS -20 - - V Breakdown Voltage Temperature Coefficient BVDSS / Tj - -0.037 - Gate Threshold Voltage VGS(th) -0.5 - -1.0 V VDS=VGS, ID=-250uA gfs - 2.5 - S VDS=-10V, ID=-2.2A IGSS - - ±100 nA VGS= ±8V - - -1 uA VDS=-20V, VGS=0 - - -25 uA VDS=-16V, VGS=0 - - 50 Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=70 ) Static Drain-Source On-Resistance2 2 IDSS RDS(ON) 80 V/ m Test Conditions VGS=0, ID=-250uA Reference to 25 , ID=-1mA VGS=-4.5V, ID=-2.2A VGS=-2.5V, ID=-1.8A Total Gate Charge Qg - 11.5 - Gate-Source Charge Qgs - 3.2 - Gate-Drain (“Miller”) Change Qgd - 1.5 - Td(on) - 10 - Tr - 25 - Td(off) - 50 - Tf - 30 - Ciss - 940 - Output Capacitance Coss - 440 - Reverse Transfer Capacitance Crss - 130 - Symbol Min. Typ. Max. Unit VSD - - -1.2 V IS=-1.8A, VGS=0V, Tj=25 IS - - -1.67 A VD=VG=0V, VS=-1.2V 2 Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance nC ID=-2.2A VDS=-16V VGS=-4.5V ns VDS=-10V ID=-2.2A VGS=-4.5V RG=6 RD=4.5 pF VGS=0V VDS=-15V f=1.0MHz Source-Drain Diode Parameter Forward On Voltage2 Continuous Source Current (Body Diode) Test Conditions Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board; 135 /W when mounted on Min. copper pad. GSS2030 Page: 3/7 ISSUED DATE :2006/04/24 REVISED DATE : Characteristics Curve N-Channel Fig 1. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 5. Forward Characteristics of Reverse Diode GSS2030 Fig 2. Typical Output Characteristics Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 6. Gate Threshold Voltage v.s. Junction Temperature Page: 4/7 ISSUED DATE :2006/04/24 REVISED DATE : N-Channel Fig 7. Gate Charge Characteristics Fig 9. Maximum Safe Operating Area Fig 11. Switching Time Waveform GSS2030 Fig 8. Typical Capacitance Characteristics Fig 10. Effective Transient Thermal Impedance Fig 12. Gate Charge Waveform Page: 5/7 ISSUED DATE :2006/04/24 REVISED DATE : P-Channel Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature GSS2030 Page: 6/7 ISSUED DATE :2006/04/24 REVISED DATE : P-Channel Fig 7. Gate Charge Characteristics Fig 9. Maximum Safe Operating Area Fig 11. Switching Time Waveform Fig 8. Typical Capacitance Characteristics Fig 10. Effective Transient Thermal Impedance Fig 12. Gate Charge Waveform Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GSS2030 Page: 7/7