Pb Free Plating Product ISSUED DATE :2006/04/24 REVISED DATE : CH1 BVDSS 30V N-CH RDS(ON) 18m N-CH ID 8.5A CH2 BVDSS 30V N-CH RDS(ON) 26m N-CH ID 7.3A GSS6982 DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The GSS6982 provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. Features *Low On-resistance *Fast Switching Package Dimensions REF. A B C D E F Millimeter Min. Max. 5.80 4.80 3.80 0° 0.40 0.19 Absolute Maximum Ratings Parameter Symbol Drain-Source Voltage Gate-Source Voltage 6.20 5.00 4.00 8° 0.90 0.25 Ratings REF. M H L J K G Millimeter Min. Max. 0.10 0.25 0.35 0.49 1.35 1.75 0.375 REF. 45° 1.27 TYP. Unit CH-1 CH-2 VDS 30 30 V VGS ±25 ±25 V Continuous Drain Current 3 ID @TA=25 8.5 7.3 A Continuous Drain Current 3 ID @TA=70 6.8 5.8 A 30 30 A Pulsed Drain Current 1 IDM Total Power Dissipation PD @TA=25 Linear Derating Factor 2.0 0.016 Operating Junction and Storage Temperature Range Tj, Tstg -55 ~ +150 Symbol Value Rthj-a 62.5 W W/ Thermal Data Parameter Thermal Resistance Junction-ambient GSS6982 3 Max. Unit /W Page: 1/7 ISSUED DATE :2006/04/24 REVISED DATE : CH-1 Electrical Characteristics (Tj = 25 Parameter unless otherwise specified) Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS 30 - - V Breakdown Voltage Temperature Coefficient BVDSS / Tj - 0.03 - Gate Threshold Voltage VGS(th) 1.0 - 3.0 V VDS=VGS, ID=250uA gfs - 12 - S VDS=10V, ID=8A IGSS - - ±100 nA VGS= ±25V - - 1 uA VDS=30V, VGS=0 - - 25 uA VDS=24V, VGS=0 - 15 18 23 30 Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=70 ) Static Drain-Source On-Resistance2 2 IDSS RDS(ON) V/ m Test Conditions VGS=0, ID=250uA Reference to 25 , ID=1mA VGS=10V, ID=8A VGS=4.5V, ID=6A Total Gate Charge Qg - 14 22 Gate-Source Charge Qgs - 4 - Gate-Drain (“Miller”) Change Qgd - 8 - Td(on) - 12 - Tr - 7 - Td(off) - 25 - Tf - 9 - Ciss - 1050 1680 Output Capacitance Coss - 240 - Reverse Transfer Capacitance Crss - 165 - Rg - 1.6 2.4 Symbol Min. Typ. Max. Unit VSD - - 1.2 V IS=1.7A, VGS=0V Reverse Recovery Time Trr - 23 - ns Reverse Recovery Charge Qrr - 15 - nC IS=8A, VGS=0V dI/dt=100A/ s 2 Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Gate Resistance nC ID=8A VDS=24V VGS=4.5V ns VDS=15V ID=1A VGS=10 RG=3.3 RD=15 pF VGS=0V VDS=25V f=1.0MHz f=1.0MHz Source-Drain Diode Parameter Forward On Voltage2 2 Test Conditions Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board, t 10sec; 135 /W when mounted on Min. copper pad. GSS6982 Page: 2/7 ISSUED DATE :2006/04/24 REVISED DATE : CH-2 Electrical Characteristics (Tj = 25 Parameter unless otherwise specified) Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS 30 - - V Breakdown Voltage Temperature Coefficient BVDSS / Tj - 0.03 - Gate Threshold Voltage VGS(th) 1.0 - 3.0 V VDS=VGS, ID=250uA gfs - 10 - S VDS=10V, ID=7A IGSS - - ±100 nA VGS= ±25V - - 1 uA VDS=30V, VGS=0 - - 25 uA VDS=24V, VGS=0 - 22 26 36 45 Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=70 ) Static Drain-Source On-Resistance2 2 IDSS RDS(ON) V/ m Test Conditions VGS=0, ID=250uA Reference to 25 , ID=1mA VGS=10V, ID=7A VGS=4.5V, ID=5A Total Gate Charge Qg - 9 15 Gate-Source Charge Qgs - 3 - Gate-Drain (“Miller”) Change Qgd - 5 - Td(on) - 9 - Tr - 6 - Td(off) - 19 - Tf - 6 - Ciss - 640 1030 Output Capacitance Coss - 150 - Reverse Transfer Capacitance Crss - 105 - Rg - 1.7 2.5 Symbol Min. Typ. Max. Unit VSD - - 1.2 V IS=1.7A, VGS=0V Reverse Recovery Time Trr - 18 - ns Reverse Recovery Charge Qrr - 8 - nC IS=7A, VGS=0V dI/dt=100A/ s 2 Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Gate Resistance nC ID=7A VDS=24V VGS=4.5V ns VDS=15V ID=1A VGS=10 RG=3.3 RD=15 pF VGS=0V VDS=25V f=1.0MHz f=1.0MHz Source-Drain Diode Parameter Forward On Voltage2 2 Test Conditions Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board, t 10sec; 135 /W when mounted on Min. copper pad. GSS6982 Page: 3/7 ISSUED DATE :2006/04/24 REVISED DATE : Characteristics Curve CH-1 Fig 1. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 5. Forward Characteristics of Reverse Diode GSS6982 Fig 2. Typical Output Characteristics Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 6. Gate Threshold Voltage v.s. Junction Temperature Page: 4/7 ISSUED DATE :2006/04/24 REVISED DATE : CH-1 Fig 7. Gate Charge Characteristics Fig 9. Maximum Safe Operating Area Fig 11. Transfer Characteristics GSS6982 Fig 8. Typical Capacitance Characteristics Fig 10. Effective Transient Thermal Impedance Fig 12. Gate Charge Waveform Page: 5/7 ISSUED DATE :2006/04/24 REVISED DATE : CH-2 Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature GSS6982 Page: 6/7 ISSUED DATE :2006/04/24 REVISED DATE : CH-2 Fig 7. Gate Charge Characteristics Fig 9. Maximum Safe Operating Area Fig 11. Transfer Characteristics Fig 8. Typical Capacitance Characteristics Fig 10. Effective Transient Thermal Impedance Fig 12. Gate Charge Waveform Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GSS6982 Page: 7/7