Pb Free Plating Product ISSUED DATE :2006/02/16 REVISED DATE : N-CH BVDSS 20V N-CH RDS(ON) 75m N-CH ID 3.5A P-CH BVDSS -20V N-CH RDS(ON) 160m N-CH ID -2.5A GT3585 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The GT3585 provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness. The SOT-26 package is universally used for all commercial-industrial surface mount applications. Features *Low Gate Change *Low On-resistance *RoHS Compliant Package Dimensions REF. A Max. 3.10 B C D 2.60 1.40 0.30 E F 0 0° Absolute Maximum Ratings Parameter Symbol Drain-Source Voltage Gate-Source Voltage Millimeter Min. 2.70 REF. Dimensions G Millimeter 1.90 REF. 3.00 1.80 0.55 H I J 1.20 REF. 0.12 REF. 0.37 REF. 0.10 10° K L 0.60 REF. 0.95 REF. Ratings N-channel P-channel Unit VDS 20 -20 V VGS ± 12 ± 12 V Continuous Drain Current 3 ID @TA=25 3.5 -2.5 A Continuous Drain Current 3 ID @TA=70 2.8 -1.97 A 10 -10 A Pulsed Drain Current 1 IDM Total Power Dissipation PD @TA=25 Linear Derating Factor 1.14 0.01 Operating Junction and Storage Temperature Range Tj, Tstg -55 ~ +150 Symbol Value Rthj-a 110 W W/ Thermal Data Parameter Thermal Resistance Junction-ambient GT3585 3 Max. Unit /W Page: 1/7 ISSUED DATE :2006/02/16 REVISED DATE : N-Channel Electrical Characteristics (Tj = 25 Parameter unless otherwise specified) Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS 20 - - V Breakdown Voltage Temperature Coefficient BVDSS / Tj - 0.02 - Gate Threshold Voltage VGS(th) 0.5 - 1.2 V VDS=VGS, ID=250uA gfs - 7 - S VDS=5V, ID=3A IGSS - - ±100 nA VGS= ±12V - - 1 uA VDS=20V, VGS=0 - - 10 uA VDS=16V, VGS=0 - - 75 - - 125 Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=70 ) Static Drain-Source On-Resistance2 IDSS RDS(ON) V/ m Test Conditions VGS=0, ID=250uA Reference to 25 , ID=1mA VGS=4.5V, ID=3.5A VGS=2.5V, ID=1.2A Total Gate Charge2 Qg - 4 7 Gate-Source Charge Qgs - 0.7 - Gate-Drain (“Miller”) Change Qgd - 2 - Td(on) - 6 - Tr - 8 - Td(off) - 10 - Tf - 3 - Input Capacitance Ciss - 230 370 Output Capacitance Coss - 55 - Reverse Transfer Capacitance Crss - 40 - Rg - 1.1 1.7 Symbol Min. Typ. Max. Unit VSD - - 1.2 V IS=1.2A, VGS=0V Reverse Recovery Time Trr - 16 - ns Reverse Recovery Charge Qrr - 8 - nC IS=3A, VGS=0V dI/dt=100A/ s Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Gate Resistance nC ID=3A VDS=16V VGS=4.5V ns VDS=15V ID=1A VGS=5V RG=3.3 RD=15 pF VGS=0V VDS=20V f=1.0MHz f=1.0MHz Source-Drain Diode Parameter 2 Forward On Voltage Test Conditions Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 2 3. Surface mounted on 1 in copper pad of FR4 board, t 5sec; 180 /W when mounted on Min. copper pad. GT3585 Page: 2/7 ISSUED DATE :2006/02/16 REVISED DATE : P-Channel Electrical Characteristics (Tj = 25 Parameter unless otherwise specified) Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS -20 - - V Breakdown Voltage Temperature Coefficient BVDSS / Tj - -0.01 - Gate Threshold Voltage VGS(th) - - -1.2 V VDS=VGS, ID=-250uA gfs - 4.0 - S VDS=-5V, ID=-2A IGSS - - ±100 nA VGS= ±12V - - -1 uA VDS=-20V, VGS=0 - - -25 uA VDS=-16V, VGS=0 - - 120 - - 160 - - 300 Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=70 ) 2 Static Drain-Source On-Resistance IDSS RDS(ON) V/ Test Conditions VGS=0, ID=-250uA Reference to 25 , ID=-1mA VGS=-10V, ID=-2.8A m VGS=-4.5V, ID=-2.5A VGS=-2.5V, ID=-2A Total Gate Charge2 Qg - 5 8 Gate-Source Charge Qgs - 1 - Gate-Drain (“Miller”) Change Qgd - 2 - Td(on) - 6 - Tr - 17 - Td(off) - 16 - Tf - 5 - Input Capacitance Ciss - 270 430 Output Capacitance Coss - 70 - Reverse Transfer Capacitance Crss - 55 - Symbol Min. Typ. Max. Unit VSD - - -1.2 V IS=-1.2A, VGS=0V Reverse Recovery Time2 Trr - 20 - ns Reverse Recovery Charge Qrr - 15 - nC IS=-2A, VGS=0V dI/dt=100A/ s Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time nC ID=-2A VDS=-16V VGS=-4.5V ns VDS=-10V ID=-1A VGS=-10V RG=3.3 RD=10 pF VGS=0V VDS=-20V f=1.0MHz Source-Drain Diode Parameter 2 Forward On Voltage Test Conditions Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board, t 5sec; 180 /W when mounted on Min. copper pad. GT3585 Page: 3/7 ISSUED DATE :2006/02/16 REVISED DATE : Characteristics Curve N-Channel Fig 1. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 5. Forward Characteristics of Reverse Diode GT3585 Fig 2. Typical Output Characteristics Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 6. Gate Threshold Voltage v.s. Junction Temperature Page: 4/7 ISSUED DATE :2006/02/16 REVISED DATE : N-Channel Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 180 Fig 9. Maximum Safe Operating Area Fig 11. Transfer Characteristics GT3585 /W Fig 10. Effective Transient Thermal Impedance Fig 12. Gate Charge Waveform Page: 5/7 ISSUED DATE :2006/02/16 REVISED DATE : P-Channel Fig 1. Typical Output Characteristics GT3585 Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature Page: 6/7 ISSUED DATE :2006/02/16 REVISED DATE : P-Channel Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 180 Fig 9. Maximum Safe Operating Area Fig 11. Switching Time Waveform /W Fig 10. Effective Transient Thermal Impedance Fig 12. Gate Charge Waveform Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GT3585 Page: 7/7