TOSHIBA GT40RR21

GT40RR21
Discrete IGBTs
Silicon N-Channel IGBT
GT40RR21
1. Applications
•
Dedicated to Voltage-Resonant Inverter Switching Applications
Note:
The product(s) described herein should not be used for any other application.
2. Features
(1)
6.5th generation
(2)
The RC-IGBT consists of a freewheeling diode monolithically integrated in an IGBT chip.
(3)
Enhancement mode
(4)
High-speed switching
IGBT : tf = 0.21 µs (typ.) (IC = 40 A)
FWD : trr = 0.60 µs (typ.) (IF = 15 A)
(5)
Low saturation voltage : VCE(sat) = 2.05 V (typ.) (IC = 40 A)
(6)
High junction temperature : Tj = 175 (max)
3. Packaging and Internal Circuit
1: Gate
2: Collector
3: Emitter
TO-3P(N)
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Rev.1.0
GT40RR21
, unless otherwise specified)
4. Absolute Maximum Ratings (Note) (Ta = 25
25
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
VCES
1350
V
Gate-emitter voltage
VGES
±25
IC
40
Collector current (DC)
(Tc = 25)
Collector current (DC)
(Tc = 100)
A
33
Collector current (3 µs)
ICP
Collector current (1 ms)
200
80
Diode forward current (DC)
IF
20
Diode forward current (100 µs)
IFP
80
PC
230
W
Tj
175

Storage temperature
Tstg
-55 to 175
Mounting torque
TOR
0.8
Collector power dissipation
(Tc = 25)
Junction temperature
Note:
(Note 1)
Nm
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
In general, loss of IGBT increases more when it has positive temperature coefficient and gets higher
temperature.
In case that the temperature rise due to loss of IGBT exceeds the heat release capacity of a device, it leads
to thermorunaway and results in destruction.
Therefore, please design heat release of a device with due consideration to the temperature rise of IGBT.
Note 1: Ensure that the junction temperature does not exceed 175.
5. Thermal Characteristics
Characteristics
Junction-to-case thermal resistance
2
Symbol
Max
Unit
Rth(j-c)
0.65
/W
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Rev.1.0
GT40RR21
6. Electrical Characteristics
, unless otherwise specified)
6.1. Static Characteristics (Ta = 25
25
Characteristics
Gate leakage current
Collector cut-off current
Symbol
Test Condition
IGES
VGE = ±25 V, VCE = 0 V
ICES
VCE = 1350 V, VGE = 0 V
Min
Typ.
Max
Unit


±100
nA


1.0
mA
Gate-emitter cut-off voltage
VGE(OFF) IC = 40 mA, VCE = 5 V
4.5

7.5
V
Collector-emitter saturation voltage
VCE(sat)(1) IC = 20 A, VGE = 15 V

1.60

Collector-emitter saturation voltage
VCE(sat)(2) IC = 20 A, VGE = 15 V,
Tj = 125

1.85

Collector-emitter saturation voltage
VCE(sat)(3) IC = 20 A, VGE = 15 V,
Tj = 175

2.00

Collector-emitter saturation voltage
VCE(sat)(4) IC = 40 A, VGE = 15 V

2.05
2.80
Collector-emitter saturation voltage
VCE(sat)(5) IC = 40 A, VGE = 15 V,
Tj = 125

2.45

Collector-emitter saturation voltage
VCE(sat)(6) IC = 40 A, VGE = 15 V,
Tj = 175

2.70


1.75
2.80
Diode forward voltage
VF
IF = 15 A, VGE = 0 V
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GT40RR21
, unless otherwise specified)
6.2. Dynamic Characteristics (Ta = 25
25
Characteristics
Input capacitance
Symbol
Cies
Switching time (rise time)
tr
Switching time (turn-on time)
ton
Switching time (fall time)
Switching time (turn-off time)
tf
Test Condition
Min
Typ.
Max
Unit
VCE = 10 V, VGE = 0 V,
f = 1 MHz

1500

pF
Resistive load
VCC = 600 V, IC = 40 A,
VGG = ±15 V, RG = 39 Ω
See Fig. 6.2.1, 6.2.2.

0.12

µs

0.20


0.21
0.40

0.40

toff
Switching loss (turn-off switching loss)
Eoff(1)
Inductive Load
VCC = 280 V, IC = 40 A,
L = 30 µH,C = 0.33 µF,
VGG = 20 V, RG = 10 Ω
See Fig. 6.2.3, 6.2.4.

0.28

Switching loss (turn-off switching loss)
Eoff(2)
Inductive Load
VCC = 280 V, IC = 40 A,
L = 30 µH,C = 0.33 µH,
VGG = 20 V, RG = 10 Ω
Tc = 125
See Fig. 6.2.3, 6.2.4.

0.54

IF = 15 A, VGE = 0 V,
di/dt = -20 A/µs

0.60

Reverse recovery time
trr
mJ
µs
Fig. 6.2.1 Test Circuit of Switching Time
Fig. 6.2.2 Timing Chart of Switching Time
Fig. 6.2.3 Test Circuit of Switching Loss
Fig. 6.2.4 Timing Chart of Switching Loss
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GT40RR21
7. Marking (Note)
Fig. 7.1 Marking
Note:
A line under a Lot No. identifies the indication of product Labels.
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on
the restriction of the use of certain hazardous substances in electrical and electronic equipment.
Note:
This transistor is sensitive to electrostatic discharge and should be handled with care.
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GT40RR21
8. Characteristics Curves (Note)
Fig. 8.1 IC - VCE
Fig. 8.2 IC - VCE
Fig. 8.3 IC - VCE
Fig. 8.4 IC - VCE
Fig. 8.5 VCE(sat) - Tc
Fig. 8.6 IC - VGE
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GT40RR21
Note:
Fig. 8.7 Switching Time - RG
Fig. 8.8 Switching Time - IC
Fig. 8.9 Safe Operating Area
(Guaranteed Maximum)
Fig. 8.10 Reverse Bias SOA
(Guaranteed Maximum)
Fig. 8.11 rth(j-c) - tw
(Guaranteed Maximum)
Fig. 8.12 IF - VF
The above characteristics curves are presented for reference only and not guaranteed by production test.
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GT40RR21
Package Dimensions
Unit: mm
Weight: 4.6 g (typ.)
Package Name(s)
TOSHIBA: 2-16C1S
Nickname: TO-3P(N)
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GT40RR21
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively "Product") without notice.
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written permission, reproduction is permissible only if reproduction is without alteration/omission.
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the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA
information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the
precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application
with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications,
including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating
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AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
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