ISSUED DATE :2006/09/13 REVISED DATE : GTC220E BVDSS RDS(ON) ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 20V 30m 5A Description The GTC220E provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. Features *Low on-resistance *Capable of 2.5V gate drive *Low drive current *Surface mount package Package Dimensions REF. Millimeter Min. Max. A - 1.20 A1 b c 0.05 0.15 0.19 0.30 0.09 D 2.90 REF. Millimeter Min. Max. E 6.20 6.60 4.30 4.50 0.20 E1 e L 0.45 0.75 3.10 S 0° 8° 0.65 BSC Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Ratings Unit VDS 20 V VGS ±12 V 3 ID @Ta=25 5.0 A 3 ID @Ta=70 4.0 A 20 A 1 W Continuous Drain Current , VGS@10V Continuous Drain Current , VGS@10V Pulsed Drain Current Symbol 1,2 IDM Total Power Dissipation PD @Ta=25 Linear Derating Factor 0.008 Operating Junction and Storage Temperature Range Tj, Tstg -55 ~ +150 Symbol Value Rthj-a 125 W/ Thermal Data Parameter Thermal Resistance Junction-ambient GTC220E Max. Unit /W Page: 1/4 ISSUED DATE :2006/09/13 REVISED DATE : Electrical Characteristics (Tj = 25 Parameter unless otherwise specified) Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS 20 - - V Breakdown Voltage Temperature Coefficient BVDSS / Tj - 0.1 - Gate Threshold Voltage VGS(th) 0.5 - - V VDS=VGS, ID=250uA gfs - 9.7 - S VDS=10V, ID=4.6A IGSS - - ±10 uA VGS= ±12V - - 1 uA VDS=20V, VGS=0 - - 25 uA VDS=20V, VGS=0 - - 30 - - 40 Qg - 12.5 - Gate-Source Charge Qgs - 1 - Gate-Drain (“Miller”) Change Qgd - 6.5 - Td(on) - 5 - Tr - 9 - Td(off) - 26.2 - Tf - 6.8 - Input Capacitance Ciss - 355 - Output Capacitance Coss - 190 - Reverse Transfer Capacitance Crss - 85 - Symbol Min. Typ. Max. Unit VSD - - 1.2 V IS=1.25, VGS=0V, Tj=25 IS - - 1.25 A VD= VG=0V, VS=1.2V ISM - - 20 A Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=70 ) Static Drain-Source On-Resistance IDSS RDS(ON) 2 Total Gate Charge Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time V/ m Test Conditions VGS=0, ID=250uA Reference to 25 , ID=1mA VGS=4.5V, ID=5A VGS=2.5V, ID=3A nC ID=4.6A VDS=20V VGS=5V Ns VDS=10V ID=1A VGS=5V RG=3.3 RD=10 pF VGS=0V VDS=20V f=1.0MHz Source-Drain Diode Parameter Forward On Voltage2 Continuous Source Current(Body Diode) Continuous Source Current(Body Diode) 1 Test Conditions Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on FR4 board, t GTC220E 10sec. Page: 2/4 ISSUED DATE :2006/09/13 REVISED DATE : Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature GTC220E Page: 3/4 ISSUED DATE :2006/09/13 REVISED DATE : Fig 7. Gate Charge Characteristics Fig 9. Maximum Safe Operating Area Fig 11. Switching Time Waveform Fig 8. Typical Capacitance Characteristics Fig 10. Effective Transient Thermal Impedance Fig 12. Gate Charge Waveform Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GTC220E Page: 4/4