H11G1, H11G2, H11G3 H11G1X HIGH VOLTAGE DARLINGTON OUTPUT OPTICALLY COUPLED ISOLATOR APPROVALS UL recognised, File No. E91231 Package Code " JJ " 'X' SPECIFICATIONAPPROVALS H11G1X VDE 0884 in 3 available lead form : - STD - G form - SMD approved to CECC 00802 Dimensions in mm 2.54 7.0 6.0 1.2 7.62 6.62 1 6 2 5 3 4 7.62 4.0 3.0 DESCRIPTION The H11G_ series are optically coupled isolators 0.5 consisting of an infrared light emitting diode and a 3.0 0.26 high voltage NPN silicon photo darlington which 3.35 0.5 has an integral base-emitter resistor to optimise switching speed and elevated temperature ABSOLUTEMAXIMUMRATINGS characteristics in a standard 6pin dual in line plastic (25°C unless otherwise specified) package. FEATURES Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. High Isolation Voltage (5.3kVRMS ,7.5kVPK ) High Current Transfer Ratio ( 1000% min) High BVCEO (H11G1 - 100V min.) Low collector dark current :100nA max. at 80V VCE Low input current 1mA IF APPLICATIONS Modems Copiers, facsimiles Numerical control machines Signal transmission between systems of different potentials and impedances OPTION G OPTION SM 7.62 SURFACE MOUNT 0.6 0.1 10.46 9.86 13° Max Storage Temperature -40°C to + 125°C Operating Temperature -25°C to + 100°C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260°C INPUTDIODE Forward Current Reverse Voltage Power Dissipation 50mA 6V 70mW OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO H11G3,H11G2,H11G1 Collector-base Voltage BVCBO H11G3,H11G2,H11G1 Emitter-baseVoltage BVEBO Collector Current Power Dissipation 55,80,100V 55,80,100V 6V 150mA 300mW POWER DISSIPATION 1.25 0.75 0.26 Total Power Dissipation 350mW 10.16 ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, TS25 1UD England Tel: (01429)863609 Fax : (01429) 863581 e-mail [email protected] 28/11/08 DB92008 ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted ) PARAMETER Input MIN TYP MAX UNITS Forward Voltage (VF) 1.2 1.5 V IF = 10mA 10 μA VR = 4V 100 80 55 V V V IC = 1mA IC = 1mA IC = 1mA 100 80 55 6 V V V V IC = 100μA IC = 100μA IC = 100μA IE = 0.1mA nA nA nA VCE = 80V VCE = 60V VCE = 30V mA mA mA 10mA IF , 1.2V VCE 1mA IF , 5V VCE 1mA IF , 5V VCE 1011 0.6 V V V VRMS VPK Ω pF 1mA IF , 1mA IC 16mA IF , 50mA IC 20mA IF , 50mA IC See note 1 See note 1 VIO = 500V (note 1) V = 0, f =1MHz 100 20 μs μs IC= 20mA, VCE = 2V, RL = 100Ω Reverse Current (IR) Output Coupled Collector-emitter Breakdown (BVCEO ) H11G1 H11G2 H11G3 Collector-base Breakdown (BVCBO ) H11G1 H11G2 H11G3 Emitter-base Breakdown (BVEBO ) Collector-emitter Dark Current (ICEO ) H11G1 H11G2 H11G3 100 100 100 Collector Output Current ( IC ) H11G1, H11G2 H11G1, H11G2 H11G3 Collector-emitter SaturationVoltage VCE(SAT) H11G1, H11G2 H11G1, H11G2 H11G3 Input to Output Isolation Voltage VISO Input-output Isolation Resistance RISO Input-output Capacitance Cf 100 5 2 1.0 1.2 1.2 5300 7500 5x1010 Response time (Rise), tr Response time (Fall), tf Note 1 Note 2 TEST CONDITION Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory. FIGURE 1 VCC Input IF = 10mA ton toff 100Ω tr Input 28/11/08 Output tf Output 10% 10% 90% 90% DB92008 Collector Power Dissipation vs. Ambient Temperature Normalized Output Current vs. Collector-emitter Voltage 100 200 Normalized output current Collector power dissipation PC (mW) 250 150 100 50 0 50mA 10 10mA 1.0 IF = 1mA Normalized to IF = 1mA (300μs pulse), VCE = 5V 0.1 0.01 -30 0 25 50 75 100 0 125 1 2 Forward Current vs. Ambient Temperature 6 100 Normalized output current 70 60 50 40 30 20 50mA 10 10mA 1.0 IF = 1mA Normalized to IF = 1mA (300μs pulse), VCE = 5V TA = 25 °C 0.1 10 0 0.01 -30 0 25 50 75 100 125 -50 Ambient temperature TA ( °C ) -25 0 25 50 75 Ambient temperature TA ( °C ) Normalized Output Current vs. Input Current Collector Dark Current vs. Ambient Temperature 100 100k 10 1.0 Normalized to IF = 1mA (300μs pulse), VCE = 5V TA = 25 °C 0.1 0.01 0.1 1.0 10 Input current IF (mA) 100 Collector dark current ICEO (nA) 100 Normalized output current 5 Normalized Output Current vs. Ambient Temperature 80 28/11/08 4 Collector-emitter voltage VCE ( V ) Ambient temperature TA ( °C ) Forward current IF (mA) 3 VCE = 80V 10k 1k 50V VCE 100 10 VCE = 10V 1 -30 0 25 50 75 Ambient temperature TA ( °C ) DB92008 100