RENESAS HAT2031T

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Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
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these changes do not constitute any alteration to the contents of the document itself.
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Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
Cautions
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measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or
(iii) prevention against any malfunction or mishap.
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HAT2031T
Silicon N Channel Power MOS FET
High Speed Power Switching
ADE-208-529F (Z)
7th. Edition
Feb. 2001
Features
•
•
•
•
Low on-resistance
Capable of 2.5 V gate drive
Low drive current
High density mounting
Outline
TSSOP–8
87
8
D
1
D
4
G
65
12
34
5
G
S S
2 3
MOS1
S S
6 7
MOS2
1, 8
Drain
2, 3, 6, 7 Source
4, 5
Gate
HAT2031T
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
20
V
Gate to source voltage
VGSS
± 12
V
Drain current
ID
3.5
A
28
A
Drain peak current
I D(pulse)
Body-drain diode reverse drain current
I DR
Note1
3.5
A
Pch
Note2
1
W
Channel dissipation
Pch
NoteÇR
1.5
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
– 55 to + 150
°C
Channel dissipation
Note:
1. PW ≤ 10µs, duty cycle ≤ 1 %
2. 1 Drive Operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s
3. 2 Drive Operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V(BR)DSS
20
—
—
V
I D = 10 mA, VGS = 0
Gate to source breakdown voltage V(BR)GSS
± 12
—
—
V
I G = ± 100 µA, VDS = 0
Gate to source leak current
I GSS
—
—
± 10
µA
VGS = ± 10 V, VDS = 0
Zero gate voltege drain current
I DSS
—
—
1
µA
VDS = 12 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
0.5
—
1.5
V
VDS = 10 V, I D = 1m A
Static drain to source on state
RDS(on)
—
0.054
0.070
Ω
I D = 2 A, VGS = 4 V Note4
resistance
RDS(on)
—
0.074
0.098
Ω
I D = 2 A, VGS = 2.5 V Note4
Forward transfer admittance
|yfs|
4.5
7
—
S
I D = 2 A, VDS = 10 V Note4
Input capacitance
Ciss
—
300
—
pF
VDS = 10 V
Output capacitance
Coss
—
185
—
pF
VGS = 0
Reverse transfer capacitance
Crss
—
90
—
pF
f = 1MHz
Turn-on delay time
t d(on)
—
13
—
ns
VGS = 4 V, ID = 2 A
Rise time
tr
—
75
—
ns
VDD ≅ 10 V
Turn-off delay time
t d(off)
—
60
—
ns
Fall time
tf
—
75
—
ns
Body–drain diode forward voltage
VDF
—
0.85
1.11
V
IF = 3.5 A, VGS = 0 Note4
Body–drain diode reverse
recovery time
t rr
—
35
—
ns
IF = 3.5 A, VGS = 0
diF/ dt = 20 A/µs
Note:
2
4. Pulse test
HAT2031T
Main Characteristics
Power vs. Temperature Derating
100
Drain Current
1.5
ive
Dr
1.0
Op
er
ion
ive
at
0
Dr
er
0.5
Op
1
at
ion
50
100
150
200
Ambient Temperature Ta (°C)
Maximum Safe Operation Area
10 µs
30
I D (A)
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
2
Channel Dissipation
Pch (W)
2.0
100 µs
10
3
1
DC
Op
PW
er
1
=
at
ion
s
10
m
s
(P
W
0.3
m
< Note
10
Operation in
s) 5
0.1 this area is
limited by R DS(on)
0.03
Ta = 25 °C
0.01 1 shot Pulse
0.1 0.3
1
3
10
30
100
Drain to Source Voltage V DS (V)
Note 5 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
Typical Transfer Characteristics
Typical Output Characteristics
10V
5V
4V
3V
Pulse Test
12
2.5 V
8
2.0 V
4
I D (A)
16
20
Drain Current
Drain Current
I D (A)
20
16
–25°C
25°C
Tc = 75°C
12
8
4
V DS = 10 V
Pulse Test
VGS = 1.5 V
0
2
4
6
Drain to Source Voltage
8
10
V DS (V)
0
1
2
3
Gate to Source Voltage
5
4
V GS (V)
3
HAT2031T
Static Drain to Source on State Resistance
vs. Drain Current
0.16
0.12
ID=2A
0.08
1A
0.04
Static Drain to Source on State Resistance
R DS(on) (Ω )
0.5 A
0.2
Pulse Test
0.1
0.05
2.5 V
VGS = 4 V
0.02
0.01
0.005
0.002
0
4
Pulse Test
Drain to Source On State Resistance
R DS(on) ( Ω)
0.2
2
4
6
Gate to Source Voltage
8
10
Static Drain to Source on State Resistance
vs. Temperature
0.2
0.16
I D = 2, 1, 0.5 A
0.12
VGS = 2.5 V
0.08
2, 1, 0.5 A
0.04
4V
Pulse Test
0
–40
0.2
V GS (V)
0
40
80
120
160
Case Temperature Tc (°C)
0.5
1
2
Drain Current
5
10
I D (A)
20
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
Drain to Source Voltage
V DS(on) (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
50
20
Tc = –25 °C
10
5
75 °C
25 °C
2
1
0.5
0.2
V DS = 10 V
Pulse Test
0.5 1
2
5
10
Drain Current I D (A)
20
HAT2031T
Body–Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
10000
200
Capacitance C (pF)
Reverse Recovery Time trr (ns)
500
100
50
20
10
5
0.1
3000
1000
5
Ciss
300
Coss
100
Crss
30
di/dt = 20 A/µs
V GS = 0, Ta = 25°C
0.2
0.5
1
2
Reverse Drain Current
VGS = 0
f = 1 MHz
10
0
10
10
20
30
40
50
Drain to Source Voltage VDS
DS (V)
I DR (A)
Switching Characteristics
40
8
V DD = 5 V
10 V
20 V
30
6
V GS
20
10
0
V DS
4
V DD = 20 V
10 V
5V
2
4
6
8
Gate Charge Qg (nc)
2
0
10
1000
Switching Time t (ns)
I D = 3.5 A
Gate to Source Voltage
V DS (V)
Drain to Source Voltage
10
V GS (V)
Dynamic Input Characteristics
50
500
V GS = 4 V, V DD = 10 V
PW = 5 µs, duty < 1 %
200
100
tf
50
tr
20
10
0.1
t d(off)
t d(on)
0.2
0.5
1
Drain Current
2
5
10
I D (A)
5
HAT2031T
Reverse Drain Current vs.
Souece to Drain Voltage
20
Reverse Drain Current I DR (A)
Pulse Test
16
12
8
5V
V GS = 0 V
4
0
0.4
0.8
1.2
1.6
Source to Drain Voltage
Switching Time Test Circuit
2.0
V SD (V)
Switching Time Waveform
Vout
Monitor
Vin Monitor
90%
D.U.T.
RL
Vin
Vin
4V
50Ω
V DD
= 10 V
Vout
10%
10%
90%
td(on)
6
tr
10%
90%
td(off)
tf
HAT2031T
Normalized Transient Thermal Impedance vs. Pulse Width ( 1 Drive Operation)
Normalized Transient Thermal Impedance
γ s (t)
10
1
D=1
0.5
0.1
0.2
0.1
0.05
0.01
θ ch – f(t) = γ s (t) • θ ch – f
θ ch – f = 166 °C/W, Ta = 25 °C
When using the glass epoxy board
(FR4 40x40x1.6 mm)
0.02
0.01
lse
u
tp
0.001
PDM
o
sh
D=
1
PW
T
PW
T
0.0001
10 µ
100 µ
1m
10 m
100 m
1
10
100
1000
10000
Pulse Width PW (S)
Normalized Transient Thermal Impedance vs. Pulse Width ( 2 Drive Operation)
Normalized Transient Thermal Impedance
γ s (t)
10
1
D=1
0.5
0.1
0.01
0.2
0.1
0.05
θ ch – f(t) = γ s (t) • θ ch – f
θ ch – f = 210 °C/W, Ta = 25 °C
When using the glass epoxy board
(FR4 40x40x1.6 mm)
0.02
0.01
0.001
0.0001
10 µ
ot
PDM
e
uls
D=
p
h
1s
100 µ
PW
T
PW
T
1m
10 m
100 m
1
10
Pulse Width PW (S)
100
1000
10000
7
HAT2031T
8
HAT2031T
Package Dimensions
As of January, 2001
Unit: mm
4.40
3.00
3.30 Max
8
5
1
4
0.65
0.20 ± 0.06
1.0
0.13 M
6.40 ± 0.20
0.10
*Dimension including the plating thickness
Base material dimension
*0.17 ± 0.05
0.15 ± 0.04
1.10 Max
0.805 Max
0.07 +0.03
–0.04
*0.22 +0.08
–0.07
0° – 8° 0.50 ± 0.10
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
TTP-8D
—
—
—
9
HAT2031T
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
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Japan
:
:
:
:
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http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
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(America) Inc.
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Copyright  Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
Colophon 2.0
10