HI-SINCERITY Spec. No. : HD200201 Issued Date : 2001.04.01 Revised Date : 2005.08.16 Page No. : 1/4 MICROELECTRONICS CORP. HBD437D COMPLEMENTARY SILICON POWER TRANSISTORS Description The HBD437D is silison epitaxial-base NPN power transistor in TO-126ML plastic package, intented for use in medium power linear and switching applications. The complementary PNP type is HBD438D. TO-126ML Absolute Maximum Ratings (TA=25°C) Symbol Parametor Value Unit VCBO Collector-Base Voltage (IE=0) 45 V VCES Collector-Emitter Voltage (VBE=0) 45 V VCEO Collector-Emitter Voltage (IB=0) 45 V VEBO Emitter-Base Voltage (IC=0) 5 V IC Collector Current 4 A ICM Collector Peak Current (t≤10ms) 7 A IB Base Current 1 A PD Total Dissipation at TC=25°C 20 W TA=25°C 1.5 W Tstg Storage Temperature -55 to 150 °C TJ Max. Operating Junction Temperature 150 °C Thermal Data Rthj-case Thermal Resistance Junction-case Max. 5 °C/W Rthj-amb Thermal Resistance Junction-ambient Max. 83 °C/W Electrical Characteristics (TA=25°C, unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICBO Collector Cut-off Current (IE=0) VCB=45V - - 100 uA ICES Collector Cut-off Current (VBE=0) VCE=45V - - 100 uA IEBO Emitter Cut-off Current (IC=0) VEB=5V - - 1 mA *VCEO(sus) Collector-Emitter Sustaining Voltage IC=100mA, IB=0 45 - - V *VCE(sat) Collector-Emitter Saturation Voltage IC=2A, IB=0.2A - 0.4 0.6 V IC=10mA,VCE=5V - 0.58 - V IC=2A, VCE=1V - - 1.2 V IC=10mA, VCE=5V 30 130 - IC=0.5A, VCE=1V 85 140 - IC=2A, VCE=1V 40 - - *VBE *hFE *hFE1/hFE2 fT Base-Emitter Voltage DC Current Gain Matched Pair IC=0.5A, VCE=1V - - 1.4 Transition Frequency IC=0.25A, VCE=1V 3 - - MHz *Pulse Test: Pulse Width ≤380us, Duty Cycle≤2% HBD437D HSMC Product Specification HI-SINCERITY Spec. No. : HD200201 Issued Date : 2001.04.01 Revised Date : 2005.08.16 Page No. : 2/4 MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current Current Gain & Collector Current 1000 1000 o o 125 C o 75 C 125 C o 75 C o 25 C o hFE hFE 25 C 100 100 hFE @ VCE=1V hFE @ VCE=5V 10 10 1 10 100 1000 10000 1 10 Collector Current IC (mA) 1000 10000 On Voltage & Collector Current Saturation Voltage & Collector Current 1000 10000 VBE(on) @ VCE=1V On Voltage (mV) VCE(s at) @ IC=10IB Saturation Voltage (mV) 100 Collector Current IC (mA) o 75 C 100 o 25 C o 75 C 1000 o 25 C o 125 C o 125 C 10 100 1 10 100 1000 10000 Collector Current IC (mA) 1 10 100 1000 10000 Collector Current IC (mA) Safe Operating Area Collector Current-IC (A) 10 1 0.1 1ms 100ms 1s 0.01 1 10 100 Forward Voltage-VCE (V) HBD437D HSMC Product Specification HI-SINCERITY Spec. No. : HD200201 Issued Date : 2001.04.01 Revised Date : 2005.08.16 Page No. : 3/4 MICROELECTRONICS CORP. TO-126ML Dimension A C DIM A B C D E F G H I J K L M N Marking: L Pb Free Mark D H 437 E D Pb-Free: " . " (Note) Normal: None I Date Code B 1 2 Control Code Note: Green label is used for pb-free packing 3 Pin Style: 1.Emitter 2.Collector 3.Base F H Material: • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 M G K J N Min. 7.74 10.87 0.88 1.28 3.50 2.61 13 1.18 2.88 0.68 3.44 1.88 0.50 Max. 8.24 11.37 1.12 1.52 3.75 3.37 1.42 3.12 0.84 2.30 3.70 2.14 0.51 *: Typical, Unit: mm 3-Lead TO-126ML Plastic Package HSMC Package Code: D Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. • HSMC reserves the right to make changes to its products without notice. • HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: • Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 • Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HBD437D HSMC Product Specification HI-SINCERITY Spec. No. : HD200201 Issued Date : 2001.04.01 Revised Date : 2005.08.16 Page No. : 4/4 MICROELECTRONICS CORP. Soldering Methods for HSMC’s Products 1. Storage environment: Temperature=10oC~35oC Humidity=65%±15% 2. Reflow soldering of surface-mount devices Figure 1: Temperature profile tP Critical Zone TL to TP TP Ramp-up TL tL Temperature Tsmax Tsmin tS Preheat Ramp-down 25 t 25oC to Peak Time Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly <3 C/sec <3oC/sec - Temperature Min (Tsmin) 100oC 150oC - Temperature Max (Tsmax) 150oC 200oC 60~120 sec 60~180 sec <3oC/sec <3oC/sec 183oC 217oC Average ramp-up rate (TL to TP) o Preheat - Time (min to max) (ts) Tsmax to TL - Ramp-up Rate Time maintained above: - Temperature (TL) - Time (tL) 60~150 sec Peak Temperature (TP) Time within 5oC of actual Peak Temperature (tP) Ramp-down Rate Time 25oC to Peak Temperature o o 60~150 sec 240 C +0/-5 C 260oC +0/-5oC 10~30 sec 20~40 sec <6oC/sec <6oC/sec <6 minutes <8 minutes Peak temperature Dipping time 245 C ±5 C 5sec ±1sec 3. Flow (wave) soldering (solder dipping) Products Pb devices. Pb-Free devices. HBD437D o o o o 260 C +0/-5 C 5sec ±1sec HSMC Product Specification