STMICROELECTRONICS HCF4011M013TR

HCF4011B
QUAD 2 INPUT NAND GATE
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PROPAGATION DELAY TIME
tPD = 60ns (Typ.) at VDD = 10V
BUFFERED INPUTS AND OUTPUTS
STANDARDIZED SYMMETRICAL OUTPUT
CHARACTERISTICS
QUIESCENT CURRENT SPECIFIED UP TO
20V
5V, 10V AND 15V PARAMETRIC RATINGS
INPUT LEAKAGE CURRENT
II = 100nA (MAX) AT VDD = 18V TA = 25°C
100% TESTED FOR QUIESCENT CURRENT
MEETS ALL REQUIREMENTS OF JEDEC
JESD13B " STANDARD SPECIFICATIONS
FOR DESCRIPTION OF B SERIES CMOS
DEVICES"
DESCRIPTION
The HCF4011B is a monolithic integrated circuit
fabricated in Metal Oxide Semiconductor
technology available in DIP and SOP packages.
The HCF4011B QUAD 2 INPUT NAND GATE
provides the system designer with direct
DIP
SOP
ORDER CODES
PACKAGE
TUBE
T&R
DIP
SOP
HCF4011BEY
HCF4011BM1
HCF4011M013TR
implementation of the NAND function and
supplement the existing family of CMOS gates. All
inputs and outputs are buffered.
PIN CONNECTION
September 2001
1/7
HCF4011B
INPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION
PIN No
SYMBOL
NAME AND FUNCTION
1, 2, 5, 6, 8, A, B, C, D, E,
Data Inputs
9, 12, 13
F, G, H
3, 4, 10, 11
J, K, L, M Data Outputs
VSS
Negative Supply Voltage
7
VDD
14
Positive Supply Voltage
TRUTH TABLE
INPUTS
LOGIC DIAGRAM
OUTPUTS
A, C, E, G
B, D, F, H
J, K, L, M
L
L
H
H
L
H
L
H
H
H
H
L
ABSOLUTE MAXIMUM RATINGS
Symbol
VDD
Parameter
Supply Voltage
VI
DC Input Voltage
II
DC Input Current
PD
Value
Unit
-0.5 to +22
V
-0.5 to VDD + 0.5
± 10
V
mA
200
100
mW
mW
Top
Power Dissipation per Package
Power Dissipation per Output Transistor
Operating Temperature
-55 to +125
°C
Tstg
Storage Temperature
-65 to +150
°C
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
All voltage values are referred to VSS pin voltage.
RECOMMENDED OPERATING CONDITIONS
Symbol
VDD
2/7
Parameter
Supply Voltage
VI
Input Voltage
Top
Operating Temperature
Value
Unit
3 to 20
V
0 to VDD
V
-55 to 125
°C
HCF4011B
DC SPECIFICATIONS
Test Condition
Symbol
IL
VOH
VOL
VIH
VIL
IOH
IOL
II
CI
Parameter
Quiescent Current
High Level Output
Voltage
Low Level Output
Voltage
VI
(V)
Low Level Input
Voltage
Output Sink
Current
Input Leakage
Current
Input Capacitance
|IO| VDD
(µA) (V)
0/5
0/10
0/15
0/20
0/5
0/10
0/15
5/0
10/0
15/0
High Level Input
Voltage
Output Drive
Current
VO
(V)
0/5
0/5
0/10
0/15
0/5
0/10
0/15
0/18
Value
0.5/4.5
1/9
1.5/13.5
4.5/0.5
9/1
13.5/1.5
2.5
4.6
9.5
13.5
0.4
0.5
1.5
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
Any Input
Any Input
5
10
15
20
5
10
15
5
10
15
5
10
15
5
10
15
5
5
10
15
5
10
15
18
TA = 25°C
Min.
Typ.
Max.
0.01
0.01
0.01
0.02
0.25
0.5
1
5
4.95
9.95
14.95
-40 to 85°C
-55 to 125°C
Min.
Min.
7.5
15
30
150
4.95
9.95
14.95
0.05
0.05
0.05
4.95
9.95
14.95
3.5
7
11
1.5
3
4
-3.2
-1
-2.6
-6.8
1
2.6
6.8
±0.1
5
7.5
0.05
0.05
0.05
1.5
3
4
V
V
1.5
3
4
-1.1
-0.36
-0.9
-2.4
0.36
0.9
2.4
±1
µA
V
3.5
7
11
-1.15
-0.36
-0.9
-2.4
0.36
0.9
2.4
±10-5
Max.
7.5
15
30
150
0.05
0.05
0.05
3.5
7
11
-1.36
-0.44
-1.1
-3.0
0.44
1.1
3.0
Max.
Unit
V
mA
mA
±1
µA
pF
The Noise Margin for both "1" and "0" level is: 1V min. with VDD =5V, 2V min. with VDD=10V, 2.5V min. with VDD=15V
DYNAMIC ELECTRICAL CHARACTERISTICS (Tamb = 25°C, CL = 50pF, RL = 200KΩ, tr = tf = 20 ns)
Test Condition
Symbol
Value (*)
Unit
Parameter
VDD (V)
tPLH tPHL Propagation Delay Time
tTLH tTHL Output Transition Time
5
10
15
5
10
15
Min.
Typ.
Max.
125
60
45
100
50
40
250
120
90
200
100
80
ns
ns
(*) Typical temperature coefficient for all VDD value is 0.3 %/°C.
3/7
HCF4011B
TEST CIRCUIT
CL = 50pF or equivalent (includes jig and probe capacitance)
RL = 200KΩ
RT = ZOUT of pulse generator (typically 50Ω)
WAVEFORM : PROPAGATION DELAY TIMES (f=1MHz; 50% duty cycle)
4/7
HCF4011B
Plastic DIP-14 MECHANICAL DATA
mm.
inch
DIM.
MIN.
a1
0.51
B
1.39
TYP
MAX.
MIN.
TYP.
MAX.
0.020
1.65
0.055
0.065
b
0.5
0.020
b1
0.25
0.010
D
20
0.787
E
8.5
0.335
e
2.54
0.100
e3
15.24
0.600
F
7.1
0.280
I
5.1
0.201
L
Z
3.3
1.27
0.130
2.54
0.050
0.100
P001A
5/7
HCF4011B
SO-14 MECHANICAL DATA
DIM.
mm.
MIN.
TYP
A
a1
inch
MAX.
MIN.
TYP.
1.75
0.1
0.068
0.2
a2
MAX.
0.003
0.007
1.65
0.064
b
0.35
0.46
0.013
0.018
b1
0.19
0.25
0.007
0.010
C
0.5
0.019
c1
45° (typ.)
D
8.55
8.75
0.336
0.344
E
5.8
6.2
0.228
0.244
e
1.27
0.050
e3
7.62
0.300
F
3.8
4.0
0.149
0.157
G
4.6
5.3
0.181
0.208
L
0.5
1.27
0.019
0.050
M
S
0.68
0.026
8° (max.)
PO13G
6/7
HCF4011B
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
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