HMC455LP3 / 455LP3E v02.0605 AMPLIFIERS - SMT 5 InGaP HBT ½ Watt High IP3 AMPLIFIER, 1.7 - 2.5 GHz Typical Applications Features This amplifier is ideal for high linearity applications: Output IP3: +42 dBm • Multi-Carrier Systems Gain: 13 dB • GSM, GPRS & EDGE 56% PAE @ +28 dBm Pout • CDMA & WCDMA +19 dBm W-CDMA Channel Power @ -45 dBc ACP • PHS 3x3 mm QFN SMT Package Functional Diagram General Description The HMC455LP3 & HMC455LP3E are high output IP3 GaAs InGaP Heterojunction Bipolar Transistor (HBT) ½ watt MMIC amplifiers operating between 1.7 and 2.5 GHz. Utilizing a minimum number of external components the amplifier provides 13 dB of gain and +28 dBm of saturated power at 56% PAE from a single +5 Vdc supply voltage. The high output IP3 of +42 dBm coupled with the low VSWR of 1.4:1 make the HMC455LP3 & HMC455LP3E ideal driver amplifiers for PCS/3G wireless infrastructures. A low cost, leadless 3x3 mm QFN surface mount package (LP3) houses the linear amplifier. The LP3 provides an exposed base for excellent RF and thermal performance. Electrical Specifications, TA = +25° C, Vs= +5V Parameter Min. Frequency Range Gain 11.5 Gain Variation Over Temperature Max. Min. 13.5 0.012 Typ. Max. Min. 1.9 - 2.2 10.5 0.02 13 0.012 Typ. Max. 2.2 - 2.5 9 0.02 GHz 11.5 0.012 Units dB 0.02 dB / °C Input Return Loss 13 15 10 Output Return Loss 10 18 15 dB 23 26 dBm 27 dBm 37 40 dBm Output Power for 1dB Compression (P1dB) 24 Saturated Output Power (Psat) Output Third Order Intercept (IP3) Noise Figure Supply Current (Icq) 5 - 352 Typ. 1.7 - 1.9 27 24.5 28.5 37 40 27.5 28 39 42 dB 7 6 6 dB 150 150 150 mA For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC455LP3 / 455LP3E v02.0605 InGaP HBT ½ Watt High IP3 AMPLIFIER, 1.7 - 2.5 GHz 15 10 S21 S11 S22 0 GAIN (dB) RESPONSE (dB) 5 -5 -10 -15 -20 -25 1 1.5 2 2.5 3 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 1.5 +25C +85C -40C 1.6 1.7 1.8 FREQUENCY (GHz) 2.2 2.3 2.4 2.5 +25C +85C -40C -5 +25C +85C -40C RETURN LOSS (dB) RETURN LOSS (dB) 2.1 0 -5 -10 -15 -20 -10 -15 -20 -25 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 2.4 -30 1.5 2.5 1.6 1.7 1.8 FREQUENCY (GHz) 29 28 28 27 27 Psat (dBm) 30 29 26 +25C +85C -40C 24 23 24 21 2.1 2.3 2.4 2.5 2.2 FREQUENCY (GHz) +25C +85C -40C 23 22 2 2.2 25 21 1.9 2.1 26 22 1.8 2 Psat vs. Temperature 30 25 1.9 FREQUENCY (GHz) P1dB vs. Temperature P1dB (dBm) 2 Output Return Loss vs. Temperature 0 20 1.7 1.9 FREQUENCY (GHz) Input Return Loss vs. Temperature -25 1.5 5 Gain vs. Temperature AMPLIFIERS - SMT Broadband Gain & Return Loss 2.3 2.4 2.5 20 1.7 1.8 1.9 2 2.1 2.2 2.3 2.4 2.5 FREQUENCY (GHz) Data shown is tuned for 1.85 - 2.2 GHz, contact HMC Applications for recommended 1.7 - 1.85 GHz & 2.2 - 2.5 GHz tuning circuits. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 353 HMC455LP3 / 455LP3E v02.0605 InGaP HBT ½ Watt High IP3 AMPLIFIER, 1.7 - 2.5 GHz Output IP3 vs. Temperature 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 1.7 Noise Figure vs. Temperature 10 9 8 NOISE FIGURE (dB) OIP3 (dBm) AMPLIFIERS - SMT 5 +25C +85C -40C 7 6 5 4 +25C 3 +85C 2 -40C 1 1.8 1.9 2 2.1 2.2 2.3 2.4 0 1.7 2.5 1.8 1.9 FREQUENCY (GHz) Pout Gain PAE 0 2 4 6 8 10 12 14 16 18 20 60 56 52 48 44 40 36 32 28 24 20 16 12 8 4 0 -10 -8 -6 -4 -2 INPUT POWER (dBm) -20 -25 1.6 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) 2.2 2.3 2.4 2.5 Gain (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) ISOLATION (dB) +25C +85C -40C -15 -30 1.5 2.3 2.5 Pout Gain PAE 0 2 4 6 8 10 12 14 16 18 20 44 40 36 32 28 24 Gain P1dB Psat OIP3 20 16 12 8 4.5 4.7 5 5.2 Vs (Vdc) Data shown is tuned for 1.85 - 2.2 GHz, contact HMC Applications for recommended 1.7 - 1.85 GHz & 2.2 - 2.5 GHz tuning circuits. 5 - 354 2.4 Gain, Power & IP3 vs. Supply Voltage @ 1.95 GHz 0 -10 2.2 INPUT POWER (dBm) Reverse Isolation vs. Temperature -5 2.1 Power Compression @ 2.15 GHz Pout (dBm), GAIN (dB), PAE (%) Pout (dBm), GAIN (dB), PAE (%) Power Compression @ 1.95 GHz 60 56 52 48 44 40 36 32 28 24 20 16 12 8 4 0 -10 -8 -6 -4 -2 2 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5.5 HMC455LP3 / 455LP3E v02.0605 InGaP HBT ½ Watt High IP3 AMPLIFIER, 1.7 - 2.5 GHz ACPR vs. Supply Voltage @ 1.96 GHz CDMA 2000, 9 Channels Forward 5 ACPR vs. Supply Voltage @ 2.14 GHz W-CDMA, 64 DPCH -40 -35 CDMA2000 Rev. 8 Frequency: 1.96 GHz Integration BW: 1.228 MHz Forward Link, SR1, 9 Channels -50 WCDMA Frequency : 2.14 GHz Integration BW: 3.84 MHz 64 DPCH -40 4.5V 5V 5.5V -55 ACPR (dBc) ACPR (dBc) -45 -45 4.5V 5V 5.5V -50 -55 -60 -60 Source ACPR Source ACPR -65 -65 5 7 9 11 13 15 17 19 21 Channel Output Power (dBm) Absolute Maximum Ratings Collector Bias Voltage (Vcc) +6.0 Vdc RF Input Power (RFin)(Vs = +5.0 Vdc) +25 dBm Junction Temperature 150 °C Continuous Pdiss (T = 85 °C) (derate 16 mW/°C above 85 °C) 1.04 W Thermal Resistance (junction to ground paddle) 63 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C 5 7 9 11 13 15 17 19 21 Channel Output Power (dBm) AMPLIFIERS - SMT -30 Data shown is tuned for 1.85 - 2.2 GHz, contact HMC Applications for recommended 1.7 - 1.85 GHz & 2.2 - 2.5 GHz tuning circuits. ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 355 HMC455LP3 / 455LP3E v02.0605 Outline Drawing AMPLIFIERS - SMT 5 InGaP HBT ½ Watt High IP3 AMPLIFIER, 1.7 - 2.5 GHz NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Package Information Part Number Package Body Material Lead Finish MSL Rating HMC455LP3 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 HMC455LP3E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 Package Marking [3] [1] 455 XXXX [2] 455 XXXX [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX 5 - 356 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC455LP3 / 455LP3E v02.0605 InGaP HBT ½ Watt High IP3 AMPLIFIER, 1.7 - 2.5 GHz Pin Number Function Description 1, 2, 4 - 9, 11 - 16 N/C This pin may be connected to RF ground. 3 RFIN This pin is AC coupled. An off chip series matching capacitor is required. 10 RFOUT RF output and DC Bias for the output stage. GND Package bottom must be connected to RF/DC ground. Interface Schematic AMPLIFIERS - SMT 5 Pin Descriptions Application Circuit TL1 TL2 TL3 TL4 50 Ohm 50 Ohm 50 Ohm 50 Ohm Physical Length 0.33” 0.18” 0.13” Electrical Length 34° 19° 13.5° Impedance PCB Material: 10 mil Rogers 4350, Er = 3.48 Recommended Component Values L1 8.2 nH 0.04” C1 2.2 μF 4° C2, C3 3.0 pF C4 0.9 pF C5 100 pF Data shown is tuned for 1.85 - 2.2 GHz, contact HMC Applications for recommended 1.7 - 1.85 GHz & 2.2 - 2.5 GHz tuning circuits. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 357 HMC455LP3 / 455LP3E v02.0605 Evaluation PCB AMPLIFIERS - SMT 5 InGaP HBT ½ Watt High IP3 AMPLIFIER, 1.7 - 2.5 GHz J3 Pin Number Description 1, 2, 3 GND 4, 5, 6 Vs List of Materials for Evaluation PCB 106058 Item Description J1 - J2 PCB Mount SMA Connector J3 2 mm DC Header C1 2.2 μF Capacitor, Tantalum C2, C3 3.0 pF Capacitor, 0402 Pkg. C4 0.9 pF Capacitor, 0402 Pkg. C5 100 pF Capacitor, 0402 Pkg. L1 8.2 nH Inductor, 0402 Pkg. U1 HMC455LP3 / HMC455LP3E Power Amplifier PCB [2] 106492 Evaluation PCB, 10 mils [1] The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. [1] Reference this number when ordering complete evalution PCB [2] Circuit Board Material: Rogers 4350, Er = 3.48 Data shown is tuned for 1.85 - 2.2 GHz, contact HMC Applications for recommended 1.7 - 1.85 GHz & 2.2 - 2.5 GHz tuning circuits. 5 - 358 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC455LP3 / 455LP3E v02.0605 InGaP HBT ½ Watt High IP3 AMPLIFIER, 1.7 - 2.5 GHz 5 AMPLIFIERS - SMT Notes: For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 359