HITTITE HMC817LP4E_10

HMC817LP4E
v00.1108
Amplifiers - Low Noise - SMT
7
SMT GaAs pHEMT DUAL CHANNEL
LOW NOISE AMPLIFIER, 550 - 1200 MHz
Typical Applications
Features
The HMC817LP4E is ideal for:
Noise Figure: 0.5 dB
• Cellular/3G and LTE/WiMAX/4G
Gain: 16 dB
• BTS & Infrastructure
Output IP3: +37 dBm
• Repeaters and Femtocells
Single Supply: +3V to +5V
• Multi-Channel Applications
50 Ohm Matched Input/Output
• Access Points
24 Lead 4x4mm QFN Package: 16 mm2
Functional Diagram
General Description
The HMC817LP4E is a GaAs pHEMT Dual Channel Low Noise Amplifier that is ideal for Cellular/3G
and LTE/WiMAX/4G basestation front-end receivers
operating between 550 and 1200 MHz. The amplifier
has been optimized to provide 0.5 dB noise figure,
24 dB gain and +37 dBm output IP3 from a single
supply of +5V. Input and output return losses are
excellent with minimal external matching and bias
decoupling components. The HMC817LP4E shares
the same package and pinout with the HMC816LP4E
and HMC818LP4E LNAs. The HMC817LP4E can be
biased with +3V to +5V and features an externally
adjustable supply current which allows the designer
to tailor the linearity performance of each channel of
the LNA for each application.
Electrical Specifications, TA = +25° C,
Rbias 1, 2 = 10k Ohms* Vdd = Vdd1 = Vdd2 = +5V, Idd = Idd1 = Idd2
Parameter
Vdd = +3 V
Min.
Frequency Range
Gain
Typ.
Max.
Min.
698 - 960
13
Gain Variation Over Temperature
Vdd = +5 V
Typ.
Max.
Min.
550 - 1200
16
11
0.003
Min.
13.5
11.5
MHz
16
dB
0.005
dB/ °C
0.5
28
22
22
17
dB
Output Return Loss
12
14
12
15
dB
21
dBm
16
12.5
16.5
18.5
0.85
Units
Noise Figure
14
0.55
Max.
550 - 1200
16
0.005
1.1
Typ.
Input Return Loss
Output Power for 1 dB
Compression (P1dB)
0.5
Max.
698 - 960
15
0.003
0.8
Typ.
20.5
0.6
16.5
1.1
dB
Saturated Output Power (Psat)
17
17.5
21
21.5
dBm
Output Third Order Intercept (IP3)
31
30
37
37
dBm
Supply Current (Idd)
24
34
44
24
34
44
65
95
124
65
95
124
mA
* Rbias resistor sets current, see application circuit herein
7-1
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC817LP4E
v00.1108
SMT GaAs pHEMT DUAL CHANNEL
LOW NOISE AMPLIFIER, 550 - 1200 MHz
Broadband Gain & Return Loss
7
Gain vs. Temperature [1]
25
20
5
-5
+25C
+85C
- 40C
18
Vdd= 5V
Vdd= 3V
GAIN (dB)
RESPONSE (dB)
15
S22
-15
16
14
-25
12
S11
-35
0.2
10
0.4
0.6
0.8
1
1.2
1.4
FREQUENCY (GHz)
1.6
1.8
0.5
2
Gain vs. Temperature [2]
-5
GAIN (dB)
RETURN LOSS (dB)
+25C
+85C
- 40C
18
16
14
12
1.1
1.2
1.3
+25 C
+85 C
- 40 C
-10
-15
-20
-25
-30
10
-35
0.6
0.7
0.8
0.9
1
FREQUENCY (GHz)
1.1
1.2
1.3
Output Return Loss vs. Temperature [1]
0.5
0
-5
-5
-10
-15
+25 C
+85 C
- 40 C
-20
-25
0.6
0.7
0.8
0.9
1
FREQUENCY (GHz)
1.1
1.2
1.3
Reverse Isolation vs. Temperature [1]
0
ISOLATION (dB)
RETURN LOSS (dB)
0.8
0.9
1
FREQUENCY (GHz)
0
20
+25 C
+85 C
- 40 C
-10
-15
-20
-25
-30
0.5
0.7
Input Return Loss vs. Temperature [1]
22
0.5
0.6
Amplifiers - Low Noise - SMT
22
S21
-30
0.6
0.7
0.8
0.9
1
FREQUENCY (GHz)
1.1
1.2
1.3
0.5
0.6
0.7
0.8
0.9
1
FREQUENCY (GHz)
1.1
1.2
1.3
[1] Vdd = 5V [2] Vdd = 3V
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
7-2
HMC817LP4E
v00.1108
7
SMT GaAs pHEMT DUAL CHANNEL
LOW NOISE AMPLIFIER, 550 - 1200 MHz
Noise Figure vs. Temperature [1]
P1dB vs. Temperature
24
0.8
+85C
0.6
+25 C
0.4
18
Vdd=3V
16
14
+25 C
+85 C
- 40 C
-40C
0.2
12
0
0.5
10
0.6
0.7
0.8
0.9
1
FREQUENCY (GHz)
1.1
1.2
1.3
0.5
Psat vs. Temperature
22
0.7
0.8
0.9
1
FREQUENCY (GHz)
1.1
1.2
1.3
48
Vdd=5V
Vdd=5V
44
+25 C
+85 C
- 40 C
40
18
IP3 (dBm)
20
Vdd=3V
16
14
36
32
28
+25 C
+85 C
-40 C
12
Vdd=3V
24
10
0.5
0.6
Output IP3 vs. Temperature
24
20
0.6
0.7
0.8
0.9
1
FREQUENCY (GHz)
1.1
1.2
0.5
1.3
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
FREQUENCY (GHz)
Output IP3 and Supply Current vs.
Supply Voltage @ 700 MHz
Output IP3 and Supply Current vs.
Supply Voltage @ 900 MHz
40
210
38
180
38
180
36
150
36
150
34
120
34
120
32
90
32
90
30
60
30
60
28
30
28
30
0
26
26
2.7
3.1
3.5
3.9
4.3
4.7
5.1
5.5
VOLTAGE SUPPLY (V)
IP3 (dBm)
210
2.7
3.1
3.5
3.9
4.3
4.7
5.1
0
5.5
VOLTAGE SUPPLY (V)
[1] Measurement reference plane shown on evaluation PCB drawing.
7-3
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
Idd (mA)
40
Idd (mA)
IP3 (dBm)
Vdd=5V
20
P1dB (dBm)
NOISE FIGURE (dB)
22
Vdd= 5V
Vdd= 3V
1
Psat (dBm)
Amplifiers - Low Noise - SMT
1.2
HMC817LP4E
v00.1108
SMT GaAs pHEMT DUAL CHANNEL
LOW NOISE AMPLIFIER, 550 - 1200 MHz
Power Compression @ 700 MHz [1]
40
Pout
Gain
PAE
30
20
10
0
-10
50
Pout
Gain
PAE
40
30
20
10
0
-10
-16 -14 -12 -10
-8
-6
-4
-2
0
2
4
6
-16
-14
-12
INPUT POWER (dBm)
-10
-8
-6
-4
-2
0
2
INPUT POWER (dBm)
Power Compression @ 900 MHz [2]
Power Compression @ 700 MHz [2]
50
60
Pout (dBm), GAIN (dB), PAE (%)
Pout (dBm), GAIN (dB), PAE (%)
Amplifiers - Low Noise - SMT
60
Pout (dBm), GAIN (dB), PAE (%)
Pout (dBm), GAIN (dB), PAE (%)
50
40
Pout
Gain
PAE
30
20
10
0
-10
50
Pout
Gain
PAE
40
30
20
10
0
-10
-16 -14 -12 -10 -8
-6
-4
-2
0
2
4
6
8
-16 -14 -12 -10
INPUT POWER (dBm)
1
24
0.8
22
18
0.4
14
2.7
Noise Figure
3.1
3.5
3.9
4.3
4.7
SUPPLY VOLTAGE (V)
-4
-2
0
2
4
6
5.1
0.2
0
5.5
1
Gain
P1dB
0.8
0.6
20
0.4
18
Noise Figure
0.2
16
14
2.7
3.1
3.5
3.9
4.3
4.7
5.1
NOISE FIGURE (dB)
0.6
NOISE FIGURE (dB)
20
GAIN (dB) & P1dB (dBm)
Gain
P1dB
16
-6
Gain, Power & Noise Figure
vs. Supply Voltage @ 900 MHz
24
22
-8
INPUT POWER (dBm)
Gain, Power & Noise Figure
vs. Supply Voltage @ 700 MHz
GAIN (dB) & P1dB (dBm)
7
Power Compression @ 900 MHz [1]
0
5.5
SUPPLY VOLTAGE (V)
[1] Vdd = 5V [2] Vdd = 3V
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
7-4
HMC817LP4E
v00.1108
7
SMT GaAs pHEMT DUAL CHANNEL
LOW NOISE AMPLIFIER, 550 - 1200 MHz
Cross Channel Isolation [1]
Magnitude Balance [1]
ISOLATION (dB)
AMPLITUDE BALANCE (dB)
1
RFIN1 TO RFOUT2
RFIN2 TO RFOUT1
-10
-20
-30
-40
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
0.5
0
-0.5
-1
0.5
0.6
0.7
FREQUENCY (GHz)
1
0
-1
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
Absolute Maximum Ratings
2
-2
0.5
0.8
FREQUENCY (GHz)
Phase Balance [1]
PHASE BALANCE (degrees)
Amplifiers - Low Noise - SMT
0
0.9
1
1.1
1.2
Drain Bias Voltage (Vdd)
+6V
RF Input Power (RFIN)
(Vdd = +5 Vdc)
+10 dBm
Channel Temperature
150 °C
Continuous Pdiss (T= 85 °C)
(derate 16.67 mW/°C above 85 °C)
1.08 W
Thermal Resistance
(channel to ground paddle)
60 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
1.3
FREQUENCY (GHz)
Typical Supply
Current vs. Vdd (Rbias = 10kΩ)
Vdd (V)
Idd (mA)
2.7
24
3.0
34
3.3
44
4.5
82
5.0
95
5.5
105
Note: Amplifier will operate over full voltage ranges shown above.
Absolute Bias Register for Idd
Range & Recommended Bias Resistor
Vdd (V)
3V
5V
Rbias Ω
Idd (mA)
Min
Max
Recommended
10k
Open
circuit
10k
34
820
58
0
Open
circuit
2k
78
10k
95
With Vdd = 3V Rbias <10k is not recommended and may result in
LNA becoming conditionally unstable.
[1] Vdd = 5V [2] Vdd = 3V
7-5
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC817LP4E
v00.1108
SMT GaAs pHEMT DUAL CHANNEL
LOW NOISE AMPLIFIER, 550 - 1200 MHz
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN.
Amplifiers - Low Noise - SMT
7
Outline Drawing
Package Information
Part Number
Package Body Material
Lead Finish
HMC817LP4E
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
MSL Rating
MSL1
[2]
Package Marking [1]
H817
XXXX
[1] 4-Digit lot number XXXX
[2] Max peak reflow temperature of 260 °C
Pin Descriptions
Pin Number
Function
Description
1, 6
RFIN1, RFIN2
These pins are matched to 50 Ohms.
2, 5, 7, 12,
14, 17, 19, 24
GND
These pins and package bottom must be
connected to RF/DC Ground.
3, 4, 8 - 10,
21 - 23
N/C
No connection required. These pins may be connected
to RF/DC ground without affecting performance.
Interface Schematic
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
7-6
HMC817LP4E
v00.1108
Amplifiers - Low Noise - SMT
7
7-7
SMT GaAs pHEMT DUAL CHANNEL
LOW NOISE AMPLIFIER, 550 - 1200 MHz
Pin Descriptions (Continued)
Pin Number
Function
Description
11, 20
Vdd1,
Vdd2
Power supply voltages for each amplifier. Choke inductor and
bypass capacitors are required. See application circuit.
13, 18
RFOUT1,
RFOUT2
These pins are matched to 50 Ohms.
15, 16
RES1,
RES2
These pins are used to set the DC current of each amplifier
via external biasing resistor. See application circuit.
Interface Schematic
Application Circuit
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC817LP4E
v00.1108
SMT GaAs pHEMT DUAL CHANNEL
LOW NOISE AMPLIFIER, 550 - 1200 MHz
7
Amplifiers - Low Noise - SMT
Evaluation PCB
List of Materials for Evaluation PCB 123193
Item
J1 - J4
Description
PCB Mount SMA RF Connector
J5, J6
2mm Vertical Molex 8 pos Connector
C5, C6
1000 pF Capacitor, 0603 Pkg.
C9, C10
0.47 µF Capacitor, 0603 Pkg..
C11, C12
10 kpF Capacitor, 0402 Pkg.
R1 - R4
0 Ohm Resistor, 0402 Pkg.
R5, R6 (Rbias 1, 2)
10K Resistor, 0402 Pkg.
L1, L2
15 nH Inductor, 0402 Pkg.
L5, L6
18 nH Inductor, 0603 Pkg.
U1
HMC817LP4E Amplifier
PCB [2]
122725 Evaluation PCB
[1]
The circuit board used in this application should use
RF circuit design techniques. Signal lines should
have 50 Ohm impedance while the package ground
leads and exposed paddle should be connected
directly to the ground plane similar to that shown.
A sufficient number of via holes should be used to
connect the top and bottom ground planes. The
evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown
is available from Hittite upon request.
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350 or Arlon 25FR
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
7-8