INFINEON ICE3A2065ELJ

V er s io n 2.1 , 1 2 M ay 2 00 9
®
CoolSET -F3
ICE3A2065ELJ
Off-Line SMPS Current Mode
Controller with integrated 650V
CoolMOS® and Startup Cell
(Latched and frequency jitter
Mode)
Power Management & Supply
N e v e r
s t o p
t h i n k i n g .
CoolSET®-F3
ICE3A2065ELJ
Revision History:
2009-05-12
Datasheet
Previous Version: V2.0
Page
Subjects (major changes since last revision)
3,26
Revise marking
For questions on technology, delivery and prices please contact the Infineon Technologies Offices in Germany or
the Infineon Technologies Companies and Representatives worldwide: see our webpage at http://
www.infineon.com
CoolMOS®, CoolSET® are trademarks of Infineon Technologies AG.
Edition 2009-05-12
Published by
Infineon Technologies AG,
81726 Munich, Germany,
© 2008 Infineon Technologies AG.
All Rights Reserved.
Legal disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact your nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
CoolSET®-F3
ICE3A2065ELJ
Off-Line SMPS Current Mode Controller with
integrated 650V CoolMOS® and Startup Cell
(Latched and frequency jitter Mode)
Product Highlights
• Active Burst Mode to reach the lowest Standby Power Requirements
< 100mW
• Built-in latched off mode and external latch enable function to
increase robustness of the system
• Built-in and extendable blanking window for high load jumps to
increase system reliability
• Built-in soft start
• Frequency jitter for low EMI
• Robustness to system noise
• Pb-free lead plating; RoHS compliant
Features
Description
650V avalanche rugged CoolMOS® with built-in
Startup Cell
Active Burst Mode for lowest Standby Power
Fast load jump response in Active Burst Mode
100kHz internally fixed switching frequency
Built-in latched Off Mode for Overtemperature,
Overvoltage & Short Winding Detection
Auto Restart Mode for Overload, Open Loop &
VCC Undervoltage
Built-in Soft Start
Built-in and extendable blanking Window for short
duration high current
External latch enable function
Max Duty Cycle 75%
Overall tolerance of Current Limiting < ±5%
Internal PWM Leading Edge Blanking
BiCMOS technology provide wide VCC range
Frequency jitter and soft driving for low EMI
Robustness to system noise such as ESD,
lightning surge, etc.
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
PG-DIP-8
test
The CoolSET®F3 ELJ version is the enhanced LJ version
for system noise. It retains all the features of LJ series
such as BiCMOS technologies, active burst mode,
frequency jitter, propagation delay compensation, built-in
soft start, auto-restart protection for over load and open
loop, latch off protection for over voltage, over
temperature and short winding, external latch off enable,
built-in and extendable blanking time for short period of
over power, etc. It is target for low power SMPS
application such as Off-Line Battery Adapters, DVD player
and recorder, set-top box, auxiliary power supply, etc. The
ELJ version has implemented some noise resist
techniques to the IC such that it is more robust to the
system noise which is generated during system ESD test,
lightning surge test, transient test, etc.
Typical Application
+
CBulk
85 ... 270 VAC
Converter
DC Output
Snubber
-
CVCC
VCC
Drain
Startup Cell
Power Management
PWM Controller
Current Mode
Precise Low Tolerance Peak
Current Limitation
GND
Control
Unit
CS
Depl. CoolMOS™
Active Burst Mode
Latched Off Mode
Auto Restart Mode
RSense
FB
BL
CoolSET®-F3
( Latch & Jitter )
Type
Package
Marking
VDS
FOSC
RDSon1)
230VAC ±15%2)
85-265 VAC2)
ICE3A2065ELJ
PG-DIP-8
3A2065ELJ
650V
100kHz
0.92
57W
28W
1)
typ @ T=25°C
2)
Calculated maximum input power rating at Ta=75°C, Tj=125°C and without copper area as heat sink.
Version 2.1
3
12 May 2009
CoolSET®-F3
ICE3A2065ELJ
Table of Contents
Page
1
1.1
1.2
Pin Configuration and Functionality . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6
Pin Configuration with PG-DIP-8 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6
Pin Functionality . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6
2
Representative Blockdiagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
3
3.1
3.2
3.3
3.3.1
3.3.2
3.4
3.5
3.5.1
3.5.2
3.5.3
3.6
3.6.1
3.6.2
3.7
3.7.1
3.7.2
3.7.2.1
3.7.2.2
3.7.2.3
3.7.3
3.7.3.1
3.7.3.2
Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
Power Management . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
Improved Current Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
PWM-OP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
PWM-Comparator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
Startup Phase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
PWM Section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Oscillator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
PWM-Latch FF1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Gate Driver . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Current Limiting . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Leading Edge Blanking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Propagation Delay Compensation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Control Unit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Basic and Extendable Blanking Mode . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Active Burst Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Entering Active Burst Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Working in Active Burst Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Leaving Active Burst Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Protection Modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
Latched Off Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
Auto Restart Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18
4
4.1
4.2
4.3
4.3.1
4.3.2
4.3.3
4.3.4
4.3.5
4.3.6
4.3.7
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19
Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19
Operating Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20
Supply Section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20
Internal Voltage Reference . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .21
PWM Section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .21
Soft Start time . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .21
Control Unit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .22
Current Limiting . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .23
CoolMOS® Section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .23
5
Temperature derating curve . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .24
Version 2.1
4
12 May 2009
CoolSET®-F3
ICE3A2065ELJ
6
Outline Dimension . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .25
7
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .26
8
Schematic for recommended PCB layout . . . . . . . . . . . . . . . . . . . . . . . .27
Version 2.1
5
12 May 2009
CoolSET®-F3
ICE3A2065ELJ
Pin Configuration and Functionality
1
Pin Configuration and Functionality
1.1
Pin Configuration with PG-DIP-8
Pin
Symbol
BL
Blanking and Latch
2
FB
Feedback
3
CS
Current Sense/
650V1) CoolMOS® Source
4
Drain
650V1) CoolMOS® Drain
5
Drain
650V1) CoolMOS® Drain
6
n.c.
Not Connected
7
VCC
Controller Supply Voltage
8
GND
Controller Ground
Pin Functionality
BL (Blanking and Latch)
The BL pin combines the functions of extendable
blanking time for entering the Auto Restart Mode and
the external latch enable. The extendable blanking time
function is to extend the built-in 20ms blanking time by
adding an external capacitor at BL to ground. The
external latch enable function is an external access to
latch off the IC. It is triggered by pulling down the BL pin
to less than 0.1V.
Function
1
1)
1.2
FB (Feedback)
The information about the regulation is provided by the
FB Pin to the internal Protection Unit and to the internal
PWM-Comparator to control the duty cycle. The FBSignal controls in case of light load the Active Burst
Mode of the controller.
at Tj = 110°C
CS (Current Sense)
The Current Sense pin senses the voltage developed
on the series resistor inserted in the source of the
integrated CoolMOS®. If CS reaches the internal
threshold of the Current Limit Comparator, the Driver
output is immediately switched off. Furthermore the
current information is provided for the PWMComparator to realize the Current Mode.
Package PG-DIP-8
BL
1
8
GND
FB
2
7
VCC
CS
3
6
n.c.
Drain (Drain of integrated CoolMOS®)
Pin Drain is the connection to the Drain of the internal
CoolMOS®.
VCC (Power supply)
The VCC pin is the positive supply of the IC. The
operating range is between 10.5V and 26V.
GND (Ground)
The GND pin is the ground of the controller.
Drain
Figure 1
Note:
4
5
Drain
Pin Configuration PG-DIP-8(top view)
Pin 4 and 5 are shorted within the DIP 8
package.
Version 2.1
6
12 May 2009
Figure 2
Version 2.1
TLE
FB
#1 CBK
BL
7
C6b
C6a
C5
C4
C3
C2
C1
T3
&
1
G2
G1
1
G3
G5
&
&
G6
Spike
Blanking
8.0us
8us Blanking Time
Tj >140°C
&
G11
Active Burst
Mode
Auto
Restart
Mode
Soft
Start
Block
Latched Off
Mode
Power-Down
Reset
Thermal Shutdown
Spike
Blanking
8.0us
20ms Blanking
Time
20ms
Blanking
Time
0.6V
Latched Off
Mode Reset
VVCC < 6.23V
Internal Bias
Power Management
18V
5.0V
&
G7
Current Mode
x3.2
C8
PWM
Comparator
PWM OP
0.6V
C7
Soft Start Soft-Start
Comparator
10.5V
Undervoltage Lockout
Voltage
Reference
VCC
C11
&
G10
C12
C10
FF1
S
R Q
1pF
&
G9
Gate
Driver
D1
10kΩ
Current Limiting
Vcsth Leading
Edge
Blanking
220ns
Drain
CoolMOS®
Startup Cell
PWM
Section
CVCC
1.66V
0.31V
1
G8
0.72
Propagation-Delay
Compensation
Spike
Blanking
190ns
Freq. jitter
Clock
Duty Cycle
max
Oscillator
# : optional external components;
#1 : CBK is used to extand the Blanking Time
#2 : TLE is used to enable the external Latch function
ICE3Axx65ELJ / CoolSET®-F3 ( Latch & Jitter Mode )
3.0V
3.61V
1.35V
4.5V
4.0V
0.1V
1 ms
counter
24V
VCC
T1
T2
3.25kΩ
Control Unit
2pF
25kΩ
RFB
5.0V
S1
0.9V
IBK
5.0V
CBulk
CS
RSense
GND
+
Conver
DC Out
VOUT
-
2
Latch
Enable
Signal #2
85 ... 270 VAC
Snubber
CoolSET®-F3
ICE3A2065ELJ
Representative Blockdiagram
Representative Blockdiagram
Representative Blockdiagram
12 May 2009
CoolSET®-F3
ICE3A2065ELJ
Functional Description
3
Functional Description
the BL pin is pulled down to less than 0.1V, the Latch
Off Mode is triggered.
The Auto Restart Mode reduces the average power
conversion to a minimum under unsafe operating
conditions. This is necessary for a prolonged fault
condition which could otherwise lead to a destruction of
the SMPS over time. Once the malfunction is removed,
normal operation is automatically retained after the
next Start Up Phase.
The internal precise peak current limitation reduces the
costs for the transformer and the secondary diode. The
influence of the change in the input voltage on the
power limitation can be avoided together with the
integrated
Propagation
Delay
Compensation.
Therefore the maximum power is nearly independent
on the input voltage which is required for wide range
SMPS. There is no need for an extra over-sizing of the
SMPS, e.g. the transformer or the secondary diode.
Furthermore, this ELJ version implements the
frequency jitter mode to the switching clock such that
the EMI noise will be effectively reduced.
All values which are used in the functional description
are typical values. For calculating the worst cases the
min/max values which can be found in section 4
Electrical Characteristics have to be considered.
3.1
Introduction
®
CoolSET -F3 ELJ series is the enhanced version of the
LJ series. Not only retains all the features of LJ series
but it also implements with special technique to make
the IC more robust to the system noise which is
generated during transient test, system ESD test,
lightning surge test, etc.
In order to obtain the best-in class low standby power,
a new fully integrated Standby Power concept is
implemented into the IC. An intelligent Active Burst
Mode is used for this Standby Mode. After entering this
mode there is still a full control of the power conversion
by the secondary side via the same optocoupler that is
used for the normal PWM control. The response on
load jumps is optimized. The voltage ripple on Vout is
minimized. Vout is on well controlled in this mode.
The usually external connected RC-filter in the
feedback line after the optocoupler is integrated in the
IC to reduce the external part count.
Furthermore a high voltage Startup Cell is integrated
into the IC which is switched off once the Undervoltage
Lockout on-threshold of 18V is exceeded. This Startup
Cell is part of the integrated CoolMOS®. The external
startup resistor is no longer necessary as this Startup
Cell is connected to the Drain. Power losses are
therefore reduced. This increases the efficiency under
light load conditions drastically.
This version is adopting the BiCMOS technology and it
can increase design flexibility as the Vcc voltage range
is increased to 26V.
For this ELJ version, the soft start is a built-in function.
It is set at 20ms. Then it can save external component
counts.
There are 2 modes of blanking time for high load
jumps; the basic mode and the extendable mode. The
blanking time for the basic mode is set at 20ms while
the extendable mode will increase the blanking time
from basic mode by adding external capacitor at the BL
pin. During this time window the overload detection is
disabled.
In order to increase the robustness and safety of the
system, the IC provides 2 levels of protection modes:
Latched Off Mode and Auto Restart Mode. The
Latched Off Mode is only entered under dangerous
conditions which can damage the SMPS if not switched
off immediately. A restart of the system can only be
done by recycling the AC line. In addition, for this ELJ
version, there is an external Latch Enable function
provided to increase the flexibility in protection. When
Version 2.1
3.2
Power Management
Drain
VCC
Startup Cell
CoolM OS ®
Power M anagement
Internal Bias
Latched Off M ode
Reset
V V CC < 6.23V
Power-Down Reset
Undervoltage Lockout
18V
10.5V
5.0V
Voltage
R eference
Auto R estart
Mode
Soft Start block
Active Burst
Mode
Latched Off
Mode
Figure 3
Power Management
The Undervoltage Lockout monitors the external
supply voltage VVCC. When the SMPS is plugged to the
main line the internal Startup Cell is biased and starts
to charge the external capacitor CVCC which is
8
12 May 2009
CoolSET®-F3
ICE3A2065ELJ
Functional Description
Current Mode means the duty cycle is controlled by the
slope of the primary current. This is done by comparing
the FB signal with the amplified current sense signal.
connected to the VCC pin. This VCC charge current is
controlled to 0.9mA by the Startup Cell. When the VVCC
exceeds the on-threshold VCCon=18V, the bias circuit
are switched on. Then the Startup Cell is switched off
by the Undervoltage Lockout and therefore no power
losses present due to the connection of the Startup Cell
to the Drain voltage. To avoid uncontrolled ringing at
switch-on a hysteresis start up voltage is implemented.
The switch-off of the controller can only take place after
Active Mode was entered and VVCC falls below 10.5V.
The maximum current consumption before the
controller is activated is about 250µA.
When VVCC falls below the off-threshold VCCoff=10.5V,
the bias circuit switched off and the soft start counter is
reset. Thus it is ensured that at every startup cycle the
soft start starts at zero.
The internal bias circuit is switched off if Latched Off
Mode or Auto Restart Mode is entered. The current
consumption is then reduced to 250µA.
Once the malfunction condition is removed, this block
will then turn back on. The recovery from Auto Restart
Mode does not require re-cycling the AC line. In case
Latched Off Mode is entered, VCC needs to be lowered
below 6.23V to reset the Latched Off Mode. This is
done usually by re-cycling the AC line.
When Active Burst Mode is entered, the internal Bias is
switched off most of the time but the Voltage Reference
is kept alive in order to reduce the current consumption
below 450µA.
3.3
Amplified Current Signal
FB
0.6V
Driver
Ton
t
Figure 5
Soft-Start Comparator
PWM-Latch
C8
R
Q
Driver
S
Q
0.6V
PWM OP
x3.2
CS
Improved
Current Mode
Figure 4
Current Mode
Version 2.1
Pulse Width Modulation
In case the amplified current sense signal exceeds the
FB signal the on-time Ton of the driver is finished by
resetting the PWM-Latch (see Figure 5).
The primary current is sensed by the external series
resistor RSense inserted in the source of the integrated
CoolMOS®. By means of Current Mode regulation, the
secondary output voltage is insensitive to the line
variations. The current waveform slope will change with
the line variation, which controls the duty cycle.
The external RSense allows an individual adjustment of
the maximum source current of the integrated
CoolMOS®.
To improve the Current Mode during light load
conditions the amplified current ramp of the PWM-OP
is superimposed on a voltage ramp, which is built by
the switch T2, the voltage source V1 and a resistor R1
(see Figure 6). Every time the oscillator shuts down for
maximum duty cycle limitation the switch T2 is closed
by VOSC. When the oscillator triggers the Gate Driver,
T2 is opened so that the voltage ramp can start.
In case of light load the amplified current ramp is too
small to ensure a stable regulation. In that case the
Voltage Ramp is a well defined signal for the
comparison with the FB-signal. The duty cycle is then
controlled by the slope of the Voltage Ramp.
By means of the time delay circuit which is triggered by
the inverted VOSC signal, the Gate Driver is switched-off
until it reaches approximately 156ns delay time (see
Figure 7). It allows the duty cycle to be reduced
continuously till 0% by decreasing VFB below that
threshold.
Improved Current Mode
FB
t
9
12 May 2009
CoolSET®-F3
ICE3A2065ELJ
Functional Description
3.3.1
The input of the PWM-OP is applied over the internal
leading edge blanking to the external sense resistor
RSense connected to pin CS. RSense converts the source
current into a sense voltage. The sense voltage is
amplified with a gain of 3.2 by PWM OP. The output of
the PWM-OP is connected to the voltage source V1.
The voltage ramp with the superimposed amplified
current signal is fed into the positive inputs of the PWMComparator C8 and the Soft-Start-Comparator (see
Figure 6).
Soft-Start Comparator
PWM Comparator
FB
C8
PWM-Latch
Oscillator
VOSC
time delay
circuit (156ns)
10kΩ
T2
3.3.2
Gate Driver
X3.2
V1
C1
PWM-Comparator
The PWM-Comparator compares the sensed current
signal of the integrated CoolMOS® with the feedback
signal VFB (see Figure 8). VFB is created by an external
optocoupler or external transistor in combination with
the internal pull-up resistor RFB and provides the load
information of the feedback circuitry. When the
amplified current signal of the integrated CoolMOS®
exceeds the signal VFB the PWM-Comparator switches
off the Gate Driver.
0.6V
R1
PWM-OP
PWM OP
Voltage Ramp
Figure 6
5V
Improved Current Mode
RFB
Soft-Start Comparator
FB
VOSC
PWM-Latch
C8
max.
Duty Cycle
PWM Comparator
0.6V
t
Voltage Ramp
Optocoupler
PWM OP
CS
0.6V
X3.2
FB
Improved
Current Mode
t
Gate Driver
156ns time delay
Figure 8
PWM Controlling
t
Figure 7
Light Load Conditions
Version 2.1
10
12 May 2009
CoolSET®-F3
ICE3A2065ELJ
Functional Description
3.4
Startup Phase
Soft Start finish
Soft Start counter
SoftS
Soft Start
Soft Start
V SoftS
Soft-Start
Comparator
C7
&
V SoftS2
V SoftS1
Gate Driver
G7
Figure 10
Soft Start Phase
0.6V
x3.2
5V
CS
PWM OP
R SoftS
SoftS
Figure 9
Soft Start
In the Startup Phase, the IC provides a Soft Start
period to control the maximum primary current by
means of a duty cycle limitation. The Soft Start function
is a built-in function and it is controlled by an internal
counter.
When the VVCC exceeds the on-threshold voltage, the
IC starts the Soft Start mode. The function is realized
by an internal Soft Start resistor, a current sink and a
counter. And the amplitude of the current sink is
controlled by the counter.
Soft Start 32I
Counter
Figure 11
8I
4I
2I
I
Soft Start Circuit
After the IC is switched on, the VSoftS voltage is
controlled such that the voltage is increased stepwisely (32 steps) with the increase of the counts. The
Soft Start counter would send a signal to the current
sink control in every 600us such that the current sink
decrease gradually and the duty ratio of the gate drive
increase gradually. The Soft Start will be finished in
20ms after the IC is switched on. At the end of the Soft
Start period, the current sink is switched off.
Version 2.1
11
12 May 2009
CoolSET®-F3
ICE3A2065ELJ
Functional Description
The Start-Up time TStart-Up before the converter output
voltage VOUT is settled, must be shorter than the SoftStart Phase TSoft-Start (see Figure 13).
By means of Soft-Start there is an effective
minimization of current and voltage stresses on the
integrated CoolMOS®, the clamp circuit and the output
overshoot and it helps to prevent saturation of the
transformer during Start-Up.
VSoftS
TSoft-Start
VSOFTS32
3.5
PWM Section
t
Gate
Driver
0.75
PWM Section
Oscillator
Duty Cycle
max
Clock
t
Figure 12
Frequency
Jitter
Gate drive signal under Soft-Start Phase
Within the soft start period, the duty cycle is increasing
from zero to maximum gradually (see Figure 12).
In addition to Start-Up, Soft-Start is also activated at
each restart attempt during Auto Restart.
Soft Start
Block
Soft Start
Comparator
VSoftS
PWM
Comparator
TSoft-Start
FF1
1
G8
Gate Driver
S
R
Q
&
G9
Current
Limiting
VSOFTS32
CoolMOS®
Gate
VFB
Figure 14
t
3.5.1
Oscillator
The oscillator generates a fixed frequency of 100KHz
with frequency jittering of ±4% (which is ±4KHz) at a
jittering period of 4ms.
A capacitor, a current source and a current sink which
determine the frequency are integrated. The charging
and discharging current of the implemented oscillator
capacitor are internally trimmed, in order to achieve a
very accurate switching frequency. The ratio of
controlled charge to discharge current is adjusted to
reach a maximum duty cycle limitation of Dmax=0.75.
Once the Soft Start period is over and when the IC goes
into normal operating mode, the switching frequency of
the clock is varied by the control signal from the Soft
Start block. Then the switching frequency is varied in
range of 100KHz ± 4KHz at period of 4ms.
4.0V
VOUT
t
VOUT
TStart-Up
t
Figure 13
Start Up Phase
Version 2.1
PWM Section Block
12
12 May 2009
CoolSET®-F3
ICE3A2065ELJ
Functional Description
is set to low in order to disable power transfer to the
secondary side.
3.5.2
PWM-Latch FF1
The output of the oscillator block provides continuous
pulse to the PWM-Latch which turns on/off the internal
CoolMOS® After the PWM-Latch is set, it is reset by the
PWM comparator, the Soft Start comparator or the
Current -Limit comparator. When it is in reset mode, the
output of the driver is shut down immediately.
3.5.3
3.6
Current Limiting
PWM Latch Latched Off
FF1
Mode
Current Limiting
Gate Driver
Spike
Blanking
190ns
1.66V
C11
VCC
Propagation-Delay
Compensation
PWM-Latch
1
Vcsth
C10
Gate
PWM-OP
®
CoolMOS
Leading
Edge
Blanking
220ns
&
G10
C12
0.31V
Gate Driver
Figure 15
Gate Driver
The driver-stage is optimized to minimize EMI and to
provide high circuit efficiency. This is done by reducing
the switch on slope when exceeding the internal
CoolMOS® threshold. This is achieved by a slope
control of the rising edge at the driver’s output (see
Figure 16).
Figure 17
Current Limiting Block
There is a cycle by cycle peak current limiting operation
realized by the Current-Limit comparator C10. The
source current of the integrated CoolMOS® is sensed
via an external sense resistor RSense. By means of
RSense the source current is transformed to a sense
voltage VSense which is fed into the pin CS. If the voltage
VSense exceeds the internal threshold voltage Vcsth, the
comparator C10 immediately turns off the gate drive by
resetting the PWM Latch FF1.
A Propagation Delay Compensation is added to
support the immediate shut down of the integrated
CoolMOS® with very short propagation delay. Thus the
influence of the AC input voltage on the maximum
output power can be reduced to minimal.
In order to prevent the current limit from distortions
caused by leading edge spikes, a Leading Edge
Blanking is integrated in the current sense path for the
comparators C10, C12 and the PWM-OP.
The output of comparator C12 is activated by the Gate
G10 if Active Burst Mode is entered. When it is
activated, the current limiting is reduced to 0.31V. This
ca. t = 130ns
5V
t
Gate Rising Slope
Thus the leading switch on spike is minimized.
Furthermore the driver circuit is designed to eliminate
cross conduction of the output stage.
During power up, when VCC is below the undervoltage
lockout threshold VVCCoff, the output of the Gate Driver
Version 2.1
D1
CS
(internal)
VGate
Figure 16
1pF
10k
Active Burst
Mode
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12 May 2009
CoolSET®-F3
ICE3A2065ELJ
Functional Description
The overshoot of Signal2 is larger than of Signal1 due
to the steeper rising waveform. This change in the
slope is depending on the AC input voltage.
Propagation Delay Compensation is integrated to
reduce the overshoot due to dI/dt of the rising primary
current. Thus the propagation delay time between
exceeding the current sense threshold Vcsth and the
switching off of the integrated internal CoolMOS® is
compensated over temperature within a wide range.
Current Limiting is then very accurate.
For example, Ipeak = 0.5A with RSense = 2. The current
sense threshold is set to a static voltage level Vcsth=1V
without Propagation Delay Compensation. A current
ramp of dI/dt = 0.4A/µs, or dVSense/dt = 0.8V/µs, and a
propagation delay time of tPropagation Delay =180ns leads
to an Ipeak overshoot of 14.4%. With the propagation
delay compensation, the overshoot is only around 2%
(see Figure 20).
voltage level determines the maximum power level in
Active Burst Mode.
Furthermore, the comparator C11 is implemented to
detect dangerous current levels which could occur if
there is a short winding in the transformer or the
secondary diode is shorten. To ensure that there is no
accidentally entering of the Latched Mode by the
comparator C11, a 190ns spike blanking time is
integrated in the output path of comparator C11.
3.6.1
Leading Edge Blanking
VSense
Vcsth
tLEB = 220ns
with compensation
without compensation
V
1,3
t
1,25
1,2
Leading Edge Blanking
VSense
Figure 18
Whenever the internal CoolMOS® is switched on, a
leading edge spike is generated due to the primaryside capacitances and reverse recovery time of the
secondary-side rectifier. This spike can cause the gate
drive to switch off unintentionally. In order to avoid a
premature termination of the switching pulse, this spike
is blanked out with a time constant of tLEB = 220ns.
3.6.2
1
0,95
0,9
0
Ipeak2
Ipeak1
ILimit
IOvershoot2
Figure 20
V OSC
0,6
0,8
1
1,2
1,4
1,6
1,8
V
2
µs
Overcurrent Shutdown
m a x. D uty C ycle
Signal1
tPropagation Delay
o ff tim e
V S e n se
P ro p ag a tio n D e la y
t
V csth
t
S ig n a l1
S ig n a l2
Current Limiting
Figure 21
Version 2.1
0,4
The Propagation Delay Compensation is realized by
means of a dynamic threshold voltage Vcsth (see Figure
21). In case of a steeper slope the switch off of the
driver is earlier to compensate the delay.
IOvershoot1
Figure 19
0,2
dVSense
dt
In case of overcurrent detection, there is always
propagation delay to switch off the internal CoolMOS®.
An overshoot of the peak current Ipeak is induced to the
delay, which depends on the ratio of dI/dt of the peak
current (see Figure 19).
Signal2
1,1
1,05
Propagation Delay Compensation
ISense
1,15
14
t
Dynamic Voltage Threshold Vcsth
12 May 2009
CoolSET®-F3
ICE3A2065ELJ
Functional Description
3.7
Control Unit
the 8.0us spike blanking time, the Auto Restart Mode is
activated.
For example, if CBK = 0.22uF, IBK = 8.4uA
Blanking time = 20ms + CBK x (4.0 - 0.9) / IBK = 100ms
The 20ms blanking time circuit after C4 is disabled by
the soft stat block such that the controller can start up
properly.
The Active Burst Mode has basic blanking mode only
while the Auto Restart Mode has both the basic and the
extendable blanking mode.
The Control Unit contains the functions for Active Burst
Mode, Auto Restart Mode and Latched Off Mode. The
Active Burst Mode and the Auto Restart Mode both
have 20ms internal Blanking Time. For the Auto
Restart Mode, a further extendable Blanking Time is
achieved by adding external capacitor at BL pin. By
means of this Blanking Time, the IC avoids entering
into these two modes accidentally. Furthermore those
buffer time for the overload detection is very useful for
the application that works in low current but requires a
short duration of high current occasionally.
3.7.1
3.7.2
Active Burst Mode
The IC enters Active Burst Mode under low load
conditions. With the Active Burst Mode, the efficiency
increases significantly at light load conditions while still
maintaining a low ripple on VOUT and a fast response on
load jumps. During Active Burst Mode, the IC is
controlled by the FB signal. Since the IC is always
active, it can be a very fast response to the quick
change at the FB signal. The Start up Cell is kept OFF
in order to minimize the power loss.
Basic and Extendable Blanking Mode
BL
# CBK
5.0V
IBK
0.9V
1
S1
Soft Start
block
G2
Internal Bias
C3
Spike
Blanking
8.0us
4.0V
Current
Limiting
&
G10
20 ms Blanking
Time
&
4.5V
C4
G5
Auto
Restart
Mode
4.5V
C4
Active
Burst
Mode
FB
FB
C5
1.35V
20ms
Blanking
Time
20ms
Blanking
Time
&
G6
C5
Active
Burst
Mode
&
G6
1.35V
Control Unit
C6a
3.61V
Figure 22
&
Basic and Extendable Blanking Mode
C6b
There are 2 kinds of Blanking mode; basic mode and
the extendable mode. The basic mode has an internal
pre-set 20ms blanking time while the extendable mode
has extended blanking time to basic mode by
connecting an external capacitor to the BL pin. For the
extendable mode, the gate G5 is blocked even though
the 20ms blanking time is reached if an external
capacitor CBK is added to BL pin. While the 20ms
blanking time is passed, the switch S1 is opened by
G2. Then the 0.9V clamped voltage at BL pin is
charged to 4.0V through the internal IBK constant
current. Then G5 is enabled by comparator C3. After
Version 2.1
G11
3.0V
Figure 23
Control Unit
Active Burst Mode
The Active Burst Mode is located in the Control Unit.
Figure 23 shows the related components.
3.7.2.1
Entering Active Burst Mode
The FB signal is kept monitoring by the comparator C4.
During normal operation, the internal blanking time
counter is reset to 0. When FB signal falls below 1.35V,
15
12 May 2009
CoolSET®-F3
ICE3A2065ELJ
Functional Description
it starts to count. When the counter reach 20ms and FB
signal is still below 1.35V, the system enters the Active
Burst Mode. This time window prevents a sudden
entering into the Active Burst Mode due to large load
jumps.
After entering Active Burst Mode, a burst flag is set and
the internal bias is switched off in order to reduce the
current consumption of the IC to approx. 450uA.
It needs the application to enforce the VCC voltage
above the Undervoltage Lockout level of 10.5V such
that the Startup Cell will not be switched on
accidentally. Or otherwise the power loss will increase
drastically. The minimum VCC level during Active Burst
Mode depends on the load condition and the
application. The lowest VCC level is reached at no load
condition.
VFB
Entering
Active Burst
Mode
4.5V
3.61V
3.0V
Leaving
Active Burst
Mode
1.35V
Blanking Timer
t
20ms Blanking Time
3.7.2.2
Working in Active Burst Mode
After entering the Active Burst Mode, the FB voltage
rises as VOUT starts to decrease, which is due to the
inactive PWM section. The comparator C6a monitors
the FB signal. If the voltage level is larger than 3.61V,
the internal circuit will be activated; the Internal Bias
circuit resumes and starts to provide switching pulse. In
Active Burst Mode the gate G10 is released and the
current limit is reduced to 0.31V. In one hand, it can
reduce the conduction loss and the other hand, it can
reduce the audible noise. If the load at VOUT is still kept
unchanged, the FB signal will drop to 3.0V. At this level
the C6b deactivates the internal circuit again by
switching off the internal Bias. The gate G11 is active
again as the burst flag is set after entering Active Burst
Mode. In Active Burst Mode, the FB voltage is changing
like a saw tooth between 3.0V and 3.61V (see Figure
24).
VCS
1.06V
t
Current limit level
during Active Burst
Mode
0.31V
VVCC
t
10.5V
3.7.2.3
Leaving Active Burst Mode
The FB voltage will increase immediately if there is a
high load jump. This is observed by the comparator C4.
As the current limit is ca. 31% during Active Burst
Mode, a certain load jump is needed so that the FB
signal can exceed 4.5V. At that time the comparator C4
resets the Active Burst Mode control which in turn
blocks the comparator C12 by the gate G10. The
maximum current can then be resumed to stabilize
VOUT.
IVCC
t
3.8mA
450uA
VOUT
t
t
Figure 24
Version 2.1
16
Signals in Active Burst Mode
12 May 2009
CoolSET®-F3
ICE3A2065ELJ
Functional Description
The VCC voltage is observed by comparator C1 while
the FB voltage is monitored by the comparator C4. If
the VCC voltage is > 24V and the FB is > 4.5V, the
overvoltage detection is activated. That means the
overvoltage detection is only activated if the FB signal
is outside the operating range > 4.5V, e.g. when Open
Loop happens. The logic can eliminate the possible of
entering Latch off mode if there is a small voltage
overshoots of VVCC during normal operating.
The internal Voltage Reference is switched off most of
the time once Latched Off Mode is entered in order to
minimize the current consumption of the IC. This
Latched Off Mode can only be reset if the VVCC < 6.23V.
In this mode, only the UVLO is working which controls
the Startup Cell by switching on/off at VVCCon/VVCCoff.
During this phase, the average current consumption is
only 250µA. As there is no longer a self-supply by the
auxiliary winding, the VCC drops. The Undervoltage
Lockout switches on the integrated Startup Cell when
VCC falls below 10.5V. The Startup Cell is switched off
again when VCC has exceeded 18V. Once the Latched
Off Mode was entered, there is no Start Up Phase
whenever the VCC exceeds the switch-on level of the
Undervoltage Lockout. Therefore the VCC voltage
changes between the switch-on and switch-off levels of
the Undervoltage Lockout with a saw tooth shape (see
Figure 26).
3.7.3
Protection Modes
The IC provides several protection features which are
separated into two categories. Some enter Latched Off
Mode and the others enter Auto Restart Mode. Besides
the pre-defined protection feature for the Latch off
mode, there is also an external Latch off Enable pin for
customer defined Latch off protection features. The
Latched Off Mode can only be reset if VCC falls below
6.23V. Both modes prevent the SMPS from destructive
states.The following table shows the relationship
between possible system failures and the chosen
protection modes.
VCC Overvoltage
Latched Off Mode
Overtemperature
Latched Off Mode
Short Winding/Short Diode Latched Off Mode
External latch enable
Latched Off Mode
Overload
Auto Restart Mode
Open Loop
Auto Restart Mode
VCC Undervoltage
Auto Restart Mode
Short Optocoupler
Auto Restart Mode
3.7.3.1
Latched Off Mode
VVCC
CS
C11
1.66V
Spike
Blanking
190ns
Latched Off
Mode Reset
VVCC < 6.23V
UVLO
1
1ms
counter
G3
Latched
Off Mode
10.5V
IVCCStart
BL
TLE
18V
8us
Blanking
Time
C2
#
t
0.9mA
0.1V
Latch
Enable
signal
VCC
&
C1
24V
G1
Spike
Blanking
8.0us
VOUT
Figure 26
4.5V
C4
FB
Thermal Shutdown
Control Unit
Version 2.1
Signals in Latched Off Mode
The Thermal Shutdown block monitors the junction
temperature of the IC. After detecting a junction
temperature higher than latched thermal shutdown
temperature; TjSD, the Latched Off Mode is entered.
The signals coming from the temperature detection and
VCC overvoltage detection are fed into a spike
blanking with a time constant of 8.0µs in order to
ensure the system reliability.
Voltage
Reference
Tj >140°C
Figure 25
t
Latched Off Mode
17
12 May 2009
CoolSET®-F3
ICE3A2065ELJ
Functional Description
Furthermore, a short winding or short diode on the
secondary side can be detected by the comparator C11
which is in parallel to the propagation delay
compensated current limit comparator C10. In normal
operating mode, comparator C10 controls the
maximum level of the CS signal at 1.06V. If there is a
failure such as short winding or short diode, C10 is no
longer able to limit the CS signal at 1.06V. Instead the
comparator C11 detects the peak current voltage >
1.66V and enters the Latched Off Mode immediately in
order to keep the SMPS in a safe stage.
In case the pre-defined Latch Off features are not
sufficient, there is a customer defined external Latch
Enable feature. The Latch Off Mode can be triggered
by pulling down the BL pin to < 0.1V. It can simply add
a trigger signal to the base of the externally added
transistor, TLE at the BL pin. To ensure this latch
function will not be mis-triggered during start up, a 1ms
delay time is implemented to blank the unstable signal.
3.7.3.2
Auto Restart Mode
BL
#
to charge the capacitor CBK from 0.9V to 4.0V after the
switch S1 is released. The charging time from 0.9V to
4.0V are the extendable blanking time. If CBK is 0.22uF
and IBK is 8.4uA, the extendable blanking time is
around 80ms and the total blanking time is 100ms. In
combining the FB and blanking time, there is a blanking
window generated which prevents the system to enter
Auto Restart Mode due to large load jumps.
In case of VCC undervoltage, the IC enters into the
Auto Restart Mode and starts a new startup cycle.
Short Optocoupler also leads to VCC undervoltage as
there is no self supply after activating the internal
reference and bias.
In contrast to the Latched Off Mode, there is always a
Startup Phase with switching cycles in Auto Restart
Mode. After this Start Up Phase, the conditions are
again checked whether the failure mode is still present.
Normal operation is resumed once the failure mode is
removed that had caused the Auto Restart Mode.
CBK
5.0V
IBK
0.9V
1
S1
G2
C3
Spike
Blanking
8.0us
4.0V
&
4.5V
FB
C4
20ms
Blanking
Time
G5
Auto
Restart
Mode
Control Unit
Figure 27
Auto Restart Mode
In case of Overload or Open Loop, the FB exceeds
4.5V which will be observed by comparator C4. Then
the internal blanking counter starts to count. When it
reaches 20ms, the switch S1 is released. Then the
clamped voltage 0.9V at VBL can increase. When there
is no external capacitor CBK connected, the VBL will
reach 4.0V immediately. When both the input signals at
AND gate G5 is positive, the Auto-Restart Mode will be
activated after the extra spike blanking time of 8.0us is
elapsed. However, when an extra blanking time is
needed, it can be achieved by adding an external
capacitor, CBK. A constant current source of IBK will start
Version 2.1
18
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CoolSET®-F3
ICE3A2065ELJ
Electrical Characteristics
4
Electrical Characteristics
Note:
All voltages are measured with respect to ground (Pin 8). The voltage levels are valid if other ratings are
not violated.
4.1
Note:
Absolute Maximum Ratings
Absolute maximum ratings are defined as ratings, which when being exceeded may lead to destruction
of the integrated circuit. For the same reason make sure, that any capacitor that will be connected to pin 7
(VCC) is discharged before assembling the application circuit.Ta=25°C unless otherwise specified.
Parameter
Symbol
Limit Values
min.
max.
Unit
Remarks
Tj=110°C
Drain Source Voltage
VDS
-
650
V
Pulse drain current, tp limited by max.
Tj=150°C
ID_Puls
-
10.3
A
Avalanche energy, repetitive tAR limited EAR
by max. Tj=150°C1)
-
0.4
mJ
Avalanche current, repetitive tAR limited IAR
by max. Tj=150°C
-
2.0
A
VCC Supply Voltage
VVCC
-0.3
27
V
FB Voltage
VFB
-0.3
5.5
V
BL Voltage
VFB
-0.3
5.5
V
CS Voltage
VCS
-0.3
5.5
V
Junction Temperature
Tj
-40
150
°C
Storage Temperature
TS
-55
150
°C
Thermal Resistance
Junction -Ambient
RthJA
-
90
K/W
PG-DIP-8
Soldering temperature, wavesoldering
only allowed at leads
Tsold
-
260
°C
1.6mm (0.063in.) from case
for 10s
ESD Capability (incl. Drain Pin)
VESD
-
22)
kV
Human body model3)
Controller & CoolMOS®
1)
Repetitive avalanche causes additional power losses that can be calculated as PAV=EAR*f
2)
2KV is for all pin combinations except VCC to GND is 1KV
3)
According to EIA/JESD22-A114-B (discharging a 100pF capacitor through a 1.5kΩ series resistor)
Version 2.1
19
12 May 2009
CoolSET®-F3
ICE3A2065ELJ
Electrical Characteristics
4.2
Note:
Operating Range
Within the operating range the IC operates as described in the functional description.
Parameter
Symbol
Limit Values
min.
max.
Unit
VCC Supply Voltage
VVCC
VVCCoff
26
V
Junction Temperature of
Controller
TjCon
-25
130
°C
Junction Temperature of
CoolMOS®
TjCoolMOS
-25
150
°C
4.3
4.3.1
Note:
Remarks
Max value limited due to thermal
shut down of controller
Characteristics
Supply Section
The electrical characteristics involve the spread of values within the specified supply voltage and junction
temperature range TJ from – 25 °C to 130 °C. Typical values represent the median values, which are
related to 25°C. If not otherwise stated, a supply voltage of VCC = 18 V is assumed.
Parameter
Symbol
Limit Values
min.
typ.
max.
Unit
Test Condition
Start Up Current
IVCCstart
-
150
250
µA
VVCC =17V
VCC Charge Current
IVCCcharge1
-
-
5.0
mA
VVCC = 0V
IVCCcharge2
0.55
0.90
1.60
mA
VVCC = 1V
IVCCcharge3
-
0.7
-
mA
VVCC =17V
Leakage Current of
Start Up Cell and CoolMOS®
IStartLeak
-
0.2
50
µA
VDrain = 450V
at Tj=100°C
Supply Current with
Inactive Gate
IVCCsup1
-
1.5
2.5
mA
Supply Current with Active Gate
IVCCsup2
-
3.8
4.8
mA
IFB = 0A
Supply Current in Latched Off
Mode
IVCClatch
-
250
-
µA
IFB = 0A
Supply Current in
Auto Restart Mode with Inactive
Gate
IVCCrestart
-
250
-
µA
IFB = 0A
Supply Current in Active Burst
Mode with Inactive Gate
IVCCburst1
-
450
950
µA
VFB = 2.5V
IVCCburst2
-
450
950
µA
VVCC = 11.5V,VFB = 2.5V
VVCCon
VVCCoff
VVCChys
17.0
9.8
-
18.0
10.5
7.5
19.0
11.2
-
V
V
V
VCC Turn-On Threshold
VCC Turn-Off Threshold
VCC Turn-On/Off Hysteresis
Version 2.1
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CoolSET®-F3
ICE3A2065ELJ
Electrical Characteristics
4.3.2
Internal Voltage Reference
Parameter
Trimmed Reference Voltage
4.3.3
Symbol
VREF
Limit Values
min.
typ.
max.
4.90
5.00
5.10
Unit
Test Condition
V
measured at pin FB
IFB = 0
PWM Section
Parameter
Symbol
Limit Values
Unit
Test Condition
min.
typ.
max.
fOSC1
87
100
113
kHz
fOSC2
92
100
108
kHz
Tj = 25°C
Frequency Jittering Range
fjitter
-
±4.0
-
kHz
Tj = 25°C
Max. Duty Cycle
Dmax
0.70
0.75
0.80
Min. Duty Cycle
Dmin
0
-
-
PWM-OP Gain
AV
3.0
3.2
3.4
Voltage Ramp Offset
VOffset-Ramp
-
0.6
-
V
VFB Operating Range Min Level VFBmin
-
0.5
-
V
VFB Operating Range Max level
VFBmax
-
-
4.3
V
FB Pull-Up Resistor
RFB
9
15.4
22
kΩ
Fixed Oscillator Frequency
1)
VFB < 0.3V
CS=1V, limited by
Comparator C41)
The parameter is not subjected to production test - verified by design/characterization
4.3.4
Soft Start time
Parameter
Soft Start time
Version 2.1
Symbol
tSS
Limit Values
min.
typ.
max.
-
20.0
-
21
Unit
Test Condition
ms
12 May 2009
CoolSET®-F3
ICE3A2065ELJ
Electrical Characteristics
4.3.5
Control Unit
Parameter
Symbol
Limit Values
min.
typ.
max.
Unit
Test Condition
VFB = 4V
Clamped VBL voltage during
Normal Operating Mode
VBLclmp
0.85
0.90
0.95
V
Blanking time voltage limit for
Comparator C3
VBKC3
3.85
4.00
4.15
V
Over Load & Open Loop Detection
Limit for Comparator C4
VFBC4
4.28
4.50
4.72
V
Active Burst Mode Level for
Comparator C5
VFBC5
1.23
1.35
1.43
V
Active Burst Mode Level for
Comparator C6a
VFBC6a
3.48
3.61
3.76
V
After Active Burst
Mode is entered
Active Burst Mode Level for
Comparator C6b
VFBC6b
2.88
3.00
3.12
V
After Active Burst
Mode is entered
Overvoltage Detection Limit
VVCCOVP
23
24
25
V
VFB = 5V
Latch Enable level at BL pin
VLE
0.07
0.1
0.2
V
> 30µs
Charging current at BL pin
IBK
5.8
8.4
10.9
µA
Charge starts after the
built-in 20ms blanking
time elapsed
Latched Thermal Shutdown1)
TjSD
130
140
150
°C
Built-in Blanking Time for
Overload Protection or enter
Active Burst Mode
tBK
-
20
-
ms
without external
capacitor at BL pin
Inhibit Time for Latch Enable
function during Start up
tIHLE
-
1.0
-
ms
Count when VCC >
18V
Spike Blanking Time before Latch off
tSpike
-
8.0
-
µs
VVCCPD
5.2
6.23
7.8
V
or Auto Restart Protection
Power Down Reset for
Latched Mode
1)
After Latched Off Mode
is entered
The parameter is not subjected to production test - verified by design/characterization. The thermal shut down
temperature refers to the junction temperature of the controller.
Note:
The trend of all the voltage levels in the Control Unit is the same regarding the deviation except VVCCOVP
and VVCCPD
Version 2.1
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12 May 2009
CoolSET®-F3
ICE3A2065ELJ
Electrical Characteristics
4.3.6
Current Limiting
Parameter
Symbol
Limit Values
min.
typ.
max.
Unit
Test Condition
dVsense / dt = 0.6V/µs
(see Figure 20)
Peak Current Limitation
(incl. Propagation Delay)
Vcsth
0.99
1.06
1.09
V
Peak Current Limitation during
Active Burst Mode
VCS2
0.27
0.31
0.37
V
Leading Edge Blanking
tLEB
-
220
-
ns
CS Input Bias Current
ICSbias
-1.5
-0.2
-
µA
Over Current Detection for
Latched Off Mode
VCS1
1.57
1.66
1.76
V
CS Spike Blanking for
Comparator C11
tCSspike
-
190
-
ns
4.3.7
VCS =0V
CoolMOS® Section
Parameter
Symbol
Limit Values
min.
typ.
max.
Unit
Test Condition
Drain Source Breakdown Voltage
V(BR)DSS
600
650
-
-
V
V
Tj = 25°C
Tj = 110°C
Drain Source On-Resistance
RDSon
-
0.92
1.93
1.05
2.22
Ω
Ω
Tj = 25°C
Tj=125°C1)
at ID = 2.0A
Effective output capacitance,
energy related
Co(er)
-
21
-
pF
VDS = 0V to 480V
Rise Time
trise
-
302)
-
ns
Fall Time
tfall
-
302)
-
ns
1)
The parameter is not subjected to production test - verified by design/characterization
2)
Measured in a Typical Flyback Converter Application
Version 2.1
23
12 May 2009
CoolSET®-F3
ICE3A2065ELJ
Temperature derating curve
5
Temperature derating curve
Safe Operating Area for ICE3A(B)2065(ELJ)
ID = f ( VDS )
parameter : D = 0, TC = 25deg.C
100
10
ID [A]
1
0.1
0.01
tp =
tp =
tp =
tp =
tp =
DC
0.001
0.1ms
1ms
10ms
100ms
1000ms
0.0001
1
10
100
1000
V DS [V]
Figure 28
Safe Operating area (SOA) curve
SOA temperature derating coefficient curve
( package dissipation ) for F3 & F2 CoolSET
SOA temperature derating coefficient [%]
120
100
80
60
40
20
0
0
20
40
60
80
100
120
140
Ambient/Case temperature Ta/Tc [deg.C]
Ta : DIP, Tc : TO220
Figure 29
Version 2.1
SOA temperature derating coefficient curve
24
12 May 2009
CoolSET®-F3
ICE3A2065ELJ
Outline Dimension
6
Outline Dimension
PG-DIP-8-6 / PG-DIP-8-9
(Plastic Dual In-Line
Outline)
Figure 30
PG-DIP-8 (PB-free Plating Plastic Dual In-Line Outline)
Dimensions in mm
Version 2.1
25
12 May 2009
CoolSET®-F3
ICE3A2065ELJ
Marking
7
Marking
Marking
Figure 31
Version 2.1
Marking
26
12 May 2009
CoolSET®-F3
ICE3A2065ELJ
Schematic for recommended PCB layout
8
Schematic for recommended PCB layout
TR1
BR1
Spark Gap 3
FUSE1
L
D21
Vo
L1
C1
Spark Gap 1
C12
R11
C11
bulk cap
X-CAP
D11
C21
GND
Spark Gap 2
D11
Spark Gap 4
N
C2
Y-CAP
R12
C3
Y-CAP
Z11
C16
CS
DRAIN
C4
Y-CAP
GND
IC11
R14
SOFTS
F3
CoolSET
VCC
GND
FB
NC
R21
R13
D13
R23
C22
C15
C13
C23
C14
IC12
F3 CoolSET schematic for recommended PCB layout
Figure 32
R22
R24
IC21
R25
Schematic for recommended PCB layout
General guideline for PCB layout design using F3 CoolSET® (refer to Figure 32):
1. “Star Ground “at bulk capacitor ground, C11:
“Star Ground “means all primary DC grounds should be connected to the ground of bulk capacitor C11
separately in one point. It can reduce the switching noise going into the sensitive pins of the CoolSET® device
effectively. The primary DC grounds include the followings.
a. DC ground of the primary auxiliary winding in power transformer, TR1, and ground of C16 and Z11.
b. DC ground of the current sense resistor, R12
c. DC ground of the CoolSET® device, GND pin of IC11; the signal grounds from C13, C14, C15 and collector
of IC12 should be connected to the GND pin of IC11 and then “star “connect to the bulk capacitor ground.
d. DC ground from bridge rectifier, BR1
e. DC ground from the bridging Y-capacitor, C4
2. High voltage traces clearance:
High voltage traces should keep enough spacing to the nearby traces. Otherwise, arcing would incur.
a. 400V traces (positive rail of bulk capacitor C11) to nearby trace: > 2.0mm
b. 600V traces (drain voltage of CoolSET® IC11) to nearby trace: > 2.5mm
3. Filter capacitor close to the controller ground:
Filter capacitors, C13, C14 and C15 should be placed as close to the controller ground and the controller pin
as possible so as to reduce the switching noise coupled into the controller.
Guideline for PCB layout design when >3KV lightning surge test applied (refer to Figure 32):
1. Add spark gap
Spark gap is a pair of saw-tooth like copper plate facing each other which can discharge the accumulated
charge during surge test through the sharp point of the saw-tooth plate.
a. Spark Gap 3 and Spark Gap 4, input common mode choke, L1:
Gap separation is around 1.5mm (no safety concern)
Version 2.1
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12 May 2009
CoolSET®-F3
ICE3A2065ELJ
Schematic for recommended PCB layout
b. Spark Gap 1 and Spark Gap 2, Live / Neutral to GROUND:
These 2 Spark Gaps can be used when the lightning surge requirement is >6KV.
230Vac input voltage application, the gap separation is around 5.5mm
115Vac input voltage application, the gap separation is around 3mm
2. Add Y-capacitor (C2 and C3) in the Live and Neutral to ground even though it is a 2-pin input
3. Add negative pulse clamping diode, D11 to the Current sense resistor, R12:
The negative pulse clamping diode can reduce the negative pulse going into the CS pin of the CoolSET® and
reduce the abnormal behavior of the CoolSET®. The diode can be a fast speed diode such as IN4148.
The principle behind is to drain the high surge voltage from Live/Neutral to Ground without passing through the
sensitive components such as the primary controller, IC11.
Version 2.1
28
12 May 2009
Total Quality Management
Qualität hat für uns eine umfassende
Bedeutung. Wir wollen allen Ihren
Ansprüchen in der bestmöglichen
Weise gerecht werden. Es geht uns also
nicht nur um die Produktqualität –
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gleichermaßen der Lieferqualität und
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Quality takes on an allencompassing
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For us it means living up to each and
every one of your demands in the best
possible way. So we are not only
concerned with product quality. We
direct our efforts equally at quality of
supply and logistics, service and
support, as well as all the other ways in
which we advise and attend to you.
Dazu gehört eine bestimmte
Geisteshaltung unserer Mitarbeiter.
Total Quality im Denken und Handeln
gegenüber Kollegen, Lieferanten und
Ihnen, unserem Kunden. Unsere
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Part of this is the very special attitude of
our staff. Total Quality in thought and
deed, towards co-workers, suppliers
and you, our customer. Our guideline is
“do everything with zero defects”, in an
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beyond your immediate workplace, and
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Unternehmensweit orientieren wir uns
dabei auch an „top“ (Time Optimized
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Published by Infineon Technologies AG
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Give us the chance to prove the best of
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