ETC IRF3205STRR

PD - 9.1304B
IRF3205S/L
HEXFET® Power MOSFET
l
l
l
l
l
l
Advanced Process Technology
Surface Mount (IRF32305S)
Low-profile through-hole (IRF3205L)
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
D
VDSS = 55V
RDS(on) = 0.008Ω
G
ID = 110A†
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible onresistance in any existing surface mount package. The
D2 Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRF3205L) is available for lowprofile applications.
D 2 Pak
T O -2 6 2
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Max.
Continuous Drain Current, VGS @ 10V…
Continuous Drain Current, VGS @ 10V…
Pulsed Drain Current …
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚…
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ…
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
110 †
80
390
3.8
200
1.3
± 20
480
59
20
5.0
-55 to + 175
Units
A
W
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (1.6mm from case )
Thermal Resistance
Parameter
RθJC
RθJA
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
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Typ.
Max.
Units
–––
–––
0.75
40
°C/W
8/25/97
IRF3205S/L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Qg
Qgs
Qgd
td(on)
tr
t d(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min.
55
–––
–––
2.0
20
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.057
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
14
100
43
70
IDSS
Drain-to-Source Leakage Current
LS
Internal Source Inductance
–––
7.5
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
4000
1300
480
V(BR)DSS
∆V(BR)DSS/∆TJ
I GSS
Max. Units
Conditions
–––
V
V GS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID =1mA…
0.008
Ω
VGS =10V, ID = 59A „
4.0
V
VDS = VGS, ID = 250µA
–––
S
V DS = 25V, I D = 59A…
25
VDS = 55V, VGS = 0V
µA
250
VDS = 44V, VGS = 0V, TJ = 150°C
100
V GS = 20V
nA
-100
VGS = -20V
170
I D = 59A
32
nC
VDS = 44V
74
VGS = 10V, See Fig. 6 and 13 „…
–––
VDD = 28V
–––
I D = 59A
ns
–––
R G = 2.5Ω
–––
RD = 0.39Ω, See Fig. 10 „
Between lead,
nH
–––
and center of die contact
–––
VGS = 0V
–––
pF
VDS = 25V
–––
ƒ = 1.0MHz, See Fig. 5…
Source-Drain Ratings and Characteristics
IS
ISM
V SD
t rr
Q rr
t on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– 110†
showing the
A
G
integral reverse
––– ––– 390
S
p-n junction diode.
––– ––– 1.3
V
TJ = 25°C, IS = 59A, VGS = 0V „
––– 110 170
ns
TJ = 25°C, IF = 59A
––– 450 680
nC di/dt = 100A/µs „…
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 11 )
‚ Starting TJ = 25°C, L = 190µH
RG = 25Ω, I AS = 59A. (See Figure 12)
… Uses IRF3205 data and test conditions
ƒ ISD ≤ 59A, di/dt ≤ 290A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
† Calculated continuous current based on maximum allowable
junction temperature; for recommended current-handling of the
package refer to Design Tip # 93-4
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
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IRF3205S/L
1000
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTT OM 4.5V
I , D ra in -to -S o u rce C u rre n t (A )
D
I , D ra in -to -S o u rce C u rre n t (A )
D
100
4.5 V
2 0µ s PU LSE W ID TH
T
TCJ == 25°C
2 5°C
10
0.1
1
10
100
4.5V
20 µs P UL SE W IDTH
100
R D S (o n ) , D ra in -to -S o u rc e O n R e si sta n ce
(N o rm a li ze d )
I D , D r ain- to-S ourc e C urre nt (A )
2.0
TJ = 2 5 °C
TJ = 1 7 5 ° C
100
10
V DS = 2 5 V
2 0 µ s P U L SE W ID TH
6
7
8
9
10
A
100
Fig 2. Typical Output Characteristics
1000
5
1
V D S , Drain-to-Source V oltage (V)
Fig 1. Typical Output Characteristics
1
T
TCJ == 175°C
17 5°C
10
0.1
A
V D S , D rain-to-S ource V oltage (V )
4
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTT OM 4.5V
TOP
TOP
10
V G S , Ga te-to-S o urce V oltage (V )
Fig 3. Typical Transfer Characteristics
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A
I D = 98 A
1.5
1.0
0.5
V G S = 10 V
0.0
-60 -40 -20
0
20
40
60
80
A
100 120 140 160 180
T J , Junction T emperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
IRF3205S/L
20
V GS
C is s
C rs s
C o ss
7000
C , C a p a c ita n c e (p F )
6000
= 0 V,
f = 1M H z
= C g s + C gd , Cds SH OR TED
= C gd
= C ds + C gd
V G S , G a te -to -S o u rc e V o lta g e (V )
8000
I D = 5 9A
V DS = 44 V
V DS = 28 V
V DS = 11 V
16
C is s
5000
12
C os s
4000
3000
2000
C rs s
8
4
1000
0
0
A
1
10
FO R TES T C IR CU IT
SEE FIG U R E 13
0
100
V D S , D rain-to-S ource Voltage (V )
60
90
120
150
A
180
Q G , Total Gate Charge (nC )
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
O PER ATION IN TH IS AR EA LIM ITE D
BY R D S(o n)
10µs
I D , D ra in C u rre n t (A )
I S D , R e v e rse D ra in C u rre n t (A )
30
TJ = 175 °C
100
T J = 2 5°C
100
1 00µs
1m s
10
10m s
VG S = 0 V
10
0.6
1.0
1.4
1.8
2.2
2.6
A
3.0
V S D , Source-to-D rain V oltage (V )
Fig 7. Typical Source-Drain Diode
Forward Voltage
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T C = 25 °C
T J = 17 5°C
S ing le Pulse
1
1
A
10
100
V D S , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
IRF3205S/L
VDS
120
VGS
LIMITED BY PACKAGE
ID , Drain Current (A)
D.U.T.
RG
100
+
-V DD
10V
80
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
60
Fig 10a. Switching Time Test Circuit
40
VDS
90%
20
0
25
50
75
100
125
TC , Case Temperature
150
175
( ° C)
10%
VGS
td(on)
Fig 9. Maximum Drain Current Vs.
Case Temperature
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
1
D = 0.50
0.20
0.1
0.01
0.00001
0.10
PDM
0.05
t1
0.02
0.01
t2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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1
IRF3205S/L
VDS
D.U.T.
RG
+
V
- DD
IAS
10 V
tp
0.01Ω
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
VDD
E A S , S in g le P u ls e A va la n c h e E n e rg y (m J)
1200
L
TO P
1000
B OTTO M
ID
24 A
4 2A
59 A
800
600
400
200
VD D = 2 5V
0
25
A
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
VDS
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
QG
12V
.2µF
.3µF
10 V
QGS
QGD
D.U.T.
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
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IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
+
V
- DS
IRF3205S/L
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
ƒ
+
‚
-
-
„
+

•
•
•
•
RG
Driver Gate Drive
P.W.
+
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Period
D=
-
V DD
P.W.
Period
VGS=10V
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14.For N-Channel HEXFETS
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ISD
*
IRF3205S/L
D2Pak Package Outline
10.54 ( .415)
10.29 ( .405)
1.40 (.055)
MAX.
-A-
1.32 (.052)
1.22 (.048)
2
1.78 (.070)
1.27 (.050)
1
10.16 (.400)
RE F .
-B -
4.69 (.185)
4.20 (.165)
6.47 (.255)
6.18 (.243)
3
15.49 (.610)
14.73 (.580)
2.79 (.110)
2.29 (.090)
2.61 (.103)
2.32 (.091)
5.28 (.208)
4.78 (.188)
3X
1.40 (.055)
1.14 (.045)
5.08 ( .200)
0.55 (.022)
0.46 (.018)
0.93 (.037)
3X
0.69 (.027)
0.25 (.010)
M
8.89 (.350)
RE F.
1.39 (.055)
1.14 (.045)
B A M
MINIMUM RECO MM ENDED F OO TP RINT
11.43 (.450)
NO TE S:
1 DIM ENS IO NS AF T ER S OLDE R DIP .
2 DIM ENS IO NING & TO LERA NCING PE R ANS I Y 14.5M, 1982.
3 CO NT RO LLING DIME NSIO N : INCH.
4 HE AT SINK & LEAD DIMEN SION S DO NO T INCLUDE BURRS.
LE AD ASS IG NM ENT S
1 - G AT E
2 - DRA IN
3 - S OU RC E
8.89 (.350)
17.78 (.700)
3.81 (.150)
2.08 (.082)
2X
Part Marking Information
D2Pak
IN TER NATION AL
REC TIFIER
L OGO
A
PART NU MBER
F53 0S
9246
9B
1M
AS SEMBLY
LOT CODE
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DATE CODE
(YYW W )
YY = YEAR
W W = W EE K
2.54 (.100)
2X
IRF3205S/L
Package Outline
TO-262 Outline
Part Marking Information
TO-262
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IRF3205S/L
Tape & Reel Information
D2Pak
TR R
1 .6 0 (.0 6 3 )
1 .5 0 (.0 5 9 )
4 .1 0 (.1 6 1)
3 .9 0 (.1 5 3)
F E E D D IR E C TIO N 1 .8 5 (.0 7 3 )
1 .6 5 (.0 6 5 )
1 .6 0 (.0 6 3)
1 .5 0 (.0 5 9)
11 .6 0 (. 45 7 )
11 .4 0 (. 44 9 )
0 .3 68 (.0 14 5 )
0 .3 42 (.0 13 5 )
15 .4 2 (.60 9 )
15 .2 2 (.60 1 )
2 4 .30 (.9 5 7)
2 3 .90 (.9 4 1)
TR L
1 0. 90 (.4 29 )
1 0. 70 (.4 21 )
1. 75 (.0 69 )
1. 25 (.0 49 )
4 .7 2 (.1 3 6)
4 .5 2 (.1 7 8)
1 6. 10 (.6 34 )
1 5. 90 (.6 26 )
FE E D D IR E C TIO N
1 3.5 0 (. 532 )
1 2.8 0 (. 504 )
2 7.4 0 (1 .079 )
2 3.9 0 (.9 41)
4
33 0.0 0
(14. 17 3)
M AX .
N O T ES :
1. C O M F O R M S T O EIA -418 .
2. C O N T R O LLIN G D IM EN SIO N : M ILLIM E T ER .
3. D IM E N S IO N M EA S U R E D @ H U B .
4. IN C LU D E S F L AN G E D IS T O R T IO N @ O U T E R ED G E.
6 0.0 0 (2 .36 2)
M IN .
26 .40 (1. 03 9)
24 .40 (.9 61 )
3
3 0.4 0 (1 .19 7)
MA X .
4
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
8/97
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