IRF IRF7606PBF

PD - 95245
IRF7606PbF
Generation V Technology
Ultra Low On-Resistance
l P-Channel MOSFET
l Very Small SOIC Package
l Low Profile (<1.1mm)
l Available in Tape & Reel
l Fast Switching
l Lead-Free
Description
HEXFET® Power MOSFET
l
l
A
D
1
8
S
2
7
D
S
3
6
D
G
4
5
D
S
VDSS = -30V
RDS(on) = 0.09Ω
Top View
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The new Micro8 package, with half the footprint area
of the standard SO-8, provides the smallest footprint
available in an SOIC outline. This makes the Micro8
an ideal device for applications where printed circuit
board space is at a premium. The low profile (<1.1mm)
of the Micro8 will allow it to fit easily into extremely thin
application environments such as portable electronics
and PCMCIA cards.
Micro8
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
VGSM
dv/dt
TJ , TSTG
Drain-Source Voltage
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
Maximum Power Dissipation„
Maximum Power Dissipation „
Linear Derating Factor
Gate-to-Source Voltage
Gate-to-Source Voltage Single Pulse tp<10µS
Peak Diode Recovery dv/dt ‚
Junction and Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
-30
-3.6
-2.9
-29
1.8
1.1
14
± 20
30
-5.0
-55 to + 150
240 (1.6mm from case)
Units
V
A
W
W
mW/°C
V
V
V/ns
°C
Thermal Resistance
Parameter
RθJA
Maximum Junction-to-Ambient „
Max.
Units
70
°C/W
All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective
only for product marked with Date Code 505 or later .
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1
5/13/04
IRF7606PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
V(BR)DSS
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
-30
–––
–––
–––
-1.0
2.3
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
-0.024
0.075
0.130
–––
–––
–––
–––
–––
–––
20
2.1
7.6
13
20
43
39
520
300
140
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = -1mA
0.09
VGS = - 10V, ID = -2.4A ƒ
Ω
0.15
VGS = -4.5V, ID = -1.2A ƒ
–––
V
VDS = VGS, ID = -250µA
–––
S
VDS = -10V, ID = -1.2A
-1.0
VDS = -24V, VGS = 0V
µA
-25
VDS = -24V, VGS = 0V, TJ = 125°C
-100
VGS = -20V
nA
100
VGS = 20V
30
ID = -2.4A
3.1
nC VDS = -24V
11
VGS = -10V, See Fig. 9 ƒ
–––
VDD = -10V
–––
ID = -2.4A
ns
–––
RG = 6.0Ω
–––
RD = 4.0Ω ƒ
–––
VGS = 0V
–––
pF
VDS = -25V
–––
ƒ = 1.0MHz, See Fig. 8
Source-Drain Ratings and Characteristics
IS
I SM
VSD
t rr
Q rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
-1.8
–––
–––
-29
–––
–––
–––
–––
43
50
-1.2
64
76
A
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = -2.4A, VGS = 0V ƒ
TJ = 25°C, IF = -2.4A
di/dt = -100A/µs ƒ
D
S
Notes:
 Repetitive rating; pulse width limited by
ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%.
‚ ISD ≤ -2.4A, di/dt ≤ -130A/µs, VDD ≤ V(BR)DSS,
„ Surface mounted on FR-4 board, t ≤
max. junction temperature. ( See fig. 10 )
TJ ≤ 150°C
2
10sec.
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IRF7606PbF
100
100
VGS
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
VGS
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
TOP
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
TOP
10
-3.0V
1
0.1
20µs PULSE WIDTH
TJ = 25°C
A
1
10
-3.0V
20µs PULSE WIDTH
TJ = 150°C
A
1
10
0.1
Fig 1. Typical Output Characteristics
10
Fig 2. Typical Output Characteristics
100
-ISD , Reverse Drain Current (A)
100
-ID , Drain-to-Source Current (A)
1
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
TJ = 25°C
TJ = 150°C
10
VDS = -10V
20µs PULSE WIDTH
1
3.0
3.5
4.0
4.5
5.0
5.5
-VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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A
6.0
10
TJ = 150°C
TJ = 25°C
1
VGS = 0V
0.1
0.4
0.6
0.8
1.0
1.2
1.4
A
1.6
-VSD , Source-to-Drain Voltage (V)
Fig 4. Typical Source-Drain Diode
Forward Voltage
3
IRF7606PbF
I D = -2.7A
RDS(on) , Drain-to-Source On Resistance ( Ω )
R DS(on) , Drain-to-Source On Resistance
(Normalized)
2.0
1.5
1.0
0.5
VGS = -10V
0.0
-60
-40
-20
0
20
40
60
80
0.3
0.1
0.0
A
100 120 140 160
0.2
0
2
4
TJ , Junction Temperature (°C)
6
8
10
, , Drain Current (A)
-I
Fig 5. Normalized On-Resistance
Vs. Temperature
Fig 6. Typical On-Resistance Vs. Drain
Current
RDS(on) , Drain-to-Source On Resistance ( Ω )
0.14
0.12
0.10
I
= -3.6A
0.08
0.06
0.04
2
6
/5
-V
10
14
A
, Gate-to-Source Voltage (V)
Fig 7. Typical On-Resistance Vs. Gate
Voltage
4
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12
IRF7606PbF
1000
-VGS , Gate-to-Source Voltage (V)
800
C, Capacitance (pF)
20
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
C oss = C ds + C gd
Ciss
600
Coss
400
Crss
200
0
1
10
100
A
I D = -2.7A
VDS = -24V
VDS = -15V
16
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 9
0
0
VDS , Drain-to-Source Voltage (V)
5
10
15
20
25
30
Q G , Total Gate Charge (nC)
Fig 9. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 8. Typical Capacitance Vs.
Drain-to-Source Voltage
Thermal Response (Z thJA )
100
D = 0.50
0.20
10
0.10
0.05
0.02
1
PDM
0.01
t1
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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A
IRF7606PbF
Micro8 Package Outline
Dimensions are shown in milimeters (inches)
LEAD ASSIGNMENTS
DIM
D
3
- B-
D D D D
8 7 6 5
3
H
E
0.25 (.010)
- A-
M
A
M
D1 D1 D2 D2
8 7 6 5
8 7 6 5
SINGLE
DUAL
1 2 3 4
1 2 3 4
1 2 3 4
S S S G
S1 G1 S2 G2
e
6X
INCHES
MIN
MILLIMETERS
MAX
MIN
MAX
A
.036
.044
0.91
1.11
A1
.004
.008
0.10
0.20
B
.010
.014
0.25
0.36
C
.005
.007
0.13
0.18
D
.116
.120
2.95
3.05
e
.0256 BASIC
0.65 BASIC
e1
.0128 BASIC
0.33 BASIC
E
.116
.120
2.95
3.05
H
.188
.198
4.78
5.03
L
.016
.026
0.41
0.66
θ
0°
6°
0°
6°
e1
RECOMMENDED FOOTPRINT
θ
1.04
( .041 )
8X
A
-CB
0.10 (.004)
A1
8X
0.08 (.003)
M
C A S
L
8X
B S
C
0.38 8X
( .015 )
8X
3.20
( .126 )
4.24
5.28
( .167 ) ( .208 )
NOTES:
1 DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
0.65 6X
( .0256 )
2 CONTROLLING DIMENSION : INCH.
3 DIMENSIONS DO NOT INCLUDE MOLD FLASH.
Micro8 Part Marking Information
EXAMPLE: THIS IS AN IRF 7501
LOT CODE (XX)
DATE CODE (YW) - S ee table below
Y = YEAR
W = WEEK
P = DES IGNATES LEAD - FREE
PRODUCT (OPTIONAL)
PART NUMBER
WW = (1-26) IF PRECEDED BY LAS T DIGIT OF CALENDAR YEAR
6
YEAR
Y
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
1
2
3
4
5
6
7
8
9
0
WORK
WEEK
WW = (27-52) IF PRECEDED BY A LETT ER
W
YEAR
Y
01
02
03
04
A
B
C
D
24
25
26
X
Y
Z
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
A
B
C
D
E
F
G
H
J
K
WORK
WEEK
W
27
28
29
30
A
B
C
D
50
51
52
X
Y
Z
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IRF7606PbF
Micro8 Tape & Reel Information
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. OUTLINE CONFORMS TO EIA-481 & EIA-541.
2. CONTROLLING DIMENSION : MILLIMETER.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.05/04
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