ETC IRHM93230

Provisional Data Sheet No. PD-9.1395
IRHM9230
REPETETIVE AVALANCHE AND dv/dt RATED
P-CHANNEL
HEXFET® TRANSISTOR
RAD HARD
-200 Volt, 0.8Ω
Ω , RAD HARD HEXFET
International Rectifier’s P-Channel RAD HARD technology
HEXFETs demonstrate excellent threshold voltage stability
and breakdown voltage stability at total radiation doses as
high as 105 Rads (Si). Under identical pre- and post-radiation test conditions, International Rectifier’s P-Channel RAD
HARD HEXFETs retain identical electrical specifications
up to 1 x 105 Rads (Si) total dose. No compensation in gate
drive circuitry is required. These devices are also capable
of surviving transient ionization pulses as high as 1 x 1012
Rads (Si)/Sec, and return to normal operation within a few
microseconds. Single Event Effect (SEE) testing of International Rectifier P-Channel RAD HARD HEXFETs has
demonstrated virtual immunity to SEE failure. Since the
P-Channel RAD HARD process utilizes International
Rectifier’s patented HEXFET technology, the user can expect the highest quality and reliability in the industry.
P-Channel RAD HARD HEXFET transistors also feature all
of the well-established advantages of MOSFETs, such as
voltage control,very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
They are well-suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers and high-energy pulse circuits in space and weapons environments.
Product Summary
Part Number
BVDSS
RDS(on)
ID
IRHM9230
-200V
0.8Ω
-6.5A
Features:
■
■
■
■
■
■
■
■
■
■
■
■
Radiation Hardened up to 1 x 105 Rads (Si)
Single Event Burnout (SEB) Hardened
Single Event Gate Rupture (SEGR) Hardened
Gamma Dot (Flash X-Ray) Hardened
Neutron Tolerant
Identical Pre- and Post-Electrical Test Conditions
Repetitive Avalanche Rating
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Eyelets
■ Electrically Isolated
Pre-Radiation
Absolute Maximum Ratings
Parameter
IRHM9230
Units
-6.5
-4.1
-26
A
VGS
EAS
I AR
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current 
75
0.2
±20
330
-6.5
W
W/K …
V
mJ
A
EAR
dv/dt
Repetitive Avalanche Energy‚
Peak Diode Recovery dv/dt ƒ
7.5
-5.0
V/ns
TJ
TSTG
Operating Junction
Storage Temperature Range
I D @ VGS = -12V, TC = 25°C Continuous Drain Current
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current 
PD @ TC = 25°C
Lead Temperature
Weight
Notes: See page 4
mJ
-55 to 150
oC
300 (0.063 in. (1 .6mm) from case for 10s)
9.3 (typical)
g
IRHM9230 Device
Pre-Radiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Min.
Typ. Max. Units
-200
—
—
-0.10
—
—
-2.0
2.2
—
—
—
—
—
—
—
—
—
—
V
V/°C
Test Conditions
VGS = 0V, I D = -1.0 mA
Reference to 25°C, ID = -1.0 mA
0.8
VGS = -12V, I D = -4.1A
„
0.92
Ω
VGS = -12V, I D = -6.5A
-4.0
V
VDS = VGS, ID = -1.0 mA
— S( )
VDS > -15V, I DS = -6.5A„
-25
µA VDS = 0.8 x Max. Rating,VGS = 0V
-250
VDS = 0.8 x Max. Rating
VGS = 0V, TJ = 125°C
-100
VGS = -20V
nA
100
VGS = 20V
35
VGS = -12V, I D = -6.5A
nC
10
VDS = Max. Rating x 0.5
25
50
VDD = -100V, ID = -6.5A, RG = 2.35Ω
90
ns
90
90
Measured from the
Modified MOSFET
—
Ω
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
∆BVDSS/∆TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source
On-State Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
5.0
LS
Internal Source Inductance
—
15
—
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
1100
310
55
—
—
—
nH
drain lead, 6mm (0.25
in.) from package to
center of die.
symbol showing the
internal inductances.
Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.
pF
VGS = 0V, VDS = -25V
f = 1.0 MHz
Source-Drain Diode Ratings and Characteristics
Parameter
IS
I SM
VSD
t rr
QRR
t on
Continuous Source Current
(Body Diode)
Pulse Source Current
(Body Diode) ➀
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
—
—
-6.5
—
—
-26
A
Test Conditions
Modified MOSFET symbol
showing the integral Reverse
p-n junction rectifier.
—
—
-5.0
V
Tj = 25°C, IS = -6.5A, VGS = 0V „
—
—
400
ns
Tj = 25°C, IF = -6.5A, di/dt ≤ -100 A/µs
—
—
3.0
µC
VDD ≤ -50V „
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJA
Junction-to-Case
Junction-to-Ambient
Notes: See page 4
Min. Typ. Max. Units
—
—
—
30
1.67
K/W …
—
Test Conditions
IRHM9230 Device
Radiation Characteristics
Radiation Performance of P-Channel Rad
Hard HEXFETs
International Rectifier Radiation Hardened HEXFETs
are tested to verify their hardness capability. The
hardness assurance program at International Rectifier
uses two radiation environments.
Every manufacturing lot is tested in a low dose rate
(total dose) environment per MlL-STD-750, test method
1019. International Rectifier has imposed a standard
gate voltage of -12 volts per note 6 and a VDSS bias
condition equal to 80% of the device rated voltage per
note 7. Pre- and post-radiation limits of the devices
irradiated to 1 x 105 Rads (Si) are identical and are
presented in Table 1. The values in Table 1 will be met
for either of the two low dose rate test circuits that are
used.
Table 1. Low Dose Rate †‡
Units
Test Conditions Š
min.
max.
-200
-2.0
—
—
—
—
—
-4.0
-100
100
-25
0.8
nA
µA
Ω
VGS = 0V, ID = -1.0 mA
VGS = VDS, ID = -1.0 mA
VGS = -20V
VGS = 20V
VDS = 0.8 x Max Rating, VGS = 0V
VGS = -12V, ID = -4.1A
—
-5.0
V
TC = 25°C, IS = -6.5A,VGS = 0V
V
ˆ
Table 2. High Dose Rate
1011 Rads (Si)/sec1012 Rads (Si)/sec
Parameter
VDSS
International Rectifier radiation hardened P-Channel
HEXFETs are considered to be neutron-tolerant, as stated
in MIL-PRF-19500 Group D. International Rectifier PChannel radiation hardened HEXFETs have been
characterized in heavy ion Single Event Effects
environment and the results are shown in Table 3.
IRHM9230
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage „
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source „
On-State Resistance One
Diode Forward Voltage „
VSD
High dose rate testing may be done on a special
request basis, using a dose rate up to 1 x 1012 Rads
(Si)/Sec.
100K Rads (Si)
Parameter
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)1
Both pre- and post-radiation performance are tested
and specified using the same drive circuitry and test
conditions in order to provide a direct comparison. It
should be noted that at a radiation level of 1 x 105
Rads (Si), no change in limits are specified in DC
parameters.
Min. Typ Max. Min.Typ. Max. Units
Drain-to-Source Voltage
—
IPP
di/dt
L1
—
—
1
Table 3. Single Event Effects
—
-160
-100 —
-800 —
—
—
—
—
-160
— -100
— -160
20 —
—
—
Test Conditions
V
Applied drain-to-source voltage
during gamma-dot
A
Peak radiation induced photo-current
A/µsec Rate of rise of photo-current
µH
Circuit inductance required to limit di/dt
‰
Parameter
Typ.
Units
Ion
LET (Si)
(MeV/mg/cm2)
Fluence
(ions/cm2)
Range
(µm)
VDS Bias
(V)
VGS Bias
(V)
BV DSS
-200
V
Ni
28
1 x 105
~41
-200
5
IRHM9230 Device
 Repetitive Rating; Pulse width limited by
maximum junction temperature.
Refer to current HEXFET reliability report.
‚ @ VDD = -50V, Starting TJ = 25°C,
EAS = [0.5 * L * (IL2) * [BVDSS/(BVDSS-VDD)]
Peak IL = -6.5A, VGS = -12V, 25 ≤ RG ≤ 200 Ω
ƒ
„
ISD ≤ -6.5A, di/dt ≤ -140 A/µs,
VDD ≤ BVDSS, TJ ≤ 150°C
Suggested RG = 2.35Ω
Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
… K/W = °C/W
W/K = W/°C
Radiation Characteristics
† Total Dose Irradiation with VGS Bias.
-12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019.
‡ Total Dose Irradiation with VDS Bias.
VDS = 0.8 rated BVDSS (pre-radiation)
applied and VGS = 0 during irradiation per
MlL-STD-750, method 1019.
ˆThis test is performed using a flash x-ray
source operated in the e-beam mode (energy
~2.5 MeV), 30 nsec pulse.
‰ Process characterized by independent laboratory.
Š All Pre-Radiation and Post-Radiation test
conditions are identical to facilitate direct
comparison for circuit applications.
Case Outline and Dimensions
Optional leadforms for outline TO-254
LEGEND
1 DRAIN
2 SOURCE
3 GATE
LEGEND
1 DRAIN
2 SOURCE
3 GATE
NOTES: 1 DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982
2 ALL DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES)
Conforms to JEDEC Outline TO-254AA
Dimensions in Millimeters and (Inches)
NOTES:
1 DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M-1982
2 ALL DIMENSIONS ARE SHOWN IN
MILLIMETERS (INCHES)
3 LEADFORM IS AVAILABLE IN EITHER
ORIENTATION:
Example: 3.1 IRHM7160D
3.2 IRHM7160U
CAUTION
BERYLLIA WARNING PER MIL-PRF-19500
Packages containing beryllia shall not be ground, sandblasted,
machined, or have other operations performed on them which
will produce beryllia or beryllium dust. Furthermore, beryllium oxide
packages shall not be placed in acids that will produce fumes
containing beryllium.
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
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http://www.irf.com/
Data and specifications subject to change without notice.
4/96