IRF IRHNJ67134

PD-96931A
RADIATION HARDENED
POWER MOSFET
SURFACE-MOUNT (SMD-0.5)
IRHNJ67134
150V, N-CHANNEL
TECHNOLOGY
Product Summary
Part Number Radiation Level
IRHNJ67134 100K Rads (Si)
RDS(on)
0.088Ω
ID
19A
IRHNJ63134
0.088Ω
19A
300K Rads (Si)
SMD-0.5
International Rectifier’s R6TM technology provides
superior power MOSFETs for space applications.
These devices have improved immunity to Single
Event Effect (SEE) and have been characterized for
useful performance with Linear Energy Transfer
(LET) up to 90MeV/(mg/cm2). Their combination of
very low RDS(on) and faster switching times reduces
power loss and increases power density in today’s
high speed switching applications such as DC-DC
converters and motor controllers. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, ease of paralleling
and temperature stability of electrical parameters.
Features:
n
n
n
n
n
n
n
n
n
n
Low RDS(on)
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
Units
19
12
76
75
0.6
±20
60
19
7.5
8.6
-55 to 150
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
300 (for 5s)
1.0 (Typical)
g
For footnotes refer to the last page
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1
02/03/05
IRHNJ67134
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Min
Drain-to-Source Breakdown Voltage
150
—
—
V
—
0.18
—
V/°C
—
—
0.088
Ω
2.0
13
—
—
—
—
—
—
4.0
—
10
25
V
S( )
∆BV DSS /∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
g fs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Typ Max Units
µA
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0
100
-100
50
15
18
20
30
35
25
—
Ciss
C oss
C rss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Gate Resistance
—
—
—
—
1570
240
5.2
1.08
—
—
—
—
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
VGS = 12V, ID = 12A
Ã
Ω
BVDSS
Parameter
nA
nC
VDS = VGS, ID = 1.0mA
VDS = 15V, IDS = 12A Ã
VDS = 120V ,VGS=0V
VDS = 120V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS = 12V, ID = 19A
VDS = 75V
VDD = 75V, ID = 19A,
VGS = 12V, RG = 7.5Ω
ns
nH
Measured from the center of
drain pad to center of source pad
pF
VGS = 0V, VDS = 25V
f = 1.0MHz
Ω
f = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
ISM
VSD
trr
Q RR
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ton
Forward Turn-On Time
—
—
—
—
—
—
—
—
—
—
19
76
1.2
300
2.6
Test Conditions
A
V
ns
µC
Tj = 25°C, IS = 19A, VGS = 0V Ã
Tj = 25°C, IF = 19A, di/dt ≤ 100A/µs
VDD ≤ 25V Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
Junction-to-Case
Min Typ Max Units
—
—
1.67
Test Conditions
°C/W
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2
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Radiation Characteristics
Pre-Irradiation
IRHNJ67134
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
VSD
Up to 300K Rads (Si)
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source „
On-State Resistance (TO-3)
Static Drain-to-Sourcee „
On-State Resistance (SMD-0.5)
„
Diode Forward Voltage
Units
Test Conditions ˆ
Min
Max
150
2.0
—
—
—
—
4.0
100
-100
10
µA
VGS = 0V, ID = 1.0mA
VGS = VDS , ID = 1.0mA
VGS = 20V
VGS = -20V
VDS = 120V, VGS= 0V
—
0.092
Ω
VGS = 12V, ID = 12A
—
0.088
Ω
VGS = 12V, ID = 12A
—
1.2
V
VGS = 0V, ID = 19A
V
nA
Part numbers IRHNJ67134 and IRHNJ63134
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Tables.
Tables for Single Event Effect Safe Operating Area
Ion Kr
Ion Xe
Ion Au
LET = 39 MeV/(mg/cm2)
Energy = 312 MeV
Range = 39 µm
VGS Bias
VDS Bias
(Volts)
(Volts)
0
150
-5
150
-10
150
-15
150
-20
150
LET = 59 MeV/(mg/cm2)
Energy = 825 MeV
Range = 66 µm
VGS Bias
VDS Bias
(Volts)
(Volts)
0
150
-5
150
-9
150
-10
140
-11
50
-15
40
LET = 90 MeV/(mg/cm2)
Energy = 1480 MeV
Range = 80 µm
VGS Bias
VDS Bias
(Volts)
(Volts)
0
50
-5
50
-10
30
180
150
VDS
120
Kr
90
Xe
Au
60
30
0
0
-5
-10
-15
-20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHNJ67134
1000
VGS
TOP
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
100
10
1
5.0V
60µs PULSE WIDTH
Tj = 25°C
100
10
5.0V
1
60µs PULSE WIDTH
Tj = 150°C
0.1
0.1
0.1
1
10
0.1
100
Fig 1. Typical Output Characteristics
10
100
Fig 2. Typical Output Characteristics
3.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
100
ID, Drain-to-Source Current (A)
1
VDS , Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
T J = 150°C
T J = 25°C
10
VDS = 50V
60µs PULSE
15 WIDTH
ID = 19A
2.5
2.0
1.5
1.0
0.5
VGS = 12V
0.0
1.0
5
6
7
8
9
10
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
1000
Pre-Irradiation
-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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Pre-Irradiation
2800
20
VGS = 0V,
f = 1 MHz
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
2000
Ciss
1600
Coss
1200
800
Crss
400
16
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
1
10
100
0
10
20
30
40
50
60
QG, Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
ID, Drain-to-Source Current (A)
100
ISD, Reverse Drain Current (A)
VDS = 120V
VDS = 75V
VDS = 30V
ID = 19A
VGS, Gate-to-Source Voltage (V)
2400
C, Capacitance (pF)
IRHNJ67134
TJ = 150°C
10
T J = 25°C
1
VGS = 0V
0.4
0.6
0.8
1.0
1.2
VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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100
10
100µs
1ms
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
0.1
0.2
OPERATION IN THIS AREA
LIMITED BY R DS(on)
1.4
1
10ms
10
100
1000
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5
IRHNJ67134
Pre-Irradiation
20
VGS
16
ID, Drain Current (A)
RD
VDS
D.U.T.
RG
12
+
-V DD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
8
Fig 10a. Switching Time Test Circuit
4
VDS
90%
0
25
50
75
100
125
150
T C , Case Temperature (°C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
1 D = 0.50
0.20
0.10
PDM
0.05
0.1
0.02
0.01
0.01
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHNJ67134
15V
L
VDS
D.U.T.
RG
VGS
20V
IAS
DRIVER
+
- VDD
0.01Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
A
EAS , Single Pulse Avalanche Energy (mJ)
100
TOP
80
BOTTOM
ID
19A
12A
8.5A
60
40
20
0
25
V(BR)DSS
50
75
100
125
150
Starting T J , Junction Temperature (°C)
tp
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I AS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
QG
12 V
QGS
.3µF
D.U.T.
QGD
+
V
- DS
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
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12V
.2µF
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
7
IRHNJ67134
Pre-Irradiation
Footnotes:
À Repetitive Rating; Pulse width limited by
maximum junction temperature.
Á VDD = 25V, starting TJ = 25°C, L= 0.33 mH
Peak IL =19A, VGS = 12V
 ISD ≤ 19A, di/dt ≤ 673A/µs,
VDD ≤ 150V, TJ ≤ 150°C
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with VGS Bias.
12 volt VGS applied and V DS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Å Total Dose Irradiation with VDS Bias.
120 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions — SMD-0.5
PAD ASSIGNMENTS
1 = DRAIN
2 = GATE
3 = SOURCE
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TAC Fax: (310) 252-7903
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Data and specifications subject to change without notice. 02/2005
8
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