IRF IRK430

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Bulletin I27400
IRK.430.. SERIES
SUPER MAGN-A-PAK TM Power Modules
THYRISTOR / DIODE and
THYRISTOR / THYRISTOR
Features
430 A
High current capability
3000 VRMS isolating voltage with non-toxic substrate
High surge capability
High voltage ratings up to 2000V
Industrial standard package
UL recognition pending
Typical Applications
Motor starters
DC motor controls - AC motor controls
Uninterruptable power supplies
Wind miles
Major Ratings and Characteristics
Parameters
IRK.430..
Units
IT(AV) or I F(AV)
430
A
82
°C
877
A
82
°C
ITSM or I FSM @ 50Hz
15.7
KA
@ 60Hz
16.4
KA
@ 50Hz
1232
KA2s
@ 60Hz
1125
KA2s
12320
KA2 √s
1600 to 2000
V
@ TC
IT(RMS)
@ TC
I2t
I2√t
V DRM/VRRM range
T STG
range
- 40 to 150
°C
TJ
range
- 40 to 130
°C
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1
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IRK.430.. Series
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number
IRK.430..
Voltage
VRRM , maximum repetitive
V RSM , maximum non-
IRRM max.
Code
peak reverse voltage
repetitive peak rev. voltage
@ TJ = TJ max.
V
V
mA
16
1600
1700
18
1800
1900
20
2000
2100
100
On-state Conduction
Parameter
IRK.430..
Units Conditions
IT(AV)
Maximum average on-state current
430
A
IF(AV)
@ Case temperature
82
°C
IT(RMS)
Maximum RMS on-state current
877
A
ITSM
Maximum peak, one-cycle,
15.7
KA
IFSM
non-repetitive surge current
I2t
Maximum I 2t for fusing
I √t
Maximum I √t for fusing
2
180° conduction, half sine wave @ TC = 82°C
t = 10ms
No voltage
16.4
t = 8.3ms
reapplied
13.2
t = 10ms
100% VRRM
13.8
t = 8.3ms
reapplied
Sinusoidal half wave,
t = 10ms
No voltage
Initial T J = T J max.
1125
t = 8.3ms
reapplied
871
t = 10ms
100% VRRM
t = 8.3ms
reapplied
1232
KA2s
795
2
180° conduction, half sine wave
12320
VT(TO)1 Low level value of threshold voltage
0.96
VT(TO)2 High level value of threshold voltage
1.06
KA √s t = 0.1 to 10ms, no voltage reapplied
2
V
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
(I > π x IT(AV)), TJ = TJ max.
rt1
Low level value of on-state slope resistance
0.51
mΩ
rt2
High level value of on-state slope resistance
0.45
VTM
Maximum on-state or forward
1.65
V
VFM
voltage drop
IH
Maximum holding current
500
mA
IL
Typical latching current
1000
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
(I > π x IT(AV)), TJ = TJ max.
Ipk = 1500A, TJ = 25°C, tp = 10ms sine pulse
TJ = 25°C, anode supply 12V resistive load
Switching
Parameter
di/dt
Maximum rate of rise of turned-on
IRK.430..
Units Conditions
1000
A/µs
TJ = TJ max., ITM = 400A, VDRM applied
current
td
Typical delay time
2.0
µs
Gate current 1A, di g/dt = 1A/µs
Vd = 0.67% VDRM , TJ = 25°C
tq
Typical turn-off time
200
µs
ITM = 750A, TJ = TJ max, di/dt = -60A/µs,
VR = 50V, dv/dt = 20V/µs, Gate 0 V 100Ω
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IRK.430.. Series
Blocking
Parameter
dv/dt
IRK.430..
Maximum critical rate of rise of off-state
Units Conditions
1000
V/µs
T J = 130°C., linear to VD = 80% VDRM
voltage
VINS
RMS isolation voltage
3000
V
IRRM
Maximum peak reverse and off-state
100
mA
IDRM
leakage current
t=1s
T J = TJ max., rated VDRM/V RRM applied
Triggering
Parameter
IRK.430..
Units Conditions
PGM
Maximum peak gate power
10
W
PG(AV)
Maximum peak average gate power
2.0
W
TJ = TJ max., tp < 5ms
TJ = TJ max., f = 50Hz, d% = 50
+ I GM
Maximum peak positive gate current
3.0
A
TJ = TJ max., tp < 5ms
+ V GM
Maximum peak positive gate voltage
20
V
- VGM
Maximum peak negative gate voltage
5.0
V
IGT
Max. DC gate current required to trigger
200
mA
TJ = 25°C Vak 12V
VGT
DC gate voltage required to trigger
3.0
V
TJ = 25°C Vak 12V
IGD
DC gate current not to trigger
10
mA
VGD
DC gate voltage not to trigger
0.25
V
TJ = TJ max.
Thermal and Mechanical Specifications
Parameter
IRK.430..
TJ
Max. junction operating temperature range
- 40 to 130
Tstg
Max. storage temperature range
- 40 to 150
RthJC
Max. thermal resistance, junction to
Units Conditions
°C
0.065
K/W
0.02
K/W
6-8
Nm
Per junction, DC operation
case
RthC-hs Max. thermal resistance, case to
heatsink
T
Mounting torque ± 10% SMAP to heatsink
busbar to SMAP
wt
Approximate weight
Case style
12 - 15
1500
g
Super Magn-a-Pak
To Order
3
A mounting compound is recommended and the
torque should be rechecked after a period of 3 hours
to allow for the spread of the compound
See outline table
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IRK.430.. Series
∆RthJC Conduction
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)
Conduction angle
Sinusoidal conduction Rectangular conduction
180°
0.009
0.006
120°
0.011
0.011
90°
0.014
0.015
60°
0.021
0.022
30°
0.037
0.038
Units
Conditions
K/W
TJ = TJ max.
Ordering Information Table
Device Code
IRK
T
430
1
2
3
-
20
4
1
-
Module type
2
-
Circuit configuration (See Circuit Configurations Table)
3
-
Current rating
4
-
Voltage code: Code x 100 = V RRM (See Voltage Ratings Table)
Circuit Configurations Table
IRKT
IRKH
IRKL
1
1
1
~
+
~
+
2
2
3 -
3 -
~
+
2
4(K1) 7(K2)
4(K1)
3 7(K2)
5(G1) 6(G2)
5(G1)
6(G2)
To Order
4
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IRK.430.. Series
Outline Table
All dimensions in millimeters (inches)
To Order
5