IXBK55N300 IXBX55N300 High Voltage, High Gain BiMOSFETTM VCES IC110 = 3000V = 55A ≤ 3.2V VCE(sat) Monolithic Bipolar MOS Transistor TO-264 (IXBK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 3000 V VGES Continuous ±25 V VGEM Transient ±35 V IC25 ILRMS IC110 ICM TC TC TC TC 130 120 55 600 A A A A SSOA VGE = 15V, TVJ = 125°C, RG = 2Ω ICM = 110 A (RBSOA) Clamped Inductive Load TSC (SCSOA) VGE = 15V, TJ = 125°C, RG = 10Ω, VCE = 1250V, Non-Repetitive PC TC = 25°C = 25°C ( Chip Capability ) = 25°C ( Lead RMS Limit ) = 110°C = 25°C, 1ms @0.8 • VCES TJ TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10 Md FC Mounting Torque (TO-264 ) Mounting Force (PLUS247 ) Weight TO-264 PLUS247 G μs 625 W -55 ... +150 °C Features 150 °C z -55 ... +150 °C z 300 260 °C °C 1.13/10 20..120/4.5..27 Nm/lb.in. N/lb. 10 6 g g z z z IC = 1mA, VGE = 0V 3000 VGE(th) IC = 4mA, VCE = VGE 3.0 ICES VCE = VCES, VGE = 0V IGES VCE = 0V, VGE = ± 25V VCE(sat) IC z V 5.0 V 50 μA TJ = 125°C = 55A, VGE = 15V, Note 1 TJ = 125°C © 2011 IXYS CORPORATION, All Rights Reserved 3 mA ±200 nA 3.2 V V Tab E E = Emitter Tab = Collector High Blocking Voltage International Standard Packages Low Conduction Losses High Current Handling Capability MOS Gate Turn-On - Drive Simplicity Easy to Mount Space Savings High Power Density Applications z z z z 2.7 3.3 C Advantages z Characteristic Values Min. Typ. Max. BVCES G G = Gate C = Collector z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Tab PLUS247 (IXBX) 10 TJM Tstg G C E Uninterruptible Power Supplies (UPS) Switch-Mode and Resonant-Mode Power Supplies Capacitor Discharge Circuits Laser Generators DS100158A(11/11) IXBK55N300 IXBX55N300 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfS Characteristic Values Min. Typ. Max. IC = 55A, VCE = 10V, Note 1 32 TO-264 Outline 50 S 7300 pF 275 pF Cres 83 pF Qg 335 nC Cies Coes Qge VCE = 25V, VGE = 0V, f = 1MHz IC = 55A, VGE = 15V, VCE = 1000V Qgc td(on) tr td(off) tf td(on) tr td(off) tf Resistive Switching Times, TJ = 25°C IC = 110A, VGE = 15V VCE = 1250V, RG = 2Ω Resistive Switching Times, TJ = 125°C IC = 110A, VGE = 15V VCE = 1250V, RG = 2Ω 47 nC 130 nC 54 ns 307 ns 230 ns 268 ns 52 ns 585 ns 215 ns 260 ns RthJC 1 - GATE 2,4 - COLLECTOR 3 - EMITTER 0.20 °C/W RthCS 0.15 °C/W PLUS 247TM Outline Reverse Diode Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max VF IF = 55A, VGE = 0V, Note 1 2.5 V trr IF = 28A, VGE = 0V, -diF/dt = 100A/μs 1.9 μs IRM VR = 100V, VGE = 0V 54 A 1 - GATE 2 - COLLECTOR 3 - EMITTER Dim. Note 1: Pulse Test, t ≤ 300μs, Duty Cycle, d ≤ 2%. Additional provisions for lead-to-lead isolation are required at VCE >1200V. 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 Inches Min. Max. A A1 A2 4.83 2.29 1.91 5.21 2.54 2.16 .190 .090 .075 .205 .100 .085 b b1 b2 1.14 1.91 2.92 1.40 2.13 3.12 .045 .075 .115 .055 .084 .123 C D E e L L1 Q R IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 Millimeter Min. Max. 6,404,065 B1 6,534,343 6,583,505 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXBK55N300 IXBX55N300 Fig. 2. Extended Output Characteristics @ T J = 25ºC Fig. 1. Output Characteristics @ T J = 25ºC 300 120 VGE = 25V 20V 15V 250 200 80 IC - Amperes IC - Amperes 100 VGE = 25V 20V 15V 10V 60 10V 150 40 100 20 50 5V 5V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 0 2 3 4 5 6 VCE - Volts Fig. 3. Output Characteristics @ T J = 125ºC Fig. 4. Dependence of VCE(sat) on Junction Temperature 120 1.8 VGE = 25V 20V 15V 10V 40 I 1.4 C 125 150 = 110A 1.2 I C = 55A 1.0 I 20 8 VGE = 15V 80 60 7 1.6 VCE(sat) - Normalized 100 IC - Amperes 1 VCE - Volts C = 27.5A 0.8 5V 0 0.6 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 -50 -25 0 VCE - Volts 25 50 75 100 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 180 5.5 160 TJ = 25ºC 5.0 140 4.0 I C IC - Amperes VCE - Volts 4.5 = 110A 3.5 100 80 TJ = 125ºC 25ºC - 40ºC 60 55A 3.0 120 40 2.5 20 27.5A 0 2.0 5 6 7 8 9 10 11 VGE - Volts © 2011 IXYS CORPORATION, All Rights Reserved 12 13 14 15 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 VGE - Volts 7.0 7.5 8.0 8.5 9.0 IXBK55N300 IXBX55N300 Fig. 7. Transconductance Fig. 8. Forward Voltage Drop of Intrinsic Diode 180 100 TJ = - 40ºC 90 160 140 70 25ºC 60 125ºC 120 IF - Amperes g f s - Siemens 80 50 40 TJ = 25ºC 100 TJ = 125ºC 80 60 30 40 20 20 10 0 0 0 20 40 60 80 100 120 140 160 180 200 0.4 0.6 0.8 1.0 1.2 1.4 Fig. 9. Gate Charge 1.8 2.0 2.2 2.4 2.6 2.8 3.0 Fig. 10. Capacitance 16 100,000 f = 1 MHz VCE = 1000V 14 I C = 55A Capacitance - PicoFarads I G = 10mA 12 VGE - Volts 1.6 VF - Volts IC - Amperes 10 8 6 4 10,000 Cies 1,000 Coes 100 Cres 2 10 0 0 50 100 150 200 250 300 0 350 5 10 15 20 25 30 35 40 VCE - Volts QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Reverse-Bias Safe Operating Area 1 120 100 0.1 Z(th)JC - ºC / W IC - Amperes 80 60 40 0.01 TJ = 125ºC 20 0 200 RG = 2Ω dv / dt < 10V / ns 600 1000 1400 1800 2200 2600 3000 VCE - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.001 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXBK55N300 IXBX55N300 Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 700 600 VCE = 1250V 500 I C = 220A 400 I C TJ = 125ºC t r - Nanoseconds t r - Nanoseconds 700 RG = 2Ω , VGE = 15V 600 Fig. 14. Resistive Turn-on Rise Time vs. Collector Current = 110A 500 RG = 2Ω , VGE = 15V VCE = 1250V 400 TJ = 25ºC 300 300 200 200 25 35 45 55 65 75 85 95 105 115 125 40 60 80 100 TJ - Degrees Centigrade 720 VCE = 1250V td(on) - - - - 80 620 70 I C = 110A 580 560 3 4 5 6 7 8 9 10 11 12 13 14 280 220 I C = 110A 270 200 260 250 160 50 240 140 40 230 25 15 35 45 55 300 300 240 280 220 260 200 240 180 160 TJ = 125ºC, 25ºC 200 140 95 105 115 120 125 160 180 IC - Amperes © 2011 IXYS CORPORATION, All Rights Reserved 200 140 220 td(off) - - - - 600 TJ = 125ºC, VGE = 15V VCE = 1250V 320 520 I C = 110A 300 440 280 360 I C = 220A 260 280 240 200 220 120 2 3 4 5 6 7 8 9 10 RG - Ohms 11 12 13 14 15 t d(off) - Nanoseconds 260 120 tf 280 VCE = 1250V 100 85 680 340 t d(off) - Nanoseconds t f - Nanoseconds td(off) - - - - 320 80 75 360 t f - Nanoseconds tf RG = 2Ω, VGE = 15V 60 65 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 320 40 180 I C = 220A 60 TJ - Degrees Centigrade 380 220 260 240 Fig. 17. Resistive Turn-off Switching Times vs. Collector Current 340 280 290 RG - Ohms 360 220 300 td(off) - - - - VCE = 1250V t f - Nanoseconds t r - Nanoseconds I C = 220A t d(on) - Nanoseconds 90 2 200 RG = 2Ω, VGE = 15V 300 100 660 600 tf 310 110 TJ = 125ºC, VGE = 15V 640 180 t d(off) - Nanoseconds 680 160 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 320 120 tr 140 IC - Amperes Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 700 120 IXBK55N300 IXBX55N300 Fig. 19. Forward-Bias Safe Operating Area Fig. 20. Forward-Bias Safe Operating Area @ T C = 25ºC @ T C = 75ºC 1000 1000 VCE(sat) Limit VCE(sat) Limit 100 100 25µs 25µs 10 ID - Amperes ID - Amperes 100µs 1ms 1 100µs 10 1ms 1 10ms TJ = 150ºC 0.1 100ms DC TC = 25ºC 100ms TC = 75ºC Single Pulse Single Pulse 0.01 10ms TJ = 150ºC 0.1 DC 0.01 1 10 100 1,000 10,000 VDS - Volts 1 10 100 1,000 10,000 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: B_55N300 (8T) 11-03-11-C