Low VCE(sat) High speed IGBT IXGH 25 N120 IXGH 25 N120A Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V I C25 TC = 25°C 50 A I C90 TC = 90°C 25 A I CM TC = 25°C, 1 ms 100 A SSOA (RBSOA) VGE = 15 V, T VJ = 125°C, RG = 33 Ω Clamped inductive load, L = 100 µH ICM = 50 @ 0.8 VCES A PC TC = 25°C 200 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TJ Md Mounting torque (M3) 1.13/10 Nm/lb.in. VCES IC25 VCE(sat) 1200 V 1200 V 50 A 50 A 3V 4V TO-247 AD G C G = Gate, E = Emitter, E C = Collector, TAB = Collector Features International standard package JEDEC TO-247 AD 2nd generation HDMOSTM process Low VCE(sat) - for low on-state conduction losses MOS Gate turn-on - drive simplicity l Weight Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s 6 g 300 °C l l l Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Applications AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies Capacitor discharge systems Solid state relays l l l BVCES IC = 3 mA, VGE = 0 V VGE(th) IC = 250 µA, VCE = VGE ICES VCE = 0.8 • VCES VGE = 0 V I GES VCE = 0 V, VGE = ±20 V 1200 V l l 2.5 TJ = 25°C TJ = 125°C 6 V 250 1 µA mA ±100 nA l l Advantages Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) High power density l VCE(sat) IC = IC90, VGE = 15 V © 1996 IXYS All rights reserved 25N120 25N120A 3 4 V V l 92783D (3/96) IXGH 25N120 IXGH 25N120A Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs I C = I C90; VCE = 10 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % 8 Cies Coes 15 S 2750 pF 200 pF 50 pF VCE = 25 V, VGE = 0 V, f = 1 MHz Cres Qg Q ge IC = IC90, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff 130 180 nC 25 50 nC 55 90 nC Inductive load, TJ = 25°°C 100 ns IC = IC90, VGE = 15 V, L = 100 µH, VCE = 0.8 VCES , RG = Roff = 33 Ω 250 ns Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG 650 1000 ns 25N120 25N120A 700 600 800 ns ns 25N120A 11 mJ 100 ns 250 ns Inductive load, TJ = 125°°C IC = IC90, VGE = 15 V, L = 100 µH 4.2 VCE = 0.8 V CES, RG = Roff = 33 Ω Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES , higher TJ or increased RG 1000 ns 25N120 25N120A 1200 800 1200 ns ns 25N120A 15 RthCK 1 = Gate 2 = Collector 3 = Emitter Tab = Collector mJ 720 RthJC TO-247 AD Outline mJ 0.62 K/W 0.25 K/W IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025