IXYS IXGH30N60BD1

HiPerFASTTM IGBT
with Diode
IXGH 30N60BD1 VCES
IXGT 30N60BD1 I
C25
VCE(sat)
tfi(typ)
Symbol
Test Conditions
Maximum Ratings
VCES
T J = 25°C to 150°C
600
V
VCGR
T J = 25°C to 150°C; RGE = 1 MW
600
V
VGES
Continuous
±20
V
VGEM
Transient
±30
V
IC25
TC = 25°C
60
A
IC90
TC = 90°C
ICM
TC = 25°C, 1 ms
SSOA
(RBSOA)
VGE = 15 V, TVJ = 125°C, RG = 10 W
Clamped inductive load, L = 100 mH
PC
TC = 25°C
TO-268
(IXGT)
G
E
C (TAB)
TO-247 AD
(IXGH)
30
A
120
A
ICM = 60
@ 0.8 VCES
A
200
W
-55 ... +150
°C
G = Gate,
E = Emitter,
TJM
150
°C
-55 ... +150
°C
Features
Tstg
300
°C
1.13/10
Nm/lb.in.
6
4
g
g
TJ
Maximum Lead and Tab temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Md
Mounting torque, TO-247 AD
Weight
TO-247 AD
TO-268
= 600 V
=
60 A
=
1.8 V
= 100 ns
G
C
E
C (TAB)
C = Collector,
TAB = Collector
• International standard package
• Moderate frequency IGBT and
antiparallel FRED in one package
• High current handling capability
• Newest generation HDMOSTM
process
• MOS Gate turn-on
- drive simplicity
Applications
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
BVCES
IC
= 250mA, VGE = 0 V
600
VGE(th)
IC
= 250 mA, VCE = VGE
2.5
ICES
VCE = 0.8 • VCES
VGE = 0 V
IGES
VCE = 0 V, VGE = ±20 V
VCE(sat)
IC
TJ = 25°C
TJ = 150°C
= IC90, VGE = 15 V
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
V
5.0
V
200
3
mA
mA
±100
nA
1.8
V
•
•
•
•
•
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Advantages
• Space savings (two devices in one
package)
• High power density
• Optimized Vce(sat) and switching
speeds for medium frequency
application
98510C (7/00)
1-5
IXGH 30N60BD1
IXGT 30N60BD1
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
IC = IC90; VCE = 10 V,
Pulse test, t £ 300 ms, duty cycle £ 2 %
C ies
Coes
VCE = 25 V, VGE = 0 V, f = 1 MHz
C res
Qg
Qge
IC
= IC90, VGE = 15 V, VCE = 0.5 VCES
Qgc
25
S
2700
pF
240
pF
50
pF
110
nC
22
nC
40
nC
td(on)
Inductive load, TJ = 25°C
25
ns
t ri
IC = IC90, VGE = 15 V, L = 100 mH,
VCE = 0.8 VCES, RG = Roff = 4.7 W
30
ns
td(off)
tfi
Eoff
td(on)
t ri
Eon
td(off)
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG
Inductive load, TJ = 150°C
IC = IC90, VGE = 15 V, L = 100 mH
VCE = 0.8 VCES, RG = Roff = 4.7 W
Eoff
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG
RthJC
RthCK
(TO-247 AD)
tfi
Reverse Diode (FRED)
220
ns
100
190
ns
1.0
2.0
Dim. Millimeter
Min. Max.
Test Conditions
VF
IF = IC90, VGE = 0 V, Pulse test
t £ 300 ms, duty cycle d £ 2 %
IRM
t rr
IF = IC90, VGE = 0 V, -diF/dt = 100 A/ms
VR = 100 V
TJ =100°C
IF = 1 A; -di/dt = 100 A/ms; VR = 30 V
A
B
19.81 20.32
20.80 21.46
0.780 0.800
0.819 0.845
mJ
C
D
15.75 16.26
3.55 3.65
0.610 0.640
0.140 0.144
25
ns
E
F
4.32 5.49
5.4
6.2
0.170 0.216
0.212 0.244
35
ns
G
H
1.65 2.13
4.5
0.065 0.084
0.177
J
K
1.0
1.4
10.8 11.0
0.040 0.055
0.426 0.433
1.0
mJ
200
ns
230
ns
2.5
mJ
0.25
0.62 K/W
K/W
L
M
4.7
0.4
5.3
0.8
0.185 0.209
0.016 0.031
N
1.5 2.49
0.087 0.102
TO-268AA (D3 PAK)
TJ = 150°C
1.6
2.5
6
100
25
V
V
A
ns
ns
0.9 K/W
Dim.
Min. Recommended Footprint
© 2000 IXYS All rights reserved
Inches
Min. Max.
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
RthJC
130
TO-247 AD (IXGH) Outline
A
A1
A2
b
b2
C
D
E
E1
e
H
L
L1
L2
L3
L4
Millimeter
Min. Max.
4.9
5.1
2.7
2.9
.02
.25
1.15
1.45
1.9
2.1
.4
.65
13.80 14.00
15.85 16.05
13.3
13.6
5.45 BSC
18.70 19.10
2.40
2.70
1.20
1.40
1.00
1.15
0.25 BSC
3.80
4.10
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
Inches
Min. Max.
.193 .201
.106 .114
.001 .010
.045 .057
.75
.83
.016 .026
.543 .551
.624 .632
.524 .535
.215 BSC
.736 .752
.094 .106
.047 .055
.039 .045
.010 BSC
.150 .161
2-5
IXGH 30N60BD1
IXGT 30N60BD1
Fig. 1. Saturation Voltage Characteristics
Fig. 2. Extended Output Characteristics
Fig. 3. Saturation Voltage Characteristics
Fig. 4. Temperature Dependence of VCE(sat)
Fig. 5. Admittance Curves
Fig. 6.Temperature Dependence of
BVDSS & VGE(th)
© 2000 IXYS All rights reserved
3-5
IXGH 30N60BD1
IXGT 30N60BD1
Fig. 7. Dependence of EOFF and EOFF on IC.
Fig. 9. Gate Charge
Fig. 8. Dependence of EOFF on RG.
Fig. 10. Turn-off Safe Operating Area
Fig. 11. IGBT Transient Thermal
Resistance
© 2000 IXYS All rights reserved
4-5
IXGH 30N60BD1
IXGT 30N60BD1
TVJ= 100°C
VR = 300V
TVJ= 100°C
VR = 300V
IF= 60A
IF= 30A
IF= 15A
IF= 60A
IF= 30A
IF= 15A
TVJ=150°C
TVJ=100°C
TVJ=25°C
Fig. 12 Forward current IF versus VF
Fig. 13 Reverse recovery charge Qr
versus -diF/dt
Fig. 14 Peak reverse current IRM
versus -diF/dt
TVJ= 100°C
VR = 300V
TVJ= 100°C
IF = 30A
V FR
tfr
IF= 60A
IF= 30A
IF= 15A
I RM
Qr
Fig. 15 Dynamic parameters Qr, IRM
versus TVJ
Fig. 16 Recovery time trr versus -diF/dt
Fig. 17 Peak forward voltage VFR and tfr
versus diF/dt
Constants for ZthJC calculation:
i
1
2
3
Rthi (K/W)
ti (s)
0.502
0.193
0.205
0.0052
0.0003
0.0162
Fig. 18 Transient thermal resistance junction to case
© 2000 IXYS All rights reserved
5-5