IGBT Optimized for IXGA 14N120B IXGP 14N120B VCES = 1200 V = 28 A IC25 VCE(sat) = 3.3 V switching up to 35 KHz Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 28 A IC110 TC = 110°C 14 A ICM TC = 25°C, 1 ms 56 A SSOA VGE = 15 V, TVJ = 125°C, RG = 100 Ω ICM = 28 A (RBSOA) Clamped inductive load PC TC = 25°C TO-220AB (IXGP) G C E TO-263 AA (IXGA) @ 0.8 VCES G 150 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 °C TJ Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Mounting torque with screw M3 Mounting torque with screw M3.5 Weight TO-220 TO-263 0.45/4 Nm/lb.in. 0.55/5 Nm/lb.in. 4 2 g g E C (TAB) Features • International standard packages JEDEC TO-220AB and TO-263AA • Low VCE(sat) - for minimum on-state conduction losses • MOS Gate turn-on - drive simplicity Applications Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VGE(th) IC = 250 µA, VCE = VGE ICES VCE = VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC = IC90, VGE = 15V © 2005 IXYS All rights reserved Characteristic Values Min. Typ. Max. 3.0 5.0 V TJ = 25°C 25 µA TJ = 125°C 250 µA ±100 nA 3.3 V 2.7 • AC motor speed control • DC servo and robot drives • DC choppers • Uninterruptible power supplies (UPS) • Switch-mode and resonant-mode power supplies discharge • Capacitor Advantages • Easy to mount with one screw • Reduces assembly time and cost • High power density DS99382(04/05) IXGA 14N120B IXGP 14N120B TO-220 AB Dimensions Symbol Test Conditions (TJ = 25°C, unless otherwise specified) gfs Characteristic Values Min. Typ. Max. IC = IC110 VCE = 10 V 5.0 9.0 S 35 A Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % IC(on) VGE = 10 V, VCE = 10V 535 pF 36 pF Cres 14 pF Qg 30 nC Cies Coes Qge VCE = 25 V, VGE = 0 V, f = 1 MHz IC = IC110, VGE = 15 V, VCE = 0.5 VCES Qgc 6.0 nC 12 nC td(on) Inductive load, TJ = 25°°C 15 ns tri IC =IC110 , VGE = 15 V 30 ns td(off) VCE = 960 V, RG = Roff = 120 Ω Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG tfi Eoff td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 125°°C IC = IC110 , VGE = 15 V VCE = 960 V, RG = Roff = 120 Ω Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG 500 750 ns 330 500 ns 2.6 4.0 mJ 15 ns 30 ns 0.8 mJ 610 ns 600 ns 4.85 mJ 0.83 RthJC RthCK TO-220 0.5 Pins: 1 - Gate 3 - Emitter 2 - Collector 4 - Collector Bottom Side TO-263 AA Outline K/W K/W 1. 2. 3. 4. Min. Recommended Footprint (Dimensions in inches and mm) Dim. Millimeter Min. Max. Inches Min. Max. A A1 4.06 2.03 4.83 2.79 .160 .080 .190 .110 b b2 0.51 1.14 0.99 1.40 .020 .045 .039 .055 c c2 0.46 1.14 0.74 1.40 .018 .045 .029 .055 D D1 8.64 7.11 9.65 8.13 .340 .280 .380 .320 E E1 e 9.65 6.86 2.54 10.29 8.13 BSC .380 .270 .100 .405 .320 BSC L L1 L2 L3 L4 14.61 2.29 1.02 1.27 0 15.88 2.79 1.40 1.78 0.38 .575 .090 .040 .050 0 .625 .110 .055 .070 .015 R 0.46 0.74 .018 .029 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 Gate Collector Emitter Collector Bottom Side 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 IXGA 14N120B IXGP 14N120B Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 80 28 VGE = 15V VGE = 15V 13V 11V 24 70 13V 60 16 I C - Amperes I C - Amperes 20 9V 12 8 50 11V 40 30 9V 20 7V 4 7V 10 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 2 4 6 8 Fig. 3. Output Characteristics @ 125ºC 14 16 18 20 1.7 VGE = 15V 13V 11V V GE = 15V 1.6 1.5 VC E (sat) - Normalized 24 20 I C - Amperes 12 Fig. 4. Dependence of V CE (sat) on Tem perature 28 16 9V 12 8 7V I C = 28A 1.4 1.3 1.2 1.1 1.0 I C = 14A 0.9 0.8 4 I C = 7A 0.7 0 0.6 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 -50 -25 0 V C E - Volts 25 50 75 100 125 150 8 8.5 TJ - Degrees Centigrade Fig. 5. Collector-to-Em itter Voltage vs. Gate-to-Em itter voltage Fig. 6. Input Adm ittance 7 20 TJ = 25ºC 6 18 16 I C = 28A 14A 7A I C - Amperes VC E - Volts 10 V C E - Volts V C E - Volts 5 4 14 12 10 8 6 TJ = 125ºC 25ºC -40ºC 4 3 2 0 2 6 7 8 9 © 2005 IXYS All rights reserved 10 11 V G E - Volts 12 13 14 15 4 4.5 5 5.5 6 6.5 V G E - Volts 7 7.5 IXGA 14N120B IXGP 14N120B Fig. 8. Dependence of Turn-Off Fig. 7. Transconductance Energy on R G 16 11 10 g f s - Siemens 8 E o f f - milliJoules 9 I C = 28A 14 TJ = -40ºC 25ºC 125ºC 7 6 5 4 3 12 10 TJ = 125ºC VGE = 15V 8 I C = 14A VCE = 960V 6 4 2 2 1 I C = 7A 0 0 0 2 4 6 8 10 12 14 16 18 20 100 150 200 Fig. 9. Dependence of Turn-Off 11 350 400 450 500 11 10 R G = 120Ω 9 VGE = 15V 8 VCE = 960V TJ = 125ºC 9 E o f f - milliJoules 10 E o f f - milliJoules 300 Fig. 10. Dependence of Turn-Off Energy on Tem perature Energy on I C 7 6 5 TJ = 25ºC 4 3 7 6 VGE = 15V 4 VCE = 960V 1 0 0 12 14 16 18 20 22 24 26 28 I C = 7A 25 35 I C - Amperes Sw itching Tim e on R G Switching Time - nanoseconds tfi - - - - TJ = 125ºC VGE = 15V 1200 VCE = 960V 65 75 85 95 105 115 125 I C = 7A 14A 28A 14A 7A 1000 800 Sw itching Tim e on I C 1000 td(off) 1400 55 Fig. 12. Dependence of Turn-Off 2000 1600 45 TJ - Degrees Centigrade Fig. 11. Dependence of Turn-Off 1800 I C = 14A 3 1 10 R G = 120Ω 5 2 8 I C = 28A 8 2 6 Switching Time - nanoseconds 250 R G - Ohms I C - Amperes 600 400 200 td(off) 900 , tfi - - - - - R G = 120Ω, VGE = 15V 800 VCE = 960V 700 TJ = 125ºC 600 500 TJ = 25ºC 400 300 200 100 100 150 200 250 300 R G - Ohms 350 400 450 500 IXYS reserves the right to change limits, test conditions, and dimensions. 6 8 10 12 14 16 I C - Amperes 18 20 22 24 IXGA 14N120B IXGP 14N120B Fig. 14. Reverse-Bias Safe Operating Area Fig. 13. Dependence of Turn-Off Sw itching Tim e on Tem perature 30 1100 td(off) 27 tfi - - - - - 900 800 VGE = 15V 700 24 I C = 28A 14A 7A R G = 120Ω 21 I C - Amperes Switching Time - nanoseconds 1000 VCE = 960V 600 500 400 300 I C = 7A 14A 28A 200 100 25 35 45 55 65 75 85 95 TJ - Degrees Centigrade 18 15 12 9 TJ = 125º C 6 R G = 120Ω dV/dT < 10V/ns 3 0 100 105 115 125 200 V Fig. 15. Gate Charge 400 500 600 C E - Volts Fig. 16. Capacitance 1000 16 f = 1 MHz Capacitance - picoFarads VCE = 600V 14 I C = 14A 12 VG E - Volts 300 I G = 10mA 10 8 6 4 C ies 100 C oes C res 2 10 0 0 3 6 9 12 15 18 21 24 27 0 30 Q G - nanoCoulombs 5 10 15 20 25 30 35 40 V CE - Volts Fig. 17. Maxim um Transient Therm al Resistance R(th )JC - ºC/W 1 0.1 0.1 © 2005 IXYS All rights reserved 1 10 Pulse Width - milliseconds 100 1000