SEMICONDUCTOR TECHNICAL DATA KDV269E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE CATV TUNING. FEATURES Excellent C-V Characteristics, and Small Tracking Error. Useful for Small Size Tuner. 1 A Low Series Resistance : rS=0.75 (Max.) E C B CATHODE MARK High Capacitance Ratio : C2V/C25V=11.0(Min.) 2 D MAXIMUM RATING (Ta=25 CHARACTERISTIC ) SYMBOL RATING UNIT Reverse Voltage VR 34 V Junction Temperature Tj 125 Tstg -55 125 Storage Temperature Range F DIM A B C D E F 1. ANODE 2. CATHODE MILLIMETERS _ 0.10 1.60 + _ 0.10 1.20 + _ 0.10 0.80 + _ 0.05 0.30 + _ 0.10 0.60 + _ 0.05 0.13 + ESC ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL IR Reverse Current TEST CONDITION MIN. TYP. MAX. UNIT - - 10 nA VR=28V Capacitance C2V VR=2V, f=1MHz 29 31.5 34 pF Capacitance C25V VR=25V, f=1MHz 2.5 2.75 2.9 pF 11.0 11.5 - - - - 0.75 Capacitance Ratio C2V/C25V Series Resistance rS VR=5V, f=470MHz Note : Available in matched group for capacitance to 2.0%. C(Max.)-C(Min.) C(Min.) 0.02 (VR=2~25V) Marking Type Name UR 2003. 12. 2 Revision No : 2 1/2 KDV269E 10 10 -10 10 -11 10 -12 10 -13 C T - VR 60 TOTAL CAPACITANCE CT (pF) REVERSE CURRENT I R (A) I R - VR -9 0 10 20 30 40 20 0 40 1 10 REVERSE VOLTAGE VR (V) REVERSE VOLTAGE VR (V) r s - VR ∆(LOG CT ) / ∆(LOG VR ) - VR 0.8 50 0 f=470MHz ∆(LOG CT) / ∆(LOG VR) SERIES RESISTANCE rs (Ω) f=1MHz 0.6 0.4 0.2 -2 -3 0 1 10 REVERSE VOLTAGE VR (V) 2003. 12. 2 -1 Revision No : 2 50 1 10 50 REVERSE VOLTAGE VR (V) 2/2