SEMICONDUCTOR KGT15N120NDA TECHNICAL DATA General Description A N O B Q K H I FEATURES R C J F KEC NPT IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for soft switching application such as IH(induction heating), microwave oven, etc. ・High speed switching G ・High system efficiency ・Soft current turn-off waveforms D E L ・Extremely enhanced avalanche capability M d P 1 P 2 T 3 DIM MILLIMETERS _ 0.20 A 15.60 + _ 0.20 B 4.80 + _ 0.20 C 19.90 + _ 0.20 D 2.00 + _ 0.20 d 1.00 + _ 0.20 E 3.00 + _ 0.20 3.80 + F _ 0.20 G 3.50 + _ 0.20 H 13.90 + _ 0.20 I 12.76 + _ 0.20 J 23.40 + K 1.5+0.15-0.05 _ 0.30 L 16.50 + _ 0.20 M 1.40 + _ 0.20 13.60 + N _ 0.20 9.60 + O _ 0.30 P 5.45 + _ 0.10 Q 3.20 + _ 0.20 R 18.70 + 0.60+0.15-0.05 T 1. GATE 2. COLLECTOR 3. EMITTER TO-3P(N)-E MAXIMUM RATING (Ta=25℃) CHARACTERISTIC SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate-Emitter Voltage VGES ±20 V 30 A 15 A ICM* 45 A IF 15 A IFM 45 A 200 W 80 W Tj 150 ℃ Tstg -55 to + 150 ℃ @TC=25 Collector Current IC @TC=100 Pulsed Collector Current Diode Continuous Forward Current @TC=100 Diode Maximum Forward Current Maximum Power Dissipation @TC=25 PD @TC=100 Maximum Junction Temperature Storage Temperature Range C G E *Repetitive rating : Pulse width limited by max. junction temperature E C G THERMAL CHARACTERISTIC CHARACTERISTIC SYMBOL MAX. UNIT Thermal Resistance, Junction to Case (IGBT) RθJC 0.6 ℃/W Thermal Resistance, Junction to Case (DIODE) RθJC 2.8 ℃/W Thermal Resistance, Junction to Ambient RθJA 40 ℃/W 2009. 11. 11 Revision No : 0 1/8 KGT15N120NDA ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL Collector-Emitter Breakdown Voltage BVCES TEST CONDITION MIN. TYP. MAX. UNIT 1200 - - V Static VGE=0V , IC=1.0mA Collector Cut-off Current ICES VGE=0V, VCE=1200V - - 1.0 mA Gate Leakage Current IGES VCE=0V, VGE=±20V - - ±100 nA VGE(th) VGE=VCE, IC=15mA 4.0 5.5 7.0 V VGE=15V, IC=15A - 1.90 2.30 V VGE=15V, IC=15A, TC = 125℃ - 2.25 - V VGE=15V, IC=30A - 2.35 - V - 115 170 nC - 13 - nC Gate Threshold Voltage Collector-Emitter Saturation Voltage VCE(sat) Dynamic Total Gate Charge Qg Gate-Emitter Charge Qge Gate-Collector Charge Qgc - 40 - nC Turn-On Delay Time td(on) - 50 - ns tr - 30 - ns - 260 - ns - 100 180 ns - 2.7 4.0 mJ Rise Time Turn-Off Delay Time Fall Time VCC=600V, VGE=15V, IC= 15A td(off) tf VCC=600V, IC=15A, VGE=15V,RG=10Ω Inductive Load, TC = 25℃ Turn-On Switching Loss Eon Turn-Off Switching Loss Eoff - 0.55 0.90 mJ Total Switching Loss Ets - 3.25 4.90 mJ Turn-On Delay Time td(on) - 50 - ns tr - 30 - ns - 270 - ns - 150 - ns - 2.9 4.2 mJ Rise Time Turn-Off Delay Time Fall Time td(off) tf VCC=600V, IC=15A, VGE=15V, RG=10Ω Inductive Load, TC = 125℃ Turn-On Switching Loss Eon Turn-Off Switching Loss Eoff - 0.8 1.2 mJ Total Switching Loss Ets - 3.7 5.4 mJ Input Capacitance Cies - 1900 - pF Ouput Capacitance Coes - 80 - pF Reverse Transfer Capacitance Cres - 55 - pF 2009. 11. 11 Revision No : 0 VCE=30V, VGE=0V, f=1MHz 2/8 KGT15N120NDA ELECTRICAL CHARACTERISTIC OF DIODE CHARACTERISTIC SYMBOL VF Diode Forward Voltage MIN. TYP. MAX. TC=25 - 1.8 2.5 TC=125 - 1.9 - TC=25 - 230 300 TC=125 - 270 - IF = 15A TC=25 - 24 31 di/dt = 200A/μs TC=125 - 27 - TC=25 - 2400 4000 TC=125 - 3640 - IF = 15A trr Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge 2009. 11. 11 TEST CONDITION Irr Qrr Revision No : 0 UNIT V ns A nC 3/8 KGT15N120NDA Typical Performance Characteristics Fig 2. Saturation Voltage Characteristics Fig 1. Saturation Voltage Characteristics 180 80 16V 140 ← Common Emitter 15V 12V 120 100 80 10V 60 40 Common Emitter TC=25 C 20 0 0 2 4 6 8 70 VGE = 15V TC = 25 C 60 T = 125 C C 50 40 30 20 10 0 0 10 1 4 5 Fig 3. Saturation Voltage vs. Case Temperature Fig 4. Saturation Voltage vs. VGE 3.5 Common Emitter VGE = 15V 3.0 IC = 30A 2.5 IC = 15A 2.0 1.5 100 75 50 6 16 Common Emitter TC = 25 C 12 8 4 30A 15A IC = 7.5A 0 0 125 4 8 12 16 20 Gate - Emitter Voltage VGE (V) Case Temperature TC ( C ) Fig 5. Saturation Voltage vs. VGE Fig 6. Capacitance Characteristics 16 3500 Common Emitter TC = 125 C Common Emitter VGE = 0V, f = 1MHZ T = 25 C Ciss 3000 C 12 Capacitance (pF) Collector - Emitter Voltage VCE (V) 3 Collector - Emitter Voltage VCE (V) 25 8 30A 4 15A 2500 2000 Coss 1500 Crss 1000 500 IC = 7.5A 0 0 4 8 12 16 Gate - Emitter Voltage VGE (V) 2009. 11. 11 2 Collector - Emitter Voltage VCE (V) Collector - Emitter Voltage VCE (V) Collector - Emitter Voltage VCE (V) Collector Current IC (A) Collector Current IC (A) 20V 160 Revision No : 0 20 0 1 10 40 Collector - Emitter Voltage VCE (V) 4/8 KGT15N120NDA Typical Performance Characteristics (Continued) Fig 7. Turn-On Characteristics vs. Gate Resistance Fig 8. Turn-Off Characteristics vs. Gate Resistance 1000 100 Switching Time (ns) tr Common Emitter VCC = 600V, VGE = 15V IC = 15A TC = 25 C TC = 125 C Switching Time (ns) td(off) td(on) 10 100 tf Common Emitter VCC = 600V, VGE = 15V IC = 15A TC = 25 C TC = 125 C 10 0 10 20 30 40 50 60 70 0 10 20 Gate Resistance RG (Ω) 30 40 50 60 70 Gate Resistance RG (Ω) Fig 9. Switching Loss vs. Gate Resistance Fig 10. Turn-On Characteristics vs. Collector Current 10 100 E(off) 1 Common Emitter VCC = 600V, VGE = 15V IC = 15A TC = 25 C TC = 125 C 0.1 0 10 20 30 40 50 60 Switching Time (ns) Switching Loss (mJ) E(on) td(on) Common Emitter VGE = 15V, RG = 10Ω TC = 25 C TC = 125 C tr 10 70 0 10 Fig 11. Turn-Off Characteristics vs. Collector Current Fig 12. Switching Loss vs. Collector Current 10.0 td(off) tf 100 Common Emitter VGE = 15V, RG = 10Ω TC = 25 C TC = 125 C 10 5 10 15 20 Collector Current IC (Α) Revision No : 0 25 30 Switching Loss (mJ) 1000 Switching Time (ns) 30 Collector Current IC (Α) Gate Resistance RG (Ω) 2009. 11. 11 20 E(on) 1.0 Common Emitter VGE = 15V, RG = 10Ω TC = 25 C TC = 125 C E(off) 0.1 0 10 15 20 25 30 Collector Current IC (Α) 5/8 KGT15N120NDA 2009. 11. 11 6/8