Transistors IC SMD Type P-Channel 12-V (D-S) MOSFET KI2337DS SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 TrenchFET Power MOSFET 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector Absolute Maximum Ratings Ta = 25 Symbol 5 sec Unit Drain-Source Voltage Parameter VDS -80 V Gate-Source Voltage VGS 20 V ID -2.2 -1.75 A Continuous Drain Current(TJ=150 ) *1,2 TA=25 -----------------------------------------------TA=70 ID -1.2 -0.96 A Pulsed Drain Current IDM -7 TC=25 Continuous Drain Current(TJ=150 ) ---------------------------------------------- --TC=70 TC=25 Continuous Source Drain Diode Current IS -2.1 A -0.63 Continuous Source Drain Diode Current *1,2 TA=25 Avalanche Current L = 0 1 mH IAS 11 Single-Pulse Avalanche Energy L = 0 1 mH EAS 6.0 mJ Power Dissipation --------------------------------------------- -- Tc=25 -Tc=70 PD 2.5 1.6 W Power Dissipation *1,2 --------------------------------------------- - TA=25 ---TA=70 PD 0.76 0.48 W Jumction Temperature Tj 150 Storage Temperature Tstg -55 to +150 Soldering Recommendations (Peak Temperature)*3 260 *1Surface mounted on 1" x 1" FR4 Board. *2 t = 10 sec *3 Maximum under steady state conditions is 166 /W. www.kexin.com.cn 1 Transistors IC SMD Type KI2337DS Electrical Characteristics Ta = 25 Parameter Symbol Drain-Source Breakdown Voltage VDS VDS Temperature Coefficient VDS/TJ VGS(th) Temperature Coefficient VGS(th)/TJ Gate Threshold Voltage VGS(th) Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current ID(on) Drain-Source On-State Resistance * rDS(on) Forward Transconductance * gfs Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Turn-On Delay Time Rise Time Turn-Off Delay Time -2 20 V VDS =-80V, VGS = 0 V -1 VDS = -80 V, VGS = 0 V, TJ = 55 -10 VDS -7 -5V, VGS = -10V VGS =-10V, ID = -1.2A 0.216 0.270 VGS = -6V, ID = -1.1 A 0.242 0.303 VDS =-15 V, ID =-1.2A 4.3 500 VDS = -40 V, VGS = 0, f = 1 MHz pF 40 25 VDS = -40 V, VGS = -10 V, ID = -1.2 A VDS = -40V ,VGS = -6 V , ID= -1.2A 11 17.0 7 11.0 nC 2.1 3.2 f = 1 MHz 4.8 23 td(on) 15 23 tr 18 27 20 30 ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb www.kexin.com.cn S 15 Pulse Diode Forward Current* A A tf tf E7 nA 30 IS Marking 100 23 Continuous Source-Drain Diode Current 2%. V 20 Fall Time s duty cycle -4 15 td(off) 300 mV/ 5.45 VDS = VGS, ID = -250 A Unit V -35.8 A VDS = 0 V, VGS = Max 15 td(off) Fall Time 2 VGS = 0 V, ID =-250 A ID = -250 Typ -80 10 tr Turn-Off Delay Time Marking Min td(on) Rise Time * Pulse test: PW Testconditons VDD = -40V , RL =42 , ID = -0.96A , VGEN =-10V , RG = 1 VDD = -40V , RL =42 , ID = -0.96A , VGEN =-6V , RG = 1 12 ns 18 -2.1 TC = 25 ns A -7 IS = 0.63 A IF = 0.63 A, di/dt = 100 A/ s, TJ = 25 -0.8 -1.2 V 30 45 ns 45 70 nC 25 5 ns