IC IC SMD Type N- and P-Channel 2.5-V (G-S) MOSFET KI4562DY PIN Configuration Absolute Maximum Ratings TA = 25 Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage VDS 20 -20 V Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 )* TA = 25 ID TA = 70 Pulsed Drain Current IDM Continuous Source Current (Diode Conduction)* Maximum Power Dissipation* TA = 25 IS PD TA = 70 Operating Junction and Storage Temperature Range Maximum Junction-to-Ambient * *Surface Mounted on FR4 Board, t 12 12 V 7.1 6.2 A 5.7 4.9 A 40 40 A -1.7 A 1.7 2 W 1.3 W TJ, Tstg -55 to 150 RthJA 62.5 /W 10 sec. www.kexin.com.cn 1 IC IC SMD Type KI4562DY Electrical Characteristics TJ = 25 Parameter VGS( th) Gate Threshold Voltage IGSS Gate Body Leakage Zero Gate Voltage Drain Current On State Drain Currenta rDS(on) Forward Transconductance* gfs Diode Forward Voltage* VSD Total Gate Charge Qg Gate Source Charge Qgs Gate Drain Charge Qgd td(on) Turn On Time tr Rise Time Turn Off Delay Time 2 IDSS ID(on) Drain Source On State Resistance* td( off) Fall Time tf Source-Drain Reverse Recovery Time trr * Pulse test; pulse width www.kexin.com.cn Testconditons Symbol Min VDS = VGS, ID = 250 A N-Ch 0.6 VDS = VGS, ID = -250 P-Ch -0.6 A Typ Max V VDS = 0 V VGS = 12 V N-Ch 100 VDS = 0 V VGS = 12 V P-Ch 100 VDS = 20V, VGS = 0 V N-Ch 1 -1 VDS = -20V, VGS = 0 V P-Ch VDS = 20 V, VGS = 0 V, TJ = 55 N-Ch 5 VDS = -20V, VGS = 0 V, TJ = 55 P-Ch -5 VDS 5 V, VGS = 4.5 V N-Ch 20 VDS -5 V, VGS = -4.5 V P-Ch -20 VGS = 4.5 V, ID = 7.1A N-Ch 0.019 0.025 P-Ch 0.027 0.033 VGS = 2.5 V, ID = 6.0A N-Ch 0.025 0.035 VGS = -2.5 V, ID = -5.0A P-Ch 0.040 0.050 VDS = 10 V, ID = 7.1A N-Ch 27 VDS = -10 V, ID = -6.2A P-Ch 20 IS = 1.7A, VGS = 0 V N-Ch 1.2 IS = -1.7A, VGS = 0 V P-Ch -1.2 N-Channel N-Ch 25 50 VDS = 10 V, VGS = 4.5V, ID = 7.1A P-Ch 22 35 N-Ch 6.5 P-Ch 7 VDS = -10 V, VGS = -4.52 V, ID = -6.2A N-Ch 4 P-Ch 3.5 N Channel N-Ch 40 60 VDD = 10 V, RL = 10 P-Ch 27 50 ID= 1A, VGEN = 4.5V, Rg = 6 N-Ch 40 60 P-Ch 32 50 P-Channel N-Ch 90 150 VDD = -10 V, RL = 10 P-Ch 95 150 ID= -1 A, VGEN = -4.5 V, Rg = 6 N-Ch 40 60 P-Ch 45 70 300 s, duty cycle 2%. s s A S P-Channel IF = 1.7 A, di/dt = 100 A/ nA A VGS = -4.5 V, ID = -6.2A IF = -1.7 A, di/dt = 100 A/ Unit V nC N-Ch 40 80 P-Ch 40 80 ns