KODENSHI KLB

Light Emitting Diode(InGaN)
KLB-0315 B
KLB-0315 G is a high bright InGaN blue LED,
and has the optimized optical characteristics.
DIMENSIONS
Features
• Transparent epoxy Encapsulent
• High Optical Output
Applications
• Amusement
• Indicator
• Display
[ Ta=25°C ]
Maximum Ratings
Parameter
Forward current
Pulse forward current
*1
Power dissipation
Operating temperature
Storage temperature
Soldering Temperature
*2
Symbol
Ratings
Unit
IF
20
mA
IFP
30
mA
PD
100
mW
Topr.
-30 ~ +85
°C
Tstg.
-40 ~ +100
°C
Tsol.
260
°C
*1. IFP Measured under duty≤ 1/10 @ 1KHz
*2. Soldering time ≤ 5 Sec
[ Ta=25°C ]
Electro-Optical Characteristics
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
VF
IF = 20 mA
-
3.2
-
V
Optical Output Power
Iv
IF = 20 mA
400
700
-
mcd
Doninant Wave Length
λd
IF = 20 mA
465
-
475
nm
Spectral half bandwidth
∆λ
IF = 20 mA
-
25
-
nm
Half angle
∆Θ
IF = 20 mA
-
110
-
deg.
1/2
Light Emitting Diode(InGaN)
KLB-0315 B
Forward current vs.
Ambient temperature
Radiant Intensity vs.
Forward current
Forward current IF(mA)
(IF)
30
1.5
25
Relative intensity
w
20
u
15
1
0.5
n
10
0
0
20
40
60
80
(℃)
100
0
5
0
Ambient temperature Ta
10
15
20
25
30
(IF)
35
Forward current IF
Relative intensity vs.
Wavelength
Relative radiant intensity vs.
Ambient temperature
1
Intensity [arb.]
Relative radiant intensity PO
1.2
10
1
0.1
0.6
0.4
0.2
-20
0
20
40
60
80
0
350
100 (℃)
400
450
500
Forward current vs.
Forward voltage
Radiant Pattern
Angle(deg)
30
25
20
15
10
5
0
0
550
Wave Length[nm]
Ambient temperature Ta
Forward current IF[mA]
0.8
0.5 1.0 1.5 2.0 2.5 3.0 3.5
Relative intensity(%)
Forward voltage VF[V]
2/2
600