KTC2874 SEMICONDUCTOR SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE TECHNICAL DATA FOR MUTING AND SWITCHING APPLICATION. FEATURES B C High Emitter-Base Voltage : VEBO=25V(Min.) A High Reverse hFE : Reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) Low on Resistance : RON=1 (Typ.), (IB=5mA) DIM A B C d D E G L P T E G D L d ) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO 25 V Collector Current IC 300 mA Base Current IB 60 mA Collector Power Dissipation PC 625 mW Junction Temperature Tj 150 Tstg -55 150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC P P 1 2 3 T MAXIMUM RATING (Ta=25 MILLIMETERS 4.7 MAX 5.1 MAX 4.1 MAX 0.45 0.55 MAX 0.8 1.8 12.7 MIN 1.27 0.45 1. EMITTER 2. COLLECTOR 3. BASE TO-92 ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=50V, IE=0 - - 0.1 A Emitter Cut-off Current IEBO VEB=25V, IC=0 - - 0.1 A DC Current Gain (Note) hFE * VCE=2V, IC=4mA 200 - 1200 VCE(sat) IC=30mA, IB=3mA - 0.042 0.1 V Base-Emitter Voltage VBE VCE=2V, IC=4mA - 0.61 - V Transition Frequency fT VCE=6V, IC=4mA - 30 - MHz VCB=10V, IE=0, f=1MHz - 4.8 7 pF - 160 - - 500 - - 130 - Turn-on Time Time INPUT Storage Time tstg Fall Time tf *Note) : hFE Classification 2003. 6. 30 OUTPUT tON A:200~700, 4kΩ 10V 50Ω Switching Cob 1kΩ Collector Output Capacitance 3kΩ Collector-Emitter Saturation Voltage nS 1µs DUTY CYCLE < = 2% VBB =-3V VCC =12V B: 350 1200 Revision No : 4 1/3 KTC2874 I C - VCE 40 -10 160 COMMON EMITTER Ta=25 C COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) 50 I C - V CE (REVERSE REGION) 140 120 100 80 30 60 40 20 I B =20µA 10 0 0 0 2 4 6 8 COMMON EMITTER Ta=25 C -8 50 40 30 -6 20 -4 I B=10µA -2 0 0 10 -2 0 COLLECTOR-EMITTER VOLTAGE V CE (V) -4 COLLECTOR-EMITTER SATURATION VOLTAGE V CE(sat) (mV) DC CURRENT GAIN h FE Ta=100 C 1k 500 VCE =6V Ta=25 C Ta=-25 C 300 VCE =2V 100 50 0.3 1 3 10 30 100 500 300 COMMON EMITTER I C /I B =10 100 50 30 10 5 3 1 0.1 COLLECTOR CURRENT I C (mA) 0.3 1 3 TRANSTION FREQUENCY f T (MHz) VCE =2V 00 C 200 Ta= 1 COLLECTOR CURRENT I C (mA) COMMON EMITTER Ta=25 C Ta=-25 C 0 0.4 0.8 1.2 BASE-EMITTER VOLTAGE VBE (V) 2003. 6. 30 30 100 300 fT - IE 300 0 10 COLLECTOR CURRENT I C (mA) I C - V BE 100 -10 VCE(sat) - I C COMMON EMITTER 3k -8 COLLECTOR-EMITTER VOLTAGE VCE (V) h FE - I C 5k -6 Revision No : 4 1.6 500 300 COMMON EMITTER VCE =6V Ta=25 C 100 50 30 10 5 -0.1 -0.3 -1 -3 -10 -30 -100 EMITTER CURRENT I E (mA) 2/3 KTC2874 R ON - I B 30 f=1MHz I E =0 Ta=25 C 10 5 3 1 0.3 0.5 1 3 5 10 30 COLLECTOR-EMITTER ON RESISTANCE R ON (Ω) COLLECTOR OUTPUT CAPACITANCE C ob (pF) C ob - V CB 100 1kΩ 50 30 10kΩ IB 10 5 3 1 0.5 0.3 0.01 0.03 0.1 0.3 1 3 10 BASE CURRENT I B (mA) COLLECTOR-BASE VOLTAGE VCB (V) COLLECTOR POWER DISSIPATION P C (mW) Pc - Ta 700 600 500 400 300 200 100 0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE Ta ( C) 2003. 6. 30 Revision No : 4 3/3