SEMICONDUCTOR KTA1517 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES High Voltage : VCEO=-120V. E B L L DIM A B C D E G H J K L M N P Excellent hFE Linearity D : hFE(0.1mA)/hFE(2mA)=0.95(Typ.). 2 A 3 G High hFE: hFE=200 700. H Low Noise : NF=1dB(Typ.), 10dB(Max.). 1 Complementary to KTC3911S. J ) M K MAXIMUM RATING (Ta=25 P N C P MILLIMETERS _ 0.20 2.93 + 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO -120 V Collector-Emitter Voltage VCEO -120 V Emitter-Base Voltage VEBO -5 V Collector Current IC -100 mA Base Current IB -20 mA Collector Power Dissipation PC 150 mW Junction Temperature Tj 150 Tstg -55 150 Storage Temperature Range 1. EMITTER 2. BASE 3. COLLECTOR SOT-23 Marking h FE Rank Type Name Lot No. AC ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=-120V, IE=0 - - -0.1 A Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -0.1 A DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency hFE (Note) VCE=-6V, IC=-2mA 200 - 700 VCE(sat) IC=-10mA, IB=-1mA - - -0.3 V fT VCE=-6V, IC=-1mA - 100 - MHz VCB=-10V, IE=0, f=1MHz - 4.0 - pF - 1.0 10 dB Collector Output Capacitance Cob Noise Figure NF VCE=-6V, IC=-0.1mA f=1kHz, Rg=10k Note : hFE Classification 2006. 2. 16 GR(G):200 400 Revision No : 0 BL(L):350 700 1/3 KTA1517 I C - V CE -9 -8 -7 -3 -6 -5 -2 -4 -3 -1 -2 I B =-1µA 0 0 -2 0 -4 -6 -8 -20 -15 -10 -5 0 0 -10 -0.2 -0.4 -0.6 -0.8 COLLECTOR-EMITTER VOLTAGE V CE (V) BASE-EMITTER VOLTAGE V BE (V) h FE - I C h PARAMETER - I E -1.0 1k 5k COMMON EMITTER VCE =-6V Ta=25 C 1k Ta=100 C 500 Ta=25 C Ta=-25 C 300 50 30 -0.3 -1 -3 -10 -30 -50 COLLECTOR CURRENT I C (mA) COMMON EMITTER VCE =-6V f=270Hz Ta=25 C hi e( x 100 h re (x1 kΩ ) 0 -5 ) 10 5 3 100 -0.1 h fe 500 300 h PARAMEMTER 3k DC CURRENT GAIN h FE -25 Ta=-25 C -4 COMMON EMITTER VCE =-6V Ta=25 C Ta=25 C -10 Ta=100 C COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) -30 COMMON EMITTER Ta=25 C 1 30 Ω -5 I C - V BE h ie 100 (xµ ) 300 1k 3k 10k EMITTER CURRENT I E (µA) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (V) VCE(sat) - I C -0.5 COMMON EMITTER -0.3 I C /I B =10 Ta=25 C -0.1 -0.05 -0.03 -0.01 -0.1 -0.3 -1 -3 -10 -30 -50 COLLECTOR CURRENT I C (mA) 2006. 2. 16 Revision No : 0 2/3 KTA1517 NF - R g , I C 700 500 h fe h PARAMETER 300 COMMON EMITTER I E =1mA 100 f=270Hz Ta=25 C ho e (x µ Ω 50 30 ) -5 0 ) h re (x1 h ie (xkΩ) 10 5 -1 -3 -5 -10 -30 -50 -100 SIGNAL SOURCE RESISTANCE R g (Ω) h PARAMETER - V CE 100k COMMON EMITTER VCE =-6V f=1kHz 10k 1k NF 6 100 10 12 1k 12 NF=1dB 2 3 100 4 6 10 12 10 -10 -100 -1000 8 -10000 COLLECTOR POWER DISSIPATION P C (mW) COLLECTOR CURRENT I C (µA) COLLECTOR OUTPUT CAPACITANCE C ob (pF) SIGNAL SOURCE RESISTANCE R g (Ω) COMMON EMITTER VCE =-6V f=10Hz 10 =1 =1 dB 2 3 4 6 dB 8 -100 -1k -10k COLLECTOR CURRENT I C (µA) NF - R g , I C 10k 4 3 2 10 -10 COLLECTOR-EMITTER VOLTAGE V CE (V) 100k NF 1 10 2 8 C ob - V CB 20 I E =0 f=1MHz Ta=25 C 10 5 3 1 -1 -3 -10 -30 -100 -200 COLLECTOR-BASE VOLTAGE VCB (V) P C - Ta 200 150 100 50 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE Ta ( C) 2006. 2. 16 Revision No : 0 3/3