Ordering number : ENA0300A Monolithic Digital IC LB11988HR Fan Motor Driver Overview LB11988HR is a motor driver IC optimal for driving the DC fan motors. Functions • Three-phase full-wave current linear drive • Built-in current limiter circuit • Built-in saturation prevention circuits in both the upper and lower sides of the output stage • Forward/backward rotation direction setting circuit built in • FG amplifier • Thermal shutdown circuit Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Maximum supply voltage Symbol Conditions Ratings Unit VCC max 24 V VS max 24 V Maximum output current IO max Allowable power dissipation Pd max Independent IC 1.3 A 0.8 W Operating temperature Topr -40 to +85 °C Storage temperature Tstg -55 to +150 °C Caution 1) Absolute maximum ratings represent the value which cannot be exceeded for any length of time. Caution 2) Even when the device is used within the range of absolute maximum ratings, as a result of continuous usage under high temperature, high current, high voltage, or drastic temperature change, the reliability of the IC may be degraded. Please contact us for the further details. Allowable Operating Ratings at Ta = 25°C Parameter Supply voltage Symbol Conditions VS VHALL Unit 5 to 22 VCC Hall input amplitude Ratings 7 to 22 Between Hall inputs ±30 to ±80 V V mVo-p Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. 20812 SY 20120124-S00009//52506 MH IM B8-7845 No.A0300-1/6 LB11988HR Electrical Characteristics at Ta = 25°C, VCC = 12V, VS = 12V Ratings Parameter Symbol Conditions Unit min VCC current drain ICC typ max RL = 560Ω (Y) 15 24 mA VOsat1 IO = 500mA, Rf = 0.5Ω, Sink + Source (Saturation prevention function included) 2.1 2.6 V VOsat2 IO = 1.0A, Rf = 0.5Ω, Sink + Source (Saturation prevention function included) 2.6 3.5 V 1.0 mA +6 mV Output Output saturation voltage Output leakage current IOleak Hall amplifier Input offset voltage Voff (HALL) Input bias current -6 Vb (HALL) Common-mode input voltage 3 μA 3 VCC-3 V 1.5 VCC-1.5 V 8 VIN, WIN Vcm1(HALL) VCC=VS=12V Vcm2(HALL) VCC=VS=5V 1 FR Threshold voltage VFRTH 4 Input bias current Ib (FR) -5 V μA Current limiter LIM pin current limit level ILIM Rf = 0.5Ω, With the Hall input logic states fixed 1 A 0.28 V (U, V, W = high, high, low) Saturation Saturation prevention circuit VOsat (DET) RL = 560Ω (Y), Rf = 0.5Ω, The voltage between lower side voltage setting each output and the corresponding Rf. FG amplifier Upper side output saturation Vsatu (SH) 11.8 V voltage Lower side output saturation Vsatd (SH) 0.3 V voltage Hysteresis Vhys TSD operating temperature T-TSD Design target value* 23 mV 170 °C Note * : Items shown to be design target values in the conditions column are not measured. Package Dimensions unit : mm (typ) 3233B HEAT SPREADER 15.2 (6.2) 0.65 7.9 10.5 15 (4.9) 28 1 14 0.8 0.25 2.7 2.45max 0.3 (2.25) 2.0 0.1 (0.8) SANYO : HSOP28H(375mil) No.A0300-2/6 LB11988HR Pd max - Ta Allowable power dissipation, Pd max - W 1.0 Independent IC 0.8 0.8 0.6 0.42 0.4 0.2 0 -40 0 -20 20 40 60 80 100 Ambient temperature, Ta - C 19 WIN- 18 WIN+ 17 VIN- 16 NC 15 NC NC 10 NC 11 UIN+ 12 UIN- 13 VIN+ 14 20 NC VCC 21 22 VS 23 RF 24 NC 25 NC 26 NC 28 VOUT 27 UOUT Pin Assignment 9 FC 8 7 NC FR GND 6 5 NC FGOUT 4 3 NC 2 NC WOUT 1 LB11988HR Top view Truth Table and Control Functions Hall input Note : The “H” state for FR is defined as a voltage of 8V or higher, and the Source→Sink FR U V W H H L V→W 1 W→V H U→W 2 W→U H L L U→V 3 V→U H L H L L H W→V 4 V→W U→W U→V where the (+) input is higher than the corresponding (-) input by L 0.01V or higher, and the input low state is defined to be the state H where the (+) input is lower than the corresponding (-) input by L 0.01V or higher. L H L H H V→U 6 Note : For the Hall inputs, the input high state is defined to be the state H H W→U 5 L “L” state for FR is defined as a voltage of 4V or lower. (When VCC = 12V.) L H L H L Note : Since this drive technique is a 180° current application scheme, the phases other than the sink and the source phases will not turn off. L No.A0300-3/6 Forward/reverse switing Reference voltage - + TSD Current limiter + GND Feedback amplifier Differential distribution LIMREF Synthesized output logarithmic compression block Bandgap 1.2V - + - + - + FC Logarithmic conversion and differential distribution VCC FR WIN- WIN+ VIN- VIN+ UIN- UIN+ VCC VCC - + - + UIN- UIN+ - + + FG amplifier - + Schmitt amplifier - + Drive distribution circuit and lower side saturation prevention control Upper side saturation prevention control FGOUT VCC WOUT VOUT UOUT RF VS LB11988HR Block Diagram Hall input synthesis block (linear matrix) No.A0300-4/6 LB11988HR Equivalent Circuit Pin name UIN+ UINVIN+ VINWIN+ WIN- Equivalent circuit Input + Input 200Ω 200Ω 100μA UOUT VOUT VS VCC WOUT RF 150μA Output VS Lower side oversaturation prevention circuit input block 200Ω 30kΩ RF FR VCC 200μA FR 200Ω 1/2 VCC FC VCC 10kΩ FC FGOUT VCC VCC FGOUT No.A0300-5/6 LB11988HR Pin Functions Pin No. Pin name 7 GND FRAME Note that the Rf pin will be at the lowest potential of the output transistors. 4 FGOUT 6 FR 9 FC 12, 13 18, 19 UIN+, UINVIN+, VINWIN+, WIN- 21 VCC 14, 17 Function Ground for circuits other than the output transistors. This is the FG amplifier output pin. Internally, it is a resistive load. (Pull up) Forward/reverse switching pin Corrects the frequency characteristics of the saturation prevention circuit loop and current limiter circuit. U-phase Hall input. Logic high refers to the state where IN+ > IN-. V-phase Hall input. Logic high refers to the state where IN+ > IN-. W-phase Hall input. Logic high refers to the state where IN+ > IN-. Power supply provided to all IC internal circuits other than the output block. This voltage must be stabilized so that ripple and noise do not enter the IC. 22 VS 23 RF Output block power supply Used for output current detection. The current limiter circuit operates using the resistor (Rf) connected between this pin and ground. Note that the lower side saturation prevention circuit operates according to the voltage that appears on this pin. Since the over-saturation level is set by this voltage, the level of the lower side saturation prevention circuit may be degraded in the large current region if the value of Rf is made extremely small. 27 U-phase Hall output. 28 UOUT VOUT 1 WOUT W-phase Hall output. V-phase Hall output. (These pins include internal spark killer diodes.) SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of February, 2012. Specifications and information herein are subject to change without notice. PS No.A0300-6/6