LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only DUAL DIGIT LED DISPLAY (0.40 Inch) LDD405/6SBKS-XXN/P10 DATA SHEET DOC. NO : QW0905- LDD405/6SBKS-XXN/P10 REV. : A DATE : 01- Nov. - 2005 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 1/7 PART NO. LDD405/6SBKS-XXN/P10 Package Dimensions 20.2 (0.795") 10.16 (0.40") DIG.1 6.9 (0.272") DIG.2 16.0 (0.630") ψ1.3(0.051") LDD405/6SBKS-XXN/P10 LIGITEK 15.8± 0.5 Ø0.51 TYP. PIN NO.1 2.45X7= 17.15(0.675") Note : 1.All dimension are in millimeters and (lnch) tolerance is ± 0.25(0.01") unless otherwise noted. 2.Specifications are subject to change without notice. 12.6 (0.496") LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LDD405/6SBKS-XXN/P10 Page 2/7 Internal Circuit Diagram LDD405SBKS-XXN/P10 5 4 DIG.1 DIG.2 A B C D E F G 15 13 1 3 2 14 16 A B C D E F G 10 12 8 6 7 11 9 LDD406SBKS-XXN/P10 4 DIG.1 A B C D E F G 15 13 1 3 2 14 16 5 DIG.2 A B C D E F G 10 12 8 6 7 11 9 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 3/7 PART NO. LDD405/6SBKS-XXN/P10 Electrical Connection PIN NO. LDD405SBKS-XXN/P10 PIN NO. LDD406SBKS-XXN/P10 1 Anode C Dig.1 1 Cathode C Dig.1 2 Anode E Dig.1 2 Cathode E Dig.1 3 Anode D Dig.1 3 Cathode D Dig.1 4 Common Cathode Dig.1 4 Common Anode Dig.1 5 Common Cathode Dig.2 5 Common Anode Dig.2 6 Anode D Dig.2 6 Cathode D Dig.2 7 Anode E Dig.2 7 Cathode E Dig.2 8 Anode C Dig.2 8 Cathode C Dig.2 9 Anode G Dig.2 9 Cathode G Dig.2 10 Anode A Dig.2 10 Cathode A Dig.2 11 Anode F Dig.2 11 Cathode F Dig.2 12 Anode B Dig.2 12 Cathode B Dig.2 13 Anode B Dig.1 13 Cathode B Dig.1 14 Anode F Dig.1 14 Cathode F Dig.1 15 Anode A Dig.1 15 Cathode A Dig.1 16 Anode G Dig.1 16 Cathode G Dig.1 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 4/7 PART NO. LDD405/6SBKS-XXN/P10 Absolute Maximum Ratings at Ta=25 ℃ Ratings Symbol Parameter UNIT SBKS Forward Current Per Chip IF 30 mA Peak Forward Current Per Chip (Duty 1/10,0.1ms Pulse Width) IFP 100 mA Power Dissipation Per Chip PD 120 mW Ir 50 μA ESD 500 V Operating Temperature Topr -25 ~ +85 ℃ Storage Temperature Tstg -25 ~ +85 ℃ Reverse Current Per Any Chip Electrostatic Discharge( * ) Solder Temperature 1/16 Inch Below Seating Plane For 3 Seconds At 260 ℃ Static Electricity or power surge will damage the LED. Use of a conductive wrist band or anti-electrosatic * glove is recommended when handing these LED. All devices, equipment and machinery must be properly grounded. Part Selection And Application Information(Ratings at 25℃) common λD △λ cathode (nm) (nm) Material Emitted or anode Electrical CHIP PART NO Iv(mcd) Typ. Max. 3.5 4.2 IV-M Min. Typ. Common Cathode LDD405SBKS-XXN/P10 InGaN/SiC Blue LDD406SBKS-XXN/P10 Vf(v) 475 26 Common Anode Note : 1.The forward voltage data did not including ±0.1V testing tolerance. 2. The luminous intensity data did not including ±15% testing tolerance. 7.2 12.8 2:1 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 5/7 PART NO. LDD405/6SBKS-XXN/P10 Test Condition For Each Parameter Symbol Unit Test Condition Forward Voltage Per Chip Vf volt If=20mA Luminous Intensity Per Chip Iv mcd If=10mA Dominant Wavelength λD nm If=20mA △λ nm If=20mA Ir μA Vr=5V Parameter Spectral Line Half-Width Reverse Current Any Chip Luminous Intensity Matching Ratio IV-M LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 6/7 PART NO. LDD405/6SBKS-XXN/P10 Typical Electro-Optical Characteristics Curve SBK-S CHIP Fig.2 Relative Intensity vs. Forward Current 30 1.5 Relative Intensity Normalize @20mA Forward Current(mA) Fig.1 Forward current vs. Forward Voltage 25 20 15 10 5 0 1 2 3 4 1.25 1.0 0.75 0.5 0.25 0 5 0 5 Relative Intensity@20mA Forward Current@20mA 40 30 20 10 0 50 75 Ambient Temperature( ℃) 20 25 30 Fig.4 Relative Intensity vs. Wavelength Fig.3 Forward Current vs. Temperature 25 15 Forward Current(mA) Forward Voltage(V) 0 10 100 1.0 0.5 0 380 430 480 530 580 Wavelength (nm) 630 680 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 7/7 PART NO. LDD405/6SBKS-XXN/P10 Reliability Test: Test Item Test Condition Description Reference Standard Operating Life Test 1.Under Room Temperature 2.If=10mA 3.t=1000 hrs (-24hrs, +72hrs) This test is conducted for the purpose of detemining the resisance of a part in electrical and themal stressed. MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1 High Temperature Storage Test 1.Ta=105 ℃±5 ℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under ondition of high temperature for hours. MIL-STD-883:1008 JIS C 7021: B-10 Low Temperature Storage Test 1.Ta=-40 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of low temperature for hours. High Temperature High Humidity Test 1.Ta=65 ℃±5℃ 2.RH=90 %~95 % 3.t=240hrs ±2hrs The purpose of this test is the resistance of the device under tropical for hous. 1.Ta=105 ℃±5 ℃&-40 ℃±5℃ (10min) (10min) 2.total 10 cycles The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011 Solder Resistance Test 1.T.Sol=260 ℃±5℃ 2.Dwell time= 10 ±1sec. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1 Solderability Test 1.T.Sol=230 ℃±5℃ 2.Dwell time=5 ±1sec This test intended to see soldering well performed or not. MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2 Thermal Shock Test JIS C 7021: B-12 MIL-STD-202:103B JIS C 7021: B-11