LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only FOUR DIGIT LED DISPLAY (0.28 Inch) Pb Lead-Free Parts LFD265/6A-XX/RP85 DATA SHEET DOC. NO : QW0905- LFD265/6A-XX/RP85 REV. : DATE : 09 - Sep. - 2005 A LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 1/7 PART NO. LFD265/6A-XX/RP85 Package Dimensions 6.1(0.24") 30.26(1.191") L3 7.0 (0.28") DIG.1 DIG.2 L1 DIG.3 L2 DIG.4 10.0 (0.394") 7.62 (0.3") ψ0.8(0.031") LFD265/6A-XX/RP85 LIGITEK A F G E B C D DP 8.5±0.5 ψ0.45 TYP 2.54X7=17.78 PIN NO.1 Note : 1.All dimension are in millimeters and (lnch) tolerance is ±0.25mm unless otherwise noted. 2.Specifications are subject to change without notice. LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 2/7 PART NO. LFD265/6A-XX/RP85 Internal Circuit Diagram LFD266A-XX/RP85 LFD265A-XX/RP85 13 15 2 6 5 16 7 3 A B C D E F G DP A B C D E F G DP L1 L2 L3 DIG. 1 1 DIG. 2 14 13 15 2 6 5 16 7 3 A B C D E F G DP A B C D E F G DP 12 A DIG. 1 1 DIG. 2 14 12 A B DIG. 3 C D 11 E F G DP B DIG. C D 11 E F G DP A B C D E F G DP A B C D E F G DP DIG. 4 8 3 DIG. 4 8 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 3/7 PART NO. LFD265/6A-XX/RP85 Electrical Connection PIN NO.1 LFD265A-XX/RP85 PIN NO.1 LFD266A-XX/RP85 1 Common Cathode Dig.1 1 Common Anode Dig.1 2 Anode C,L3 2 Cathode C,L3 3 Anode DP 3 Cathode DP 4 NC 4 NC 5 Anode E 5 Cathode E 6 Anode D 6 Cathode D 7 Anode G 7 Cathode G 8 Common Cathode Dig.4 8 Common Anode Dig.4 9 NC 9 NC 10 NC 10 NC 11 Common Cathode Dig.3 11 Common Anode Dig.3 12 Common Cathode L1,L2,L3 12 Common Anode L1,L2,L3 13 Anode A ,L1 13 Cathode A,L1 14 Common Cathode Dig.2 14 Common Anode Dig.2 15 Anode B,L2 15 Cathode B,L2 16 Anode F 16 Cathode F LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 4/7 PART NO. LFD265/6A-XX/RP85 Absolute Maximum Ratings at Ta=25 ℃ Ratings Symbol Parameter UNIT 9UG Forward Current Per Chip IF 30 mA Peak Forward Current Per Chip (Duty 1/10,0.1ms Pulse Width) IFP 60 mA Power Dissipation Per Chip PD 75 mW Ir 10 μA Operating Temperature Topr -25 ~ +85 ℃ Storage Temperature Tstg -25 ~ +85 ℃ Reverse Current Per Any Chip Solder Temperature 1/16 Inch Below Seating Plane For 3 Seconds At 260 ℃ Part Selection And Application Information(Ratings at 25℃) common cathode Material Emitted or anode CHIP PART NO △λ Iv(mcd) Vf(v) (nm) Min. Typ. Max. Min. Typ. 2.6 7.2 IV-M Common Anode LFD265A-XX/RP85 AIGaINP LFD266A-XX/RP85 Electrical λD ( nm) 574 Green 20 1.7 2.1 Common Cathode Note : 1.The forward voltage data did not including ±0.1V testing tolerance. 2. The luminous intensity data did not including ± 15% testing tolerance. 3.05 2:1 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 5/7 PART NO. LFD265/6A-XX/RP85 Test Condition For Each Parameter Symbol Unit Test Condition Forward Voltage Per Chip Vf volt If=20mA Luminous Intensity Per Chip Iv mcd If=10mA λD nm If=20mA △λ nm If=20mA Ir μA Vr=5V Parameter Dominant Wavelength Spectral Line Half-Width Reverse Current Any Chip Luminous Intensity Matching Ratio IV-M LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 6/7 PART NO. LFD265/6A-XX/RP85 Typical Electro-Optical Characteristics Curve 9UG CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current 3.0 Relative Intensity Normalize @20mA Forward Current(mA) 1000 100 10 1.0 0.1 2.5 2.0 1.5 1.0 0.5 0 1.0 2.0 3.0 4.0 1.0 5.0 10 Fig.4 Relative Intensity vs. Temperature 1.2 Relative Intensity @20mA Normalize @25 ℃ Forward Voltage@20mA Normaliz @25 ℃ Fig.3 Forward Voltage vs. Temperature 1.1 1.0 0.9 0.8 -20 0 20 40 60 80 100 Relative Intensity @20mA Fig.5 Relative Intensity vs. Wavelength 1.0 0.5 0 550 600 Wavelength (nm) 3.0 2.5 2.0 1.5 1.0 0.5 0 -40 -20 0 20 40 60 80 Ambient Temperature(℃) Ambient Temperature(℃) 500 1000 Forward Current(mA) Forward Voltage(V) -40 100 650 100 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 7/7 PART NO. LFD265/6A-XX/RP85 Reliability Test: Test Item Test Condition Description Reference Standard Operating Life Test 1.Under Room Temperature 2.If=10mA 3.t=1000 hrs (-24hrs, +72hrs) This test is conducted for the purpose of detemining the resisance of a part in electrical and themal stressed. MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1 High Temperature Storage Test 1.Ta=105 ℃±5 ℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under ondition of high temperature for hours. MIL-STD-883:1008 JIS C 7021: B-10 Low Temperature Storage Test 1.Ta=-40 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of low temperature for hours. High Temperature High Humidity Test 1.Ta=65 ℃±5℃ 2.RH=90 %~95% 3.t=240hrs ±2hrs The purpose of this test is the resistance of the device under tropical for hous. 1.Ta=105 ℃±5℃&-40 ℃±5℃ (10min) (10min) 2.total 10 cycles The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011 Solder Resistance Test 1.T.Sol=260 ℃±5 ℃ 2.Dwell time= 10 ±1sec. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1 Solderability Test 1.T.Sol=230 ℃±5 ℃ 2.Dwell time=5 ±1sec This test intended to see soldering well performed or not. MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2 Thermal Shock Test JIS C 7021: B-12 MIL-STD-202:103B JIS C 7021: B-11