LPT16ED 30 GHz SiGe Bipolar Transistor Final Applications Product Description The LPT16ED is a silicon germanium low phase noise, high frequency NPN transistor for oscillator applications up to 16GHz. Low phase noise oscillators up to 16 GHz VCO’s, DRO’s and YIG oscillators Point-to-point radios Satellite communications Fiber optics, OC-192 and OC-768 Local Multipoint Distribution Systems, LMDS The transistor exhibits low 1/f noise and provides +13 dBm typical output power at VCE of 3V and IC equal to 20 mA. It is easily operated from a single supply voltage with appropriate external passive components. Features Low 1/f noise: -142 dBc/Hz at 100 Hz offset Phase noise: -167 dBc/Hz at 100 kHz offset Output power up to +13 dBm Operation down to 1 volt, 2 mA Gold bump pads for wire bond or flip chip (for direct die attachment) The silicon germanium technology used in this device provides outstanding high-frequency performance combined with high thermal conductivity and superior reliability under harsh operating and storage conditions. A complete mechanical description of the transistor is available under SiGe Semiconductor Document 07MS001. Ordering Information Type Package Remark LPT16ED Bare Die Shipped in Waffle Pack Functional Block Diagram C B E 38-DST-01 Rev 2.3 Sept 5/02 1 of 5 LPT16ED 30 GHz SiGe Bipolar Transistor Final Absolute Maximum Ratings Operation in excess of any one of Absolute Maximum Ratings may result in permanent damage. This is a high performance RF device with ESD rating < 2keV. Handling and assembly of this device should be done at ESD protected workstations. Symbol Parameter Min. Max. Unit VCBO Collector to Base Voltage +13.0 V VCEO Collector to Emitter Voltage +4.0 V VEBO Emitter to Base Voltage +1.5 V IC Collector Current 80 mA IB Base Current 2.0 mA PT Total Power Dissipation 250 mW Tj Junction Temperature +150 °C TSTG Storage Temperature +150 °C -65 DC Electrical Characteristics Conditions: TA = unless otherwise specified 25°C Symbol VBE Parameter Condition Min. Typ. Max. Unit Base-emitter voltage IC = 1µA 670 687 700 mV BVCEO Collector-emitter breakdown voltage Open base 4.0 4.5 5.0 V BVCES Collector-emitter breakdown voltage Base-emitter shorted via 100kΩ 14 15.0 16 V BVEBO Emitter-base breakdown voltage IE = 100µA, open collector 2.0 2.3 2.6 V BVCBO Collector-base breakdown voltage Open emitter 14 15.0 16 V Early voltage IC = 10mA, VCE = 3V 100 200 300 V ICBO Collector-base cutoff current VCB = 5V and IE = 0 100 pA IEBO Emitter-base cutoff current VEB = 1.5V and IC = 0 5 10 15 µA hFE DC current gain VCE = 2V, IC = 20mA 50 60 150 VA 38-DST-01 Rev 2.3 Sept 5/02 2 of 5 LPT16ED 30 GHz SiGe Bipolar Transistor Final AC Electrical Characteristics Symbol IS21I2 MAG/ MSG Parameter Insertion Power Gain (ZS = ZL = 50Ω) Maximum Available Gain or Maximum Stable Gain Note Min. Typ. Max. Unit VCE = 1.5V, IC = 10mA, f = 16GHz 0.7 1.0 1.3 dB VCE = 3.0V, IC = 20mA, f = 16GHz 2.3 2.6 2.9 dB VCE = 1.5V, IC = 10mA, f = 16GHz 3.3 3.6 4.2 dB VCE = 3.0V, IC = 20mA, f = 16GHz 4.9 5.2 5.6 dB Typical Performance Characteristics Please refer to application note (Document 07AN001). Typical Measurements @ 10 GHz, IC=5mA, VCE=1V Residual Phase Noise (dBc/Hz) Frequency (Hz) Typical Applications Information Series or parallel feedback oscillators at 5-16 GHz. (Please refer to application note, Document 07AN001). 38-DST-01 Rev 2.3 Sept 5/02 3 of 5 LPT16ED 30 GHz SiGe Bipolar Transistor Final Die and Pad Description X length Die edge Collector Emitter2 Emitter1 Base Y length 0,0 Dimensions are relative to the 0,0 cut die corner. Feature Specification Comments Die thickness 10 mil +/- 1mil X length 15.3 mil +/- 1mil Y length 14.5 mil +/- 1mil Pad diameter 2.9 mil +/- 0.1mil Pads are circular. Pad pitch 6 mil +/- 0.1mil Pad center to pad centre Pad/bump height 1 mil +/- 0.05mil Pad/bump co-planarity 0.2 mil Pad Center Position (X mil, Y mil) +/- 0.7mil relative to the 0,0 cut die corner Collector 5, 11 Emitter1 5, 5 Base 11, 5 Emitter 2 11, 11 Please refer to Document 01-MS-001 for SiGe’s die inspection criteria. For S-parameter data, please refer to SiGe Document 07SP001. 38-DST-01 Rev 2.3 Sept 5/02 4 of 5 LPT16ED 30 GHz SiGe Bipolar Transistor Final http://www.sige.com Headquarters: Canada Phone: +1 613 820 9244 Fax: +1 613 820 4933 2680 Queensview Drive Ottawa ON K2B 8J9 Canada [email protected] San Diego United Kingdom Phone: +1 858 668 3541 Fax: +1 858 668 3546 South Building, Walden Court Parsonage Lane, Bishop’s Stortford Hertfordshire CM23 5DB Hong Kong Phone: +44 1279 464 200 Fax: +44 1279 464 201 Phone: +1 852 9177 1917 Product Preview The datasheet contains information from the product concept specification. SiGe Semiconductor Inc. reserves the right to change information at any time without notification. Preliminary Information The datasheet contains information from the design target specification. SiGe Semiconductor Inc. reserves the right to change information at any time without notification. Final The datasheet contains information from the final product specification. SiGe Semiconductor Inc. reserves the right to change information at any time without notification. Production testing may not include testing of all parameters. Information furnished is believed to be accurate and reliable and is provided on an “as is” basis. SiGe Semiconductor Inc. assumes no responsibility or liability for the direct or indirect consequences of use of such information nor for any infringement of patents or other rights of third parties, which may result from its use. No license or indemnity is granted by implication or otherwise under any patent or other intellectual property rights of SiGe Semiconductor Inc. or third parties. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SiGe Semiconductor Inc. products are NOT authorized for use in implantation or life support applications or systems without express written approval from SiGe Semiconductor Inc. TM TM TM TM RangerCharger , StreamCharger , PointCharger , and LightCharger are trademarks owned by SiGe Semiconductor Inc. Copyright 2002 SiGe Semiconductor All Rights Reserved 38-DST-01 Rev 2.3 Sept 5/02 5 of 5