LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only SINGLE DIGIT LED DISPLAY (1.0 Inch) LSD1015/6SBKS-XX DATA SHEET DOC. NO : QW0905- LSD1015/6SBKS-XX REV. : A DATE : 15 - Oct. - 2005 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LSD1015/6SBKS-XX Page 1/7 Package Dimensions 22.8(0.898") A1 LSD1015/6SBKS-XX LIGITEK 8.9(0.35") A2 F H I J B 33.0 (1.299") G1 G2 25.4 (1.0") E M L K C PIN NO.1 D2 D1 1.8(0.071") 8.5 (0.335") 6.05±0.5 18.1(0.713") Note : 1.All dimension are in millimeters and (lnch) tolerance is ± 0.25(0.01") unless otherwise noted. 2.Specifications are subject to change without notice. 27.75 (1.093") LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 2/7 PART NO. LSD1015/6SBKS-XX Internal Circuit Diagram LSD1015SBKS-XX 6,18 A1 A2 B C D1 D2 E F G1 G2 H 2 22 21 16 14 10 9 4 J K L M I LDP RDP 7 19 3 23 15 12 11 24 1 13 LSD1016SBKS-XX 6,18 A1 A2 B C D1 D2 E F G1 G2 H 2 22 21 16 14 10 9 4 J K L M I LDP RDP 7 19 3 23 15 12 11 24 1 13 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 3/7 PART NO.LSD1015/6SBKS-XX Electrical Connection PIN NO. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 LSD1015SBKS-XX Anode LDP Anode A1 Anode H Anode F No Pin Common Cathode Anode G1 No Pin Anode E Anode D2 Anode M Anode L Anode RDP Anode D1 Anode K Anode C No Pin Common Cathode Anode G2 No Pin Anode B Anode A2 Anode J Anode I PIN NO. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 LSD1016SBKS-XX Cathode LDP Cathode A1 Cathode H Cathode F No Pin Commom Anode Cathode G1 No Pin Cathode E Cathode D2 Cathode M Cathode L Cathode RDP Cathode D1 Cathode K Cathode C No Pin Commom Anode Cathode G2 No Pin Cathode B Cathode A2 Cathode J Cathode I LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LSD1015/6SBKS-XX Page 4/7 Absolute Maximum Ratings at Ta=25 ℃ Ratings Symbol Parameter UNIT SBKS Forward Current Per Chip IF 30 mA Peak Forward Current Per Chip (Duty 1/10,0.1ms Pulse Width) IFP 100 mA Power Dissipation Per Chip PD 120 mW Ir 50 μA Electrostatic Discharge( * ) ESD 2000 V Operating Temperature Topr -25 ~ +85 ℃ Storage Temperature Tstg -25 ~ +85 ℃ Reverse Current Per Any Chip Solder Temperature 1/16 Inch Below Seating Plane For 3 Seconds At 260 ℃ Static Electricity or power surge will damage the LED. Use of a conductive wrist band or anti-electrosatic * glove is recommended when handing these LED. All devices, equipment and machinery must be properly grounded. Part Selection And Application Information(Ratings at 25℃) common cathode Material Emitted or anode CHIP PART NO Vf(v) Iv(mcd) Typ. Max. Min. Typ. 3.5 4.2 10.5 18.0 IV-M Common Cathode LSD1015SBKS-XX InGaN/SiC Blue LSD1016SBKS-XX Electrical λD △λ (nm) (nm) 475 26 Common Anode Note : 1.The forward voltage data did not including ±0.1V testing tolerance. 2. The luminous intensity data did not including ±15% testing tolerance. 2:1 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LSD1015/6SBKS-XX Page 5/7 Test Condition For Each Parameter Symbol Unit Test Condition Forward Voltage Per Chip Vf volt If=20mA Luminous Intensity Per Chip Iv mcd If=10mA λD nm If=20mA △λ nm If=20mA Ir μA Vr=5V Parameter Dominant Wavelength Spectral Line Half-Width Reverse Current Any Chip Luminous Intensity Matching Ratio IV-M LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LSD1015/6SBKS-XX Page 6/7 Typical Electro-Optical Characteristics Curve SBK-S CHIP Fig.2 Relative Intensity vs. Forward Current 30 1.5 Relative Intensity Normalize @20mA Forward Current(mA) Fig.1 Forward current vs. Forward Voltage 25 20 15 10 5 0 1 2 3 4 1.25 1.0 0.75 0.5 0.25 0 5 0 5 Relative Intensity@20mA Forward Current@20mA 40 30 20 10 0 50 75 Ambient Temperature( ℃) 20 25 30 Fig.4 Relative Intensity vs. Wavelength Fig.3 Forward Current vs. Temperature 25 15 Forward Current(mA) Forward Voltage(V) 0 10 100 1.0 0.5 0 380 430 480 530 580 Wavelength (nm) 630 680 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 7/7 PART NO. LSD1015/6SBKS-XX Reliability Test: Test Item Test Condition Description Reference Standard Operating Life Test 1.Under Room Temperature 2.If=10mA 3.t=1000 hrs (-24hrs, +72hrs) This test is conducted for the purpose of detemining the resisance of a part in electrical and themal stressed. MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1 High Temperature Storage Test 1.Ta=105 ℃±5 ℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under ondition of high temperature for hours. MIL-STD-883:1008 JIS C 7021: B-10 Low Temperature Storage Test 1.Ta=-40 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of low temperature for hours. High Temperature High Humidity Test 1.Ta=65 ℃±5℃ 2.RH=90 %~95 % 3.t=240hrs ±2hrs The purpose of this test is the resistance of the device under tropical for hous. 1.Ta=105 ℃±5 ℃&-40 ℃±5℃ (10min) (10min) 2.total 10 cycles The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011 Solder Resistance Test 1.T.Sol=260 ℃±5℃ 2.Dwell time= 10 ±1sec. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1 Solderability Test 1.T.Sol=230 ℃±5℃ 2.Dwell time=5 ±1sec This test intended to see soldering well performed or not. MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2 Thermal Shock Test JIS C 7021: B-12 MIL-STD-202:103B JIS C 7021: B-11