MC74LVX541 Octal Bus Buffer The MC74LVX541 is an advanced high speed CMOS octal bus buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The MC74LVX541 is a noninverting type. When either OE1 or OE2 are high, the terminal outputs are in the high impedance state. The internal circuit is composed of three stages, including a buffer output which provides high noise immunity and stable output. The inputs tolerate voltages up to 7 V, allowing the interface of 5 V systems to 3 V systems. • • • • • • • • • • • http://onsemi.com MARKING DIAGRAMS SOIC–20 DW SUFFIX CASE 751D High Speed: tPD = 5.0 ns (Typ) at VCC = 3.3V Low Power Dissipation: ICC = 4 A (Max) at TA = 25°C High Noise Immunity: VNIH = VNIL = 28% VCC Power Down Protection Provided on Inputs Balanced Propagation Delays Designed for 2 V to 3.6 V Operating Range Low Noise: VOLP = 1.2 V (Max) Pin and Function Compatible with Other Standard Logic Families Latchup Performance Exceeds 300 mA ESD Performance: HBM > 2000 V; Machine Model > 200 V Chip Complexity: 134 FETs or 33.5 Equivalent Gates 20 LVX541 AWLYYWW 1 20 TSSOP–20 DT SUFFIX CASE 948E LVX541 AWLYWW 1 SOIC EIAJ–20 M SUFFIX CASE 967 20 LVX541 ALYW 1 A WL YY WW = Assembly Location = Wafer Lot = Year A = Work Week WL Y WW A L Y W = Assembly Location = Wafer Lot = Year = Work Week = Assembly Location = Wafer Lot = Year = Work Week ORDERING INFORMATION Semiconductor Components Industries, LLC, 2002 June, 2002 – Rev. 1 1 Device Package Shipping MC74LVX541DW SOIC–20 38 Units/Rail MC74LVX541DT TSSOP–20 75 Units/Rail MC74LVX541DTR2 TSSOP–20 2500 Units/Reel MC74LVX541M SOIC EIAJ–20 40 Units/Rail MC74LVX541MEL SOIC EIAJ–20 2000 Units/Reel Publication Order Number: MC74LVX541/D MC74LVX541 LOGIC DIAGRAM A1 A2 A3 DATA INPUTS A4 A5 A6 A7 A8 OUTPUT ENABLES 2 18 3 17 4 16 5 15 6 14 7 13 8 12 9 11 Y1 Y2 Y3 Y4 NONINVERTING OUTPUTS Y5 Y6 Y7 Y8 1 OE1 19 OE2 PIN ASSIGNMENT OE1 1 20 VCC FUNCTION TABLE A1 2 19 OE2 Inputs A2 3 18 Y1 OE1 OE2 A A3 4 17 Y2 A4 5 16 Y3 L L H X L L X H L H X X A5 6 15 Y4 A6 7 14 Y5 A7 8 13 Y6 A8 9 12 Y7 10 11 Y8 GND Output Y L H Z Z IEC LOGIC DIAGRAM QE1 QE2 A1 A2 A3 A4 A5 A6 A7 A8 & 1 EN 19 2 1 3 18 17 4 16 5 15 6 14 7 13 8 12 9 11 http://onsemi.com 2 Y1 Y2 Y3 Y4 Y5 Y6 Y7 Y8 MC74LVX541 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ MAXIMUM RATINGS* Symbol Value Unit VCC DC Supply Voltage Parameter – 0.5 to + 7.0 V Vin DC Input Voltage – 0.5 to + 7.0 V Vout DC Output Voltage – 0.5 to VCC + 0.5 V IIK Input Diode Current – 20 mA IOK Output Diode Current ± 20 mA Iout DC Output Current, per Pin ± 25 mA ICC DC Supply Current, VCC and GND Pins ± 50 mA PD Power Dissipation in Still Air, 500 450 mW Tstg Storage Temperature – 65 to + 150 °C SOIC Packages† TSSOP Package† This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high–impedance circuit. For proper operation, Vin and Vout should be constrained to the range GND (Vin or Vout) VCC. Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or V CC ). Unused outputs must be left open. * Absolute maximum continuous ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions beyond those indicated may adversely affect device reliability. Functional operation under absolute–maximum–rated conditions is not implied. †Derating — SOIC Packages: – 7 mW/°C from 65° to 125°C TSSOP Package: – 6.1 mW/°C from 65° to 125°C ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎ ÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ RECOMMENDED OPERATING CONDITIONS Symbol Parameter VCC DC Supply Voltage Vin DC Input Voltage Vout DC Output Voltage TA Operating Temperature, All Package Types tr, tf Input Rise and Fall Time VCC = 3.3V ±0.3V Min Max Unit 2.0 3.6 V 0 5.5 V 0 VCC V –40 + 85 °C 0 100 ns/V DC ELECTRICAL CHARACTERISTICS Symbol Parameter Test Conditions Min 1.50 2.0 2.4 VIH Minimum High–Level Input Voltage 2.0 3.0 3.6 VIL Maximum Low–Level Input Voltage 2.0 3.0 3.6 VOH Minimum High–Level Output Voltage Vin i = VIH or VIL IOH = – 50 A IOH = – 50 A IOH = – 4 mA 2.0 30 3.0 3.0 VOL Maximum Low–Level Output Voltage Vin i = VIH or VIL IOL = 50 A IOL = 50 A IOL = 4 mA 2.0 30 3.0 3.0 http://onsemi.com 3 TA = 25°C VCC V Typ Max TA = – 40 to 85°C Min 1.50 2.0 2.4 0.50 0.80 0.80 1.9 29 2.9 2.58 Max 2.0 30 3.0 0.0 00 0.0 V 0.50 0.80 0.80 1.9 29 2.9 2.48 0.1 01 0.1 0.36 Unit V V 0.1 01 0.1 0.44 V MC74LVX541 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ Î ÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎ DC ELECTRICAL CHARACTERISTICS TA = 25°C TA = – 40 to 85°C Test Conditions VCC V Max Unit Iin Maximum Input Leakage Current Vin = 5.5 V or GND 0 to 3.6 ±0.1 ±1.0 A IOZ Maximum Three–State Leakage Current Vin = VIL or VIH Vout = VCC or GND 3.6 ±0.2 5 ±2.5 A ICC Maximum Quiescent Supply Current Vin = VCC or GND 3.6 4.0 40.0 A Symbol Parameter Min Typ Max Min AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 ns) TA = 25°C Symbol tPLH, tPHL tPZL, tPZH tPLZ, tPHZ tOSLH, tOSHL Parameter Test Conditions Maximum Propagation Delay, A to Y Output Enable TIme, OE to Y Output Disable Time, OE to Y Output to Output Skew Min TA = – 40 to 85°C Typ Max Min Max Unit ns VCC = 2.7 V CL = 15 pF CL = 50 pF 5.0 7.5 7.0 10.5 1.0 1.0 8.5 12.0 VCC = 3.3 ± 0.3 V CL = 15 pF CL = 50 pF 3.5 5.0 5.0 7.0 1.0 1.0 6.0 8.0 VCC = 2.7 V RL = 1 k CL = 15 pF CL = 50 pF 6.8 9.3 10.5 14.0 1.0 1.0 12.5 16.0 VCC = 3.3 ± 0.3 V RL = 1 k CL = 15 pF CL = 50 pF 4.7 6.2 7.2 9.2 1.0 1.0 8.5 10.5 VCC = 2.7 V RL = 1 k CL = 50 pF 11.2 15.4 1.0 17.5 VCC = 3.3 ± 0.3 V RL = 1 k CL = 50 pF 6.0 8.8 1.0 10.0 VCC = 2.7 V (Note 1) CL = 50 pF 1.5 1.5 ns VCC = 3.3 ± 0.3 V (Note 1) CL = 50 pF 1.0 1.0 ns 10 10 pF Cin Maximum Input Capacitance 4.0 Cout Maximum Three–State Output Capacitance (Output in High Impedance State) 6.0 ns ns pF Typical @ 25°C, VCC = 5.0V CPD 18 Power Dissipation Capacitance (Note 2) pF 1. Parameter guaranteed by design. tOSLH = |tPLHm – tPLHn|, tOSHL = |tPHLm – tPHLn|. 2. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin + ICC/8 (per bit). CPD is used to determine the no–load dynamic power consumption; PD = CPD VCC2 fin + ICC VCC. NOISE CHARACTERISTICS (Input tr = tf = 3.0 ns, CL = 50 pF, VCC = 3.3 V) TA = 25°C Symbol Parameter Typ Max Unit VOLP Quiet Output Maximum Dynamic VOL 0.5 0.8 V VOLV Quiet Output Minimum Dynamic VOL –0.5 –0.8 V VIHD Minimum High Level Dynamic Input Voltage 2.0 V VILD Maximum Low Level Dynamic Input Voltage 0.8 V http://onsemi.com 4 MC74LVX541 SWITCHING WAVEFORMS VCC VCC A 50% 50% 50% tPZL tPHL tPLH Y OE1 or OE2 GND tPLZ HIGH IMPEDANCE GND 50% VCC Y tPZH 50% VCC VOL +0.3 V tPHZ 50% VCC Y Figure 1. VOH -0.3 V HIGH IMPEDANCE Figure 2. TEST CIRCUITS TEST POINT TEST POINT OUTPUT DEVICE UNDER TEST OUTPUT DEVICE UNDER TEST CL* *Includes all probe and jig capacitance 1 k CL* CONNECT TO VCC WHEN TESTING tPLZ AND tPZL. CONNECT TO GND WHEN TESTING tPHZ AND tPZH. *Includes all probe and jig capacitance Figure 3. Figure 4. INPUT EQUIVALENT CIRCUIT INPUT http://onsemi.com 5 MC74LVX541 PACKAGE DIMENSIONS SOIC–20 DW SUFFIX PLASTIC SOIC WIDE PACKAGE CASE 751D–05 ISSUE F –A– 20 11 –B– 10X P 0.010 (0.25) 1 B M M 10 20X D 0.010 (0.25) M T A B S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.150 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.13 (0.005) TOTAL IN EXCESS OF D DIMENSION AT MAXIMUM MATERIAL CONDITION. DIM A B C D F G J K M P R J S F R X 45 C SEATING PLANE –T– G 18X MILLIMETERS MIN MAX 12.65 12.95 7.40 7.60 2.35 2.65 0.35 0.49 0.50 0.90 1.27 BSC 0.25 0.32 0.10 0.25 0 7 10.05 10.55 0.25 0.75 INCHES MIN MAX 0.499 0.510 0.292 0.299 0.093 0.104 0.014 0.019 0.020 0.035 0.050 BSC 0.010 0.012 0.004 0.009 0 7 0.395 0.415 0.010 0.029 M K TSSOP–20 DT SUFFIX PLASTIC TSSOP PACKAGE CASE 948E–02 ISSUE A 20X 0.15 (0.006) T U 2X K REF 0.10 (0.004) S L/2 20 M T U S V S 11 B –U– L PIN 1 IDENT ÍÍÍÍ ÍÍÍÍ ÍÍÍÍ K K1 J J1 SECTION N–N 1 10 0.25 (0.010) N 0.15 (0.006) T U S M A –V– NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE. 5. DIMENSION K DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE K DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 7. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE -W-. N F DETAIL E –W– C D G H DETAIL E 0.100 (0.004) –T– SEATING PLANE http://onsemi.com 6 DIM A B C D F G H J J1 K K1 L M MILLIMETERS MIN MAX 6.40 6.60 4.30 4.50 --1.20 0.05 0.15 0.50 0.75 0.65 BSC 0.27 0.37 0.09 0.20 0.09 0.16 0.19 0.30 0.19 0.25 6.40 BSC 0 8 INCHES MIN MAX 0.252 0.260 0.169 0.177 --0.047 0.002 0.006 0.020 0.030 0.026 BSC 0.011 0.015 0.004 0.008 0.004 0.006 0.007 0.012 0.007 0.010 0.252 BSC 0 8 MC74LVX541 PACKAGE DIMENSIONS SOIC EIAJ–20 M SUFFIX PLASTIC SOIC EIAJ PACKAGE CASE 967–01 ISSUE O 20 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS AND ARE MEASURED AT THE PARTING LINE. MOLD FLASH OR PROTRUSIONS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 5. THE LEAD WIDTH DIMENSION (b) DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE LEAD WIDTH DIMENSION AT MAXIMUM MATERIAL CONDITION. DAMBAR CANNOT BE LOCATED ON THE LOWER RADIUS OR THE FOOT. MINIMUM SPACE BETWEEN PROTRUSIONS AND ADJACENT LEAD TO BE 0.46 ( 0.018). LE 11 Q1 E HE 1 M L 10 DETAIL P Z D VIEW P e A c A1 b 0.13 (0.005) M 0.10 (0.004) http://onsemi.com 7 DIM A A1 b c D E e HE L LE M Q1 Z MILLIMETERS MIN MAX --2.05 0.05 0.20 0.35 0.50 0.18 0.27 12.35 12.80 5.10 5.45 1.27 BSC 7.40 8.20 0.50 0.85 1.10 1.50 10 0 0.70 0.90 --0.81 INCHES MIN MAX --0.081 0.002 0.008 0.014 0.020 0.007 0.011 0.486 0.504 0.201 0.215 0.050 BSC 0.291 0.323 0.020 0.033 0.043 0.059 10 0 0.028 0.035 --0.032 MC74LVX541 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada Email: [email protected] JAPAN: ON Semiconductor, Japan Customer Focus Center 4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031 Phone: 81–3–5740–2700 Email: [email protected] ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. N. American Technical Support: 800–282–9855 Toll Free USA/Canada http://onsemi.com 8 MC74LVX541/D