Order this document by MCR72/D SEMICONDUCTOR TECHNICAL DATA Reverse Blocking Triode Thyristors . . . designed for industrial and consumer applications such as temperature, light and speed control; process and remote controls; warning systems; capacitive discharge circuits and MPU interface. • Center Gate Geometry for Uniform Current Density • All Diffused and Glass-Passivated Junctions for Parameter Uniformity and Stability • Small, Rugged Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability • Low Trigger Currents, 200 µA Maximum for Direct Driving from Integrated Circuits SCRs 8 AMPERES RMS 50 thru 800 VOLTS G C A CASE 221A-04 (TO-220AB) STYLE 3 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) Rating Symbol Peak Repetitive Forward and Reverse Blocking Voltage(1) (TJ = – 40 to 110°C, 1/2 Sine Wave, RGK = 1kΩ) VDRM or VRRM MCR72-2 MCR72-3 MCR72-4 MCR72-6 MCR72-8 MCR72-10 On-State RMS Current (TC = 83°C) Value Unit Volts 50 100 200 400 600 800 IT(RMS) 8 Amps ITSM 100 Amps I2t 40 A2s Peak Gate Voltage (t VGM ±5 Volts Peak Gate Current (t IGM 1 Amp PGM 5 Watts PG(AV) 0.75 Watts TJ –40 to +110 °C Peak Non-repetitive Surge Current (1/2 Cycle, 60 Hz, TJ = –40 to 110°C) Circuit Fusing (t = 8.3 ms) p 10 µs) p 10 µs) Peak Gate Power (t p 10 µs) Average Gate Power Operating Junction Temperature Range 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Motorola Thyristor Device Data Motorola, Inc. 1995 (cont.) 1 MAXIMUM RATINGS — continued Rating Symbol Value Unit Tstg –40 to + 150 °C — 8 in. lb. Symbol Max Unit Thermal Resistance, Junction to Case RθJC 2.2 °C/W Thermal Resistance, Junction to Ambient RθJA 60 °C/W Storage Temperature Range Mounting Torque THERMAL CHARACTERISTICS Characteristic ELECTRICAL CHARACTERISTICS (TC = 25°C, RGK = 1 kΩ unless otherwise noted.) Characteristic Symbol Min Typ Max Unit — — — — 10 500 µA µA VTM — 1.7 2 Volts Gate Trigger Current (Continuous dc)(2) (VD = 12 V, RL = 100 Ω) IGT — 30 200 µA Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 Ω) (VD = Rated VDRM, RL = 10 kΩ, TJ = 110°C) VGT — 0.1 0.5 — 1.5 — IH — — 6 mA dv/dt — 10 — V/µs tgt — 1 — µs Peak Forward or Reverse Blocking Current(1) (VAK = Rated VDRM or VRRM) TJ = 25°C TJ = 110°C On-State Voltage (ITM = 16 A Peak, Pulse Width IDRM, IRRM p 1 ms, Duty Cycle p 2%) Holding Current (VD = 12 V, ITM = 100 mA) Critical Rate-of-Rise of Forward Blocking Voltage (VD = Rated VDRM, TJ = 110°C, Exponential Waveform) Gate Controlled Turn-On Time (VD = Rated VDRM, ITM = 16 A, IG = 2 mA) Volts 1. Ratings apply for negative gate voltage or RGK = 1 kΩ. Devices shall not have a positive gate voltage concurrently with a negative voltage on the anode. Devices should not be tested with a constant current source for forward and reverse blocking capability such that the voltage applied exceeds the rated blocking voltage. 2. Does not include RGK current. FIGURE 2 – ON-STATE POWER DISSIPATION PAV , AVERAGE POWER DISSIPATION (WATTS) TC , MAXIMUM CASE TEMPERATURE (° C) FIGURE 1 – AVERAGE CURRENT DERATING 110 100 α α = Conduction Angle α = 30° 90 60° 90° 180° 80 dc 70 0 2.0 4.0 6.0 IT(AV), AVERAGE ON-STATE CURRENT (AMP) 2 8.0 16 dc 12 α 180° α = Conduction Angle 8.0 α = 30° 90° 60° 4.0 0 0 2.0 4.0 6.0 8.0 IT(AV), AVERAGE ON-STATE CURRENT (AMP) Motorola Thyristor Device Data FIGURE 3 – NORMALIZED GATE CURRENT FIGURE 4 – GATE VOLTAGE VGT , GATE TRIGGER VOLTAGE (VOLTS) NORMALIZED GATE CURRENT 3.0 2.0 VD = 12 Vdc 1.0 0.5 0.3 –40 –20 0 20 40 60 80 90 TJ, JUNCTION TEMPERATURE (°C) Motorola Thyristor Device Data 100 120 140 0.7 0.6 VD = 12 Vdc 0.5 0.4 0.3 0.2 0.1 –60 –40 –20 0 20 40 60 80 100 120 TJ, JUNCTION TEMPERATURE (°C) 3 PACKAGE DIMENSIONS –T– B F T NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. SEATING PLANE C S 4 Q A 1 2 3 STYLE 3: PIN 1. 2. 3. 4. U H K Z R L V J G D N CATHODE ANODE GATE ANODE DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.014 0.022 0.500 0.562 0.045 0.055 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ––– ––– 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.36 0.55 12.70 14.27 1.15 1.39 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ––– ––– 2.04 CASE 221A-04 (TO–220AB) Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. 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ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 4 ◊ Motorola Thyristor Device Data *MCR72/D* MCR72/D