UOT MID

1.8mm PACKAGE
NPN PHOTOTRANSISTOR
Description
MID-18H22
Package Dimensions
The MID-18H22 is a NPN silicon phototransistor mounted in a lensed , special dark plastic package.The lens-
Unit : mm (inches )
φ1.80
(.071)
R 1.70
(.067)
2.40
(.094)
ing effect of the package allows an acceptance view
angle of 35° that is measured from the optical axis to the
3.30
(.130)
half power point .
1.40
(.055)
3.00
(.118)
1.60
(.063)
SEE NOTE 2
25.40MIN.
(1.000)
Features
0.50 TYP.
(.020)
l
Wide range of collector current
l
Lensed for high sensitivity
l
Low cost plastic package
l
Good spectral matching IRED (λp=850nm) type.
1.00MIN.
(.040)
2.54 NOM.
(.100)
E
SEE NOTE 3
C
Notes :
1. Tolerance is ± 0.25mm (.010") unless otherwise noted .
2. Protruded resin under flange is 0.8 mm (.031") max
3. Lead spacing is measured where the leads emerge from the package.
Absolute Maximum Ratings
o
@ TA=25 C
Parameter
Maximum Rating
Unit
Power Dissipation
100
mW
Collector-Emitter Voltage
30
V
Emitter-Collector Voltage
5
V
o
o
o
o
Operating Temperature Range
-55 C to +100 C
Storage Temperature Range
-55 C to +100 C
Lead Soldering Temperature
260oC for 5 seconds
Unity Opto Technology Co., Ltd.
02/04/2002
MID-18H22
.
Optical-Electrical Characteristics
o
Symbol
V(BR)CEO
Min.
30
V(BR)ECO
5
10
1
0.1
0.01
0.001
0
40
80
120
TA- Ambient Temperature -oC
FIG.1 COLLECTOR DARK CURRENT
VS AMBIENT TEMPERATURE
200
Vcc = 5 V
VRL= 1 V
F = 100 Hz
PW = 1 ms
160
120
80
40
0
0
2
4
6
8
10
RL - Load Resistance - KΩ
FIG.3 RISE AND FALL TIME
VS LOAD RESISTANCE
0.4
V
µS
15
15
ICEO
100
IC(ON)
nA
2.2
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
mA
Vce = 5 V
Ee = 0.1 mW/cm2
@λ = 850 nm
-75
-25
25
75
125
TA- Ambient Temperature -oC
FIG.2 NORMALIZED COLLECTOR CURRENT
VS AMBIENT TEMPERATURE
10
Vce = 5 V
8
6
4
2
0
0
0.1 0.2 0.3 0.4 0.5 0.6
2
Ee - Irradiance - mW/cm
FIG.4 RELATIVE COLLECTOR CURRENT
VS IRRADIANCE
0° 10° 20°
100%
90%
80%
70%
60%
50%
40%
30%
20%
10%
0%
Relative Sensitivity
Iceo-Collector Dark Current -µA
Tr Tf Rise and Fall Time - µS
Relative Spectral Sensitivity
100
V
Tr
Tf
Typical Optical-Electrical Characteristic Curves
1000
Typ .
VCE(SAT)
IC Normalized Collector Current
Test Conditions
Ic=0.1mA
Ee=0
Ie=0.1mA
Ee=0
Ic=0.5mA
Ee=0.1mW/cm2
VCC =5V, RL=1KΩ
IC=1mA
VCE=10V
Ee=0
VCE=5V
Ee=0.1mW/cm2
Relative Collector Current (mA)
Parameter
Collector-Emitter
Breakdown Voltage
Emitter-Collector
Breakdown Voltage
Collector-Emitter
Saturation Voltage
Rise Time
Fall Time
Collector Dark
Current
On State Collector
Current
@ TA=25 C
Max.
Unit
V
600
700
800
900
1000
Wavelength-nm
FIG.5 RELATIVE SPECTRAL SENSITIVITY
VS. WAVELENGTH
30°
40°
1.0
0.9
50°
60°
70°
80°
90°
0.8
0.5 0.3 0.1
0.2 0.4 0.6
FIG.6 SENSITIVITY DIAGRAM
Unity Opto Technology Co., Ltd.
02/04/2002