Intelligent Power Devices (IPDs) MIP301 Silicon MOS IC ■ Features ■ Applications 8 2 7 3 6 4 5 0.3 4.2±0.3 ■ Absolute Maximum Ratings (Ta = 25 ± 3°C) Parameter Symbol 0.2±0.1 0.65 1.5±0.2 0.1±0.1 1.27 ● IPD for DC/DC converter 1 6.5±0.3 Ratings Unit Drain voltage VD 90 V Control voltage VC 8 V Input voltage VIN 30 V Output current ID 1.1 A Control current IC 0.1 A Channel temperature Tch 150 °C Storage temperature Tstg −55 to +150 °C 5.0±0.3 0.6±0.3 unit: mm 0.4±0.25 ● 100V high breakdown voltage MOS FET and CMOS control circuits are integrated into one chip ● 5V and 3 - 5W output with 24VDC input (Flyback method) 1: VIN 5: Drain 2: Source 6: Source 3: Source 7: Source 4: Control 8: Source SO-8P Type Package ■ Block Diagram Control pin Shutdown/Auto-restart Shunt regulator + - 5.7V 4.7V 0 Auto-restart 1 Power supply for internal circuit T + PWM control current Auto-restart current-source S R Restarting trigger circuit + D Q R Thermal shutdown circuit VIN Drain pin Ron X ID Q + - Q Power MOS FET Q Max Duty Clock Sawtooth Low pass filter S + R Q Q Leading edge blanking Minimum ON-time delay circuit Source pin 1 Intelligent Power Devices (IPDs) MIP301 ■ Electrical Characteristics (TC = 25 ± 2°C) Parameter Control functions Auto-restart Circuit protection min typ max Unit Output frequency fOSC Symbol IC = 2mA Conditions 180 200 220 kHz Maximum duty cycle MAXDC IC = 2mA 77 80 83 % Minimum duty cycle MINDC IC = 10mA 0 3 5 % PWM gain GPWM −21 −16 Circuit current Is 0.8 2.5 Dynamic impedance ZC 10 15 IC = 3mA VC = 0 Control pin charging current IC Auto-restart threshold voltage VC(on) Lockout threshold voltage VC(off) Auto-restart hysteresis voltage ∆VC Self-protection current limit ILIMIT Leading edge blanking delay ton(BLK) IC = 3mA Current limit delay td(OCL) IC = 3mA Thermal shutdown temperature TOTP VC = 5V Power-up reset threshold voltage VC reset Output mA 25 Ω mA −2 −1.5 − 0.8 mA 5 5.7 6.3 V 4 4.7 5.3 V 0.5 1 1.5 V 1 1.1 A µs 0.25 µs 0.1 °C 130 140 150 2.3 3.3 4.2 V 1.8 2.2 Ω 0.01 0.25 mA ON-state resistance RDS(on) ID = 1A OFF-state current IDSS VDS = 82V Output MOS FET disabled Breakdown voltage VDSS ID = 0.25mA Output MOS FET disabled Rise time tr 0.1 0.2 µs Fall time tf 0.1 0.2 µs Start threshold voltage VIN(START) 16 18.2 V Stop threshold voltage VIN(STOP) 10 12.2 V Power supply voltage Input hysteresis voltage Shunt regulator voltage ∆VIN VC Control supply/discharge current ICD 2 4 −1.2 −2.4 −1.9 0.9 IC = 3mA −11 %/mA V 92 7.5 V IC = 3mA 5.4 5.7 6.1 V Output MOS FET disabled 0.5 0.8 1.1 mA 5.5