ONSEMI MMBD101LT1

MBD101, MMBD101LT1
Preferred Device
Schottky Barrier Diodes
Designed primarily for UHF mixer applications but suitable also for
use in detector and ultra−fast switching circuits. Supplied in an
inexpensive plastic package for low−cost, high−volume consumer
requirements. Also available in Surface Mount package.
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Features
•
•
•
•
Low Noise Figure − 6.0 dB Typ @ 1.0 GHz
Very Low Capacitance − Less Than 1.0 pF
High Forward Conductance − 0.5 V (Typ) @ IF = 10 mA
Pb−Free Packages are Available
SILICON SCHOTTKY
BARRIER DIODES
MARKING
DIAGRAMS
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Reverse Voltage
VR
7.0
V
Forward Power Dissipation
TA = 25°C
MBD101
MMBD101LT1
PF
Derate above 25°C
TO−92 2−Lead
CASE 182
STYLE 1
1
2
MBD101
MMBD101LT1
280
225
mW
2.2
1.8
mW/°C
Junction Temperature
TJ
+150
°C
Storage Temperature Range
Tstg
−55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
MBD
101
AYWW G
G
2
CATHODE
3
1
1
ANODE
SOT−23 (TO−236)
CASE 318
STYLE 8
4M M G
G
2
3
CATHODE
1
ANODE
1
(Pin 2 Not Connected)
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)R
7.0
10
−
V
Diode Capacitance
(VR = 0, f = 1.0 MHz,
Note 1, page 2)
CD
−
0.88
1.0
pF
Forward Voltage
(IF = 10 mA)
VF
−
0.5
0.6
V
Reverse Leakage
(VR = 3.0 V)
IR
−
Reverse Breakdown Voltage
(IR = 10 mA)
A
= Assembly Location
Y
= Year
WW = Work Week
4M = Device Code (SOT−23)
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
0.02
mA
0.25
Device
MBD101
MBD101G
MMBD101LT1
MMBD101LT1G
Package
Shipping †
TO−92
5000 Units / Box
TO−92
(Pb−Free)
5000 Units / Box
SOT−23
3000 / Tape & Reel
SOT−23
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 3
1
Publication Order Number:
MBD101/D
MBD101, MMBD101LT1
TYPICAL CHARACTERISTICS
(TA = 25°C unless noted)
100
0.5
IF, FORWARD CURRENT (mA)
IR, REVERSE LEAKAGE ( m A)
1.0
0.7
VR = 3.0 V
0.2
0.1
0.07
0.05
TA = 85°C
10
TA = −40°C
1.0
TA = 25°C
0.02
0.01
30
40
50
60
70
80
90 100 110
TA, AMBIENT TEMPERATURE (°C)
120
0.1
130
0.3
0.4
Figure 2. Forward Voltage
Figure 1. Reverse Leakage
1.0
11
10
LOCAL OSCILLATOR FREQUENCY = 1.0 GHz
(TEST CIRCUIT IN FIGURE 5)
9.0
0.9
NF, NOISE FIGURE (dB)
C , CAPACITANCE (pF)
D
0.5
0.6
0.7
VF, FORWARD VOLTAGE (VOLTS)
0.8
0.7
8.0
7.0
6.0
5.0
4.0
3.0
2.0
0.6
0
1.0
2.0
3.0
1.0
4.0
0.1
0.2
0.5
1.0
2.0
VR, REVERSE VOLTAGE (VOLTS)
PLO, LOCAL OSCILLATOR POWER (mW)
Figure 3. Capacitance
Figure 4. Noise Figure
NOTES ON TESTING AND SPECIFICATIONS
LOCAL
OSCILLATOR
UHF
NOISE SOURCE
H.P. 349A
DIODE IN
TUNED
MOUNT
NOISE
FIGURE METER
H.P. 342A
IF AMPLIFIER
NF = 1.5 dB
f = 30 MHz
5.0
Note 1 — CD is measured using a capacitance bridge (Boonton
Electronics Model 75A or equivalent).
Note 2 — Noise figure measured with diode under test in tuned
diode mount using UHF noise source and local oscillator
(LO) frequency of 1.0 GHz. The LO power is adjusted
for 1.0 mW. IF amplifier NF = 1.5 dB, f = 30 MHz, see
Figure 5.
Note 3 — LS is measured on a package having a short instead of a
die, using an impedance bridge (Boonton Radio Model
250A RX Meter).
Figure 5. Noise Figure Test Circuit
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2
10
MBD101, MMBD101LT1
PACKAGE DIMENSIONS
TO−92 TWO LEAD
TO−226AC
CASE 182−06
ISSUE L
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND ZONE R IS
UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
B
R
SEATING
PLANE
D
ÉÉ
ÉÉ
L
P
J
K
SECTION X−X
X X
D
G
H
V
1
2
C
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.050 BSC
0.100 BSC
0.014
0.016
0.500
−−−
0.250
−−−
0.080
0.105
−−− 0.050
0.115
−−−
0.135
−−−
STYLE 1:
PIN 1. ANODE
2. CATHODE
N
N
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3
MILLIMETERS
MIN
MAX
4.45
5.21
4.32
5.33
3.18
4.19
0.407
0.533
1.27 BSC
2.54 BSC
0.36
0.41
12.70
−−−
6.35
−−−
2.03
2.66
−−−
1.27
2.93
−−−
3.43
−−−
MBD101, MMBD101LT1
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
D
SEE VIEW C
3
HE
E
c
1
2
b
DIM
A
A1
b
c
D
E
e
L
L1
HE
0.25
e
q
A
L
A1
L1
VIEW C
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
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USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5773−3850
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4
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
MBD101/D