MMBD172SE SILICON EPITAXIAL PLANAR DIODE for VHF~UHF band RF attenuator applications 3 1 2 Marking Code: FP SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Reverse Voltage VR 50 V Forward Current IF 50 mA Junction Temperature Tj 125 O Storage Temperature Range Ts - 55 to + 125 O C C Characteristics at Ta = 25 OC Parameter Symbol Min. Typ. Max. Unit Forward Voltage at IF = 10 mA VF - - 1 V Reverse Voltage at IR = 10 μA VR 50 - - V Reverse Current at VR = 50 V IR - - 0.1 μA Total Capacitance at VR = 50 V, f = 1 MHz CT - 0.25 - pF rs - 7 - Ω 1) Series Resistance at IF = 10 mA, f = 100 MHz 1) CT is measured by 3 terminal method with capacitance bridge. SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 13/12/2006