FREESCALE MRF6S19200H

Freescale Semiconductor
Technical Data
Document Number: MRF6S19200H
Rev. 0, 3/2008
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
MRF6S19200HR3
MRF6S19200HSR3
Designed for CDMA base station applications with frequencies from 1930 to
1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be
used in Class AB and Class C for PCN - PCS/cellular radio applications.
• Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ =
1600 mA, Pout = 56 Watts Avg., Full Frequency Band, 3GPP Test Model 1,
64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF.
Power Gain — 17.9 dB
Drain Efficiency — 29.5%
Device Output Signal PAR — 5.9 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset — - 36 dBc in 3.84 MHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 1960 MHz, 130 Watts CW
Output Power
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate - Source Voltage Range for Improved Class C
Operation
• Optimized for Doherty Applications
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
1930 - 1990 MHz, 56 W AVG., 28 V
SINGLE W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF6S19200HR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF6S19200HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
VDSS
- 0.5, +66
Vdc
Gate - Source Voltage
VGS
- 6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (1,2)
TJ
225
°C
CW
130
0.49
W
W/°C
Symbol
Value (2,3)
CW Operation @ TC = 25°C
Derate above 25°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 110°C, 89 W CW
Case Temperature 100°C, 55 W CW
RθJC
0.35
0.36
Unit
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6S19200HR3 MRF6S19200HSR3
1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1B (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 66 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
10
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 372 μAdc)
VGS(th)
1
2
3
Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 1600 mAdc, Measured in Functional Test)
VGS(Q)
2
3
4
Vdc
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 3.71 Adc)
VDS(on)
0.1
0.2
0.3
Vdc
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
2.3
—
pF
Output Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
185
—
pF
Input Capacitance
(VDS = 28 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
Ciss
—
503
—
pF
Off Characteristics
On Characteristics
Dynamic Characteristics (1)
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1600 mA, Pout = 56 W Avg., f = 1932.5 MHz and
f = 1987.5 MHz, Single - Carrier W - CDMA, 3GPP Test Model 1, 64 DPCH, 50% Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on
CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Power Gain
Gps
15
17.9
19
dB
Drain Efficiency
ηD
26
29.5
—
%
PAR
5.5
5.9
—
dB
ACPR
—
- 36
- 34
dBc
IRL
—
- 14
-8
dB
Output Peak - to - Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
1. Part internally matched both on input and output.
(continued)
MRF6S19200HR3 MRF6S19200HSR3
2
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1600 mA, 1930 - 1990 MHz Bandwidth
IMD Symmetry @ 130 W PEP, Pout where IMD Third Order
Intermodulation ` 30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMDsym
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
MHz
—
20
—
VBWres
—
50
—
MHz
Gain Flatness in 60 MHz Bandwidth @ Pout = 56 W Avg.
GF
—
0.6
—
dB
Average Deviation from Linear Phase in 60 MHz Bandwidth
@ Pout = 130 W CW
Φ
—
1.94
—
°
Delay
—
2.44
—
ns
Part - to - Part Insertion Phase Variation @ Pout = 130 W CW,
f = 1960 MHz, Six Sigma Window
ΔΦ
—
59.4
—
°
Gain Variation over Temperature
( - 30°C to +85°C)
ΔG
—
0.04
—
dB/°C
Average Group Delay @ Pout = 130 W CW, f = 1960 MHz
MRF6S19200HR3 MRF6S19200HSR3
RF Device Data
Freescale Semiconductor
3
B1
VBIAS
+
R1
C5
C2
C1
R2
C7
C9
VSUPPLY
+
+
C11
C14
C4
Z8
Z5
RF
INPUT
Z1
Z2
Z3
Z4
Z7
Z10
Z11
Z13
Z12
Z15
Z14
Z6
RF
OUTPUT
C13
Z9
C3
DUT
VSUPPLY
+
C6
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8, Z9
0.859″
0.470″
0.362″
0.145″
0.040″
0.418″
0.103″
0.198″
x 0.084″
x 0.084″
x 0.244″
x 1.040″
x 0.257″
x 1.040″
x 1.203″
x 0.160″
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Z10
Z11
Z12
Z13
Z14
Z15
PCB
C8
C10
C12
+
C15
0.547″ x 1.203″ Microstrip
0.119″ x 0.755″ Microstrip
0.222″ x 0.365″ Microstrip
0.225″ x 0.220″ Microstrip
0.192″ x 0.084″ Microstrip
0.843″ x 0.084″ Microstrip
Arlon CuClad 250GX - 0300 - 55 - 22, 0.030″, εr = 2.55
Figure 1. MRF6S19200HR3(HSR3) Test Circuit Schematic
Table 5. MRF6S19200HR3(HSR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1
Short Ferrite Bead
2743019447
Fair Rite
C1
10 μF, 50 V Electrolytic Capacitor
EMVY500ADA100MF55G
Nippon Chemi - Con
C2, C9, C10
0.1 μF, 100 V Capacitors
CDR33BX104AKYS
Kemet
C3, C13
33 pF Chip Capacitors
ATC100B330JT500XT
ATC
C4, C5, C6
10 pF Chip Capacitors
ATC100B100CT500XT
ATC
C7, C8
10 μF, 50 V Capacitors
GRMSSDRG1H106KA88B
Murata
C11, C12
22 μF, 35 V Tantalum Capacitors
T491X226K035AT
Kemet
C14, C15
22 μF, 50 V Electrolytic Capacitors
EMVY500ADA220MF55G
Nippon Chemi - Con
R1
1000 Ω, 1/4 W Chip Resistor
CRCW12061001FKEA
Vishay
R2
10 Ω, 1/4 W Chip Resistor
CRCW120610R1FKEA
Vishay
MRF6S19200HR3 MRF6S19200HSR3
4
RF Device Data
Freescale Semiconductor
B1
C7
C11
R1
C2
R2
C5
C4
C9
C1
C3
CUT OUT AREA
C14
C13
C10
C15
C6
C12
C8
MRF6S19200H/HS
Rev. 2
Figure 2. MRF6S19200HR3(HSR3) Test Circuit Component Layout
MRF6S19200HR3 MRF6S19200HSR3
RF Device Data
Freescale Semiconductor
5
20
30
19
29
Gps
18
17
16
28
VDD = 28 Vdc, Pout = 56 W (Avg.)
IDQ = 1600 mA, Single−Carrier W−CDMA
3.84 MHz Channel Bandwidth, Input Signal PAR = 7.5 dB
@ 0.01% Probability (CCDF)
IRL
15
−0.5
0
−1
−5
−1.5
PARC
14
−2
13
1880
1900
1920
1940
1960
2000
1980
−10
−15
−2.5
2040
2020
−20
IRL, INPUT RETURN LOSS (dB)
31
ηD
PARC (dB)
Gps, POWER GAIN (dB)
21
ηD, DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS
f, FREQUENCY (MHz)
Gps, POWER GAIN (dB)
19
18
VDD = 28 Vdc, Pout = 87 W (Avg.)
IDQ = 1600 mA, Single−Carrier W−CDMA
37
36
Gps
17
35
IRL
16
3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01%
Probability (CCDF)
15
14
−2
−5
−2.5
−10
−3
PARC
13
12
1880
−3.5
1900
1920
1940
1960
1980
2000
−4
2040
2020
−15
−20
−25
IRL, INPUT RETURN LOSS (dB)
38
ηD
PARC (dB)
20
ηD, DRAIN
EFFICIENCY (%)
Figure 3. Output Peak - to - Average Ratio Compression (PARC)
Broadband Performance @ Pout = 56 Watts Avg.
f, FREQUENCY (MHz)
Figure 4. Output Peak - to - Average Ratio Compression (PARC)
Broadband Performance @ Pout = 87 Watts Avg.
20
IDQ = 2400 mA
Gps, POWER GAIN (dB)
19
2000 mA
18
1600 mA
17
1200 mA
16
800 mA
15
VDD = 28 Vdc, f1 = 1955 MHz, f2 = 1965 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
14
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
0
VDD = 28 Vdc, f1 = 1955 MHz, f2 = 1965 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
−10
−20
1200 mA
−30
IDQ = 800 mA
2400 mA
−40
2000 mA
−50
1600 mA
−60
1
10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
200
1
10
100
200
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF6S19200HR3 MRF6S19200HSR3
6
RF Device Data
Freescale Semiconductor
−10
IMD, INTERMODULATION DISTORTION (dBc)
VDD = 28 Vdc, IDQ = 1600 mA
f1 = 1955 MHz, f2 = 1965 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
−20
−30
−40
3rd Order
−50
5th Order
−60
7th Order
−70
1
10
100
−10
VDD = 28 Vdc, Pout = 130 W (PEP), IDQ = 1600 mA
Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 1960 MHz
−20
−30
IM3−L IM3−U
−40
IM5−U
−50
IM5−L
−60
IM7−L
IM7−U
−70
1
200
10
100
Pout, OUTPUT POWER (WATTS) PEP
TWO−TONE SPACING (MHz)
Figure 7. Intermodulation Distortion Products
versus Output Power
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
OUTPUT COMPRESSION AT THE 0.01%
PROBABILITY ON CCDF (dB)
1
0
45
Ideal
40
−1 Actual
−2
−3
−4
−5
30
35
−1 dB = 43.38 W
30
−2 dB = 62.72 W
ηD
25
−3 dB = 87.05 W
VDD = 28 Vdc, IDQ = 1600 mA, f = 1960 MHz
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability (CCDF)
40
50
60
70
ηD, DRAIN EFFICIENCY (%)
IMD, INTERMODULATION DISTORTION (dBc)
TYPICAL CHARACTERISTICS
20
15
80
90
Pout, OUTPUT POWER (WATTS)
Figure 9. Output Peak - to - Average Ratio
Compression (PARC) versus Output Power
20
18.5
40
−30_C
85_C
25_C
30
20
85_C
17
10
VDD = 28 Vdc
IDQ = 1600 mA
f = 1960 MHz
ηD
16
1
10
100
0
200
Gps, POWER GAIN (dB)
19
18
IDQ = 1600 mA
f = 1960 MHz
25_C
TC = −30_C
ηD, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
Gps
18
28 V
32 V
17.5
VDD = 24 V
17
16.5
0
20
40
60
80
100
120
Pout, OUTPUT POWER (WATTS) CW
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
Figure 11. Power Gain versus Output Power
140
MRF6S19200HR3 MRF6S19200HSR3
RF Device Data
Freescale Semiconductor
7
TYPICAL CHARACTERISTICS
MTTF (HOURS)
108
107
106
105
90
110
130
150
170
190
210
230
250
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 28 Vdc, Pout = 56 W Avg., and ηD = 29.5%.
MTTF calculator available at http:/www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 12. MTTF versus Junction Temperature
W - CDMA TEST SIGNAL
100
−10
3.84 MHz
Channel BW
−20
10
1
−40
Input Signal
−50
0.1
(dB)
PROBABILITY (%)
−30
−60
0.01
−70
W−CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
0.001
0.0001
0
2
4
6
−80
−ACPR in 3.84 MHz
Integrated BW
−90
8
10
−ACPR in 3.84 MHz
Integrated BW
−100
PEAK−TO−AVERAGE (dB)
Figure 13. CCDF W - CDMA 3GPP, Test Model 1,
64 DPCH, 50% Clipping, Single - Carrier Test Signal
−110
−9
−7.2 −5.4 −3.6 −1.8
0
1.8
3.6
5.4
7.2
9
f, FREQUENCY (MHz)
Figure 14. Single - Carrier W - CDMA Spectrum
MRF6S19200HR3 MRF6S19200HSR3
8
RF Device Data
Freescale Semiconductor
Zo = 5 Ω
f = 2040 MHz
Zload
f = 1880 MHz
Zsource
f = 2040 MHz
f = 1880 MHz
VDD = 28 Vdc, IDQ = 1600 mA, Pout = 56 W Avg.
f
MHz
Zsource
W
Zload
W
1880
2.11 - j4.27
1.99 - j0.79
1900
2.05 - j4.11
1.96 - j0.64
1920
1.98 - j3.95
1.92 - j0.49
1940
1.92 - j3.80
1.86 - j0.34
1960
1.82 - j3.63
1.78 - j0.20
1980
1.72 - j3.40
1.74 + j0.01
2000
1.74 - j3.17
1.77 + j0.15
2020
1.71 - j3.02
1.78 + j0.29
2040
1.66 - j2.85
1.75 + j0.42
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 15. Series Equivalent Source and Load Impedance
MRF6S19200HR3 MRF6S19200HSR3
RF Device Data
Freescale Semiconductor
9
PACKAGE DIMENSIONS
B
G
2X
1
Q
bbb
M
T A
M
B
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
3
B
K
2
(FLANGE)
D
bbb
M
T A
B
M
M
M
bbb
N
M
T A
B
M
M
ccc
M
T A
(LID)
B
M
S
(LID)
ccc
H
R
(INSULATOR)
M
T A
B
M
aaa
M
M
T A
M
DIM
A
B
C
D
E
F
G
H
K
M
N
Q
R
S
aaa
bbb
ccc
M
(INSULATOR)
B
M
C
F
E
A
T
A
SEATING
PLANE
INCHES
MIN
MAX
1.335
1.345
0.380
0.390
0.125
0.170
0.495
0.505
0.035
0.045
0.003
0.006
1.100 BSC
0.057
0.067
0.170
0.210
0.774
0.786
0.772
0.788
.118
.138
0.365
0.375
0.365
0.375
0.005 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
33.91
34.16
9.65
9.91
3.18
4.32
12.57
12.83
0.89
1.14
0.08
0.15
27.94 BSC
1.45
1.70
4.32
5.33
19.66
19.96
19.60
20.00
3.00
3.51
9.27
9.53
9.27
9.52
0.127 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
(FLANGE)
CASE 465 - 06
ISSUE G
NI - 780
MRF6S19200HR3
4X U
(FLANGE)
4X Z
(LID)
B
1
K
2X
2
B
(FLANGE)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
D
bbb
M
T A
M
B
M
N
ccc
M
R
(LID)
M
T A
M
B
M
ccc
M
T A
M
M
B
M
aaa
M
T A
M
S
(INSULATOR)
bbb
M
T A
(LID)
B
M
(INSULATOR)
B
M
H
C
3
E
A
A
F
T
SEATING
PLANE
(FLANGE)
CASE 465A - 06
ISSUE H
NI - 780S
MRF6S19200HSR3
DIM
A
B
C
D
E
F
H
K
M
N
R
S
U
Z
aaa
bbb
ccc
INCHES
MIN
MAX
0.805
0.815
0.380
0.390
0.125
0.170
0.495
0.505
0.035
0.045
0.003
0.006
0.057
0.067
0.170
0.210
0.774
0.786
0.772
0.788
0.365
0.375
0.365
0.375
−−− 0.040
−−− 0.030
0.005 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
20.45
20.70
9.65
9.91
3.18
4.32
12.57
12.83
0.89
1.14
0.08
0.15
1.45
1.70
4.32
5.33
19.61
20.02
19.61
20.02
9.27
9.53
9.27
9.52
−−−
1.02
−−−
0.76
0.127 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
5. SOURCE
MRF6S19200HR3 MRF6S19200HSR3
10
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
0
Mar. 2008
Description
• Initial Release of Data Sheet
MRF6S19200HR3 MRF6S19200HSR3
RF Device Data
Freescale Semiconductor
11
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MRF6S19200HR3 MRF6S19200HSR3
Document Number: MRF6S19200H
Rev. 0, 3/2008
12
RF Device Data
Freescale Semiconductor