MS1455 RF & MICROWAVE TRANSISTORS 800 - 900 MHz APPLICATIONS Features • • • • • 836 MHz 12.5 VOLTS POUT = 45 WATTS GP = 4.7 dB MINIMUM COMMON BASE CONFIGURATION DESCRIPTION: The MS1455 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed for amplifier applications in the 806-866 MHz frequency range. Internal impedance matching assures optimum gain and efficiency across the entire frequency band. Gold metalization and emitter ballast resistors assures infinite VSWR capability and long term reliability. ABSOLUTE MAXIMUM MAXIMUM RATINGS (Tcase = 25°°C) Symbol VCBO VEBO VCEO VCES PDISS IC TJ TSTG Parameter Collector-Base Voltage Emitter-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Power Dissipation Device Current Junction Temperature Storage Temperature Value Unit 36 4.0 18 36 150 9.0 200 -65 to +150 V V V V W A °C °C 1.2 °C/W Thermal Data RTH(J-C) Thermal Resistance Junction-case 053-7078 Rev - 10-2002 MS1455 ELECTRICAL SPECIFICATIONS (Tcase = 25° 25°C) STATIC Symbol BVCES BVCEO BVEBO ICBO HFE Test Conditions IC = 50 mA IC = 50 mA IE = 10 mA VCB = 15 V VCE = 5 V VBE = 0 V IB = 0 mA IC = 0 mA IE = 0 mA IC = 1 A Min. Value Typ. Max. Unit 36 18 4.0 --5 ----------- ------5 200 V V V mA --- DYNAMIC Symbol Test Conditions Min. Value Typ. Max. Unit POUT f = 836 MHz PIN = 15W VCE = 12.5V 45 --- --- W GP f = 836 MHz PIN = 15W VCE = 12.5V 4.7 --- --- dB COB f =1 MHz VCB = 12.5 V --- --- 105 pf IMPEDANCE DATA ZIN(Ω) ZCL(Ω) 806 MHz 1.4 – j4.6 1.0 – j1.5 836 MHz 2.0 – j5.2 0.95 – j1.7 866 MHz 2.3 – j5.3 0.75 – j1.7 FREQ PIN = 15W VCE = 12.5V TEST CURCUIT 053-7078 Rev - 10-2002 MS1455 053-7078 Rev - 10-2002 MS1455 PACKAGE MECHANICAL MECHANICAL DATA 053-7078 Rev - 10-2002